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    FSS1 Price and Stock

    Nextgen Components Y32FSS112DML01

    RELAY GEN PURPOSE SPST 5A 12V
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    DigiKey Y32FSS112DML01 Box 50,000 1,000
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    Nextgen Components Y3FSS112DM0L01

    RELAY GEN PURPOSE SPST 10A 12V
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    DigiKey Y3FSS112DM0L01 Box 48,000 1,000
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    onsemi NTMFSS1D5N06CL

    60V T6 DIE IN 5X6 SOURCE DOWN PA
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    DigiKey NTMFSS1D5N06CL Reel 9,000 3,000
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    NTMFSS1D5N06CL Cut Tape 2,928 1
    • 1 $3.16
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    • 100 $2.2071
    • 1000 $1.58671
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    Mouser Electronics NTMFSS1D5N06CL 2,980
    • 1 $3.16
    • 10 $2.74
    • 100 $2.17
    • 1000 $1.59
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    Rochester Electronics NTMFSS1D5N06CL 21,000 1
    • 1 $1.72
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    Richardson RFPD NTMFSS1D5N06CL 3,000
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    EBV Elektronik NTMFSS1D5N06CL 16 Weeks 3,000
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    Flip Electronics NTMFSS1D5N06CL 14,770
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    Rochester Electronics LLC FSS145-TL-E

    FSS145 - P-CHANNEL SILICON MOSFE
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    DigiKey FSS145-TL-E Bulk 3,000 290
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    Honeywell Sensing and Control FSS1500NGT

    SENSOR FORCE SURF MOUNT 3.3LBS
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    DigiKey FSS1500NGT Tube 286 1
    • 1 $100.15
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    Mouser Electronics FSS1500NGT 12
    • 1 $100.15
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    Verical FSS1500NGT 69 1
    • 1 $114.65
    • 10 $110.4
    • 100 $100.85
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    FSS1500NGT 25 1
    • 1 $34.74
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    FSS1500NGT 21 1
    • 1 $129.038
    • 10 $126.386
    • 100 $125.125
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    Arrow Electronics FSS1500NGT 25 2 Weeks 1
    • 1 $34.74
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    RS FSS1500NGT Bulk 14 Weeks 25
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    • 100 $120.18
    • 1000 $106.96
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    TTI FSS1500NGT Bulk 269 1
    • 1 $103.68
    • 10 $103.68
    • 100 $96.81
    • 1000 $96.81
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    Powell Electronics FSS1500NGT 25 1
    • 1 $400.6
    • 10 $400.6
    • 100 $266.39
    • 1000 $238.35
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    IBS Electronics FSS1500NGT 69 1
    • 1 $119.236
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    South Electronics FSS1500NGT
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    Find more FSS1 price and stock on Findchips.com

    FSS1 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSS100-008A IXYS 80V dual power schottky diode Original PDF
    FSS101 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    FSS101 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FSS101 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    FSS102 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    FSS104 Sanyo Semiconductor P-Channel Silicon MOSFET DC/DC Converter Original PDF
    FSS104 Sanyo Semiconductor DC-DC converter Original PDF
    FSS106 Sanyo Semiconductor DC-DC converter Original PDF
    FSS107 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    FSS107 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    FSS108 Sanyo Semiconductor DC-DC converter Original PDF
    FSS-10-D-C-2-ST2 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-C-2-ST3 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-C-2-ST4 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-C-2-ST8 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-C-6-ST2 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-C-6-ST8 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-G-2-ST2 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS-10-D-G-2-ST3 Samtec Connector: Wire to Board Connector: SKT: 10: 1.27: THRU Original PDF
    FSS1-101DC12V Greenwich Electronics SOLID STATE RELAY Original PDF

    FSS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TENTATIVE DATA SHEET FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		PDF FSS12W. FSS120W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W OD123W.

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7399 FSS130R4

    MOSFET MARK H1

    Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines


    Original     		PDF JANSR2N7399 FSS130R4 R2N73 MOSFET MARK H1 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSS12L.FSS115L 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 150 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability


    Original     		PDF FSS12L. FSS115L DO-219AA 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 Oct-11

    marking s104

    Abstract: s104 diode S104 FSS104
    Text: Ordering number:ENN5991A P-Channel Silicon MOSFET FSS104 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS104] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source


    Original     		PDF ENN5991A FSS104 FSS104] marking s104 s104 diode S104 FSS104

    Untitled

    Abstract: No abstract text available
    Text: FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop


    Original     		PDF FSS12W. FSS120W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W OD123W.

    schottky diode 100A

    Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
    Text: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32


    Original     		PDF FSS12 FSS13 FSS14 FSS15* FSS16* DO214-AC FSS22 FSS23 FSS24 FSS25* schottky diode 100A DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214

    IT10765

    Abstract: FSS162 IT10767
    Text: FSS162 Ordering number : ENA0348 SANYO Semiconductors DATA SHEET FSS162 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		PDF FSS162 ENA0348 1200mm2 PW10s PW10s) A0348-4/4 IT10765 FSS162 IT10767

    FSS172

    Abstract: S172
    Text: FSS172 Ordering number : EN8286A SANYO Semiconductors DATA SHEET FSS172 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF FSS172 EN8286A 1200mm20 FSS172 S172

    is s106 diode

    Abstract: FSS106 S106
    Text: Ordering number:ENN6476 P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS106] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN6476 FSS106 FSS106] is s106 diode FSS106 S106

    FSS14L

    Abstract: fss16
    Text: FSS12L.FSS115L 1.0 Amp. Surface Mounted Glass Passivated Schottky Barrier Rectifier Dimensions in mm. Voltage 20 to 150 V CASE: M1F DO219AA Current 1.0 A R • For surface mounted application • Low profile package • Ideal for automated pick & place


    Original     		PDF FSS12L. FSS115L DO219AA) RS-481 50mVp-p FSS14L fss16

    SOD123W PACKAGE

    Abstract: fss14w
    Text: TENTATIVE DATA SHEET FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		PDF FSS12W. FSS120W OD123W AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, OD123W. MIL-STD-750 J-STD-002 SOD123W PACKAGE fss14w

    FSS14

    Abstract: No abstract text available
    Text: FSS12L.FSS115L 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 150 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability


    Original     		PDF FSS12L. FSS115L DO-219AA AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 Oct-11 FSS14

    2E12

    Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
    Text: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		PDF FSS13A0D, FSS13A0R 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1

    2E12

    Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
    Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSS130D, FSS130R 2E12 FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET

    FSS108

    Abstract: S108 TA7560
    Text: Ordering number:ENN5935A P-Channel Silicon MOSFET FSS108 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS108] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN5935A FSS108 FSS108] FSS108 S108 TA7560

    FSS174

    Abstract: S174
    Text: FSS174 注文コード No. N 8 7 3 8 三洋半導体データシート N FSS174 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original     		PDF FSS174 1200mm2 --10V IT09970 --24A 1200mm2 IT09972 IT09973 FSS174 S174

    A03414

    Abstract: A0341 A03413 FSS145 A0341-3
    Text: FSS145 注文コード No. N A 0 3 4 1 三洋半導体データシート N FSS145 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ロードスイッチ用。 ・低オン抵抗。 ・4V 駆動。


    Original     		PDF FSS145 1200mm2 IT10752 --32A 1200mm2 IT10754 IT10755 A0341-3/4 A03414 A0341 A03413 FSS145 A0341-3

    marking S132

    Abstract: FSS132 S132 TA2720
    Text: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN6398 FSS132 FSS132] marking S132 FSS132 S132 TA2720

    transistors ai 585

    Abstract: No abstract text available
    Text: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS130D, FSS130R O-257AA MIL-S-19500 transistors ai 585

    Untitled

    Abstract: No abstract text available
    Text: j Ordering number : ENN7019 P-Channel Silicon MOSFET FSS139 IS A ß ro i Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. u n it: mm 2116 [FSS139] MM □ □ 1 □ 1 : Source 2 : Source


    OCR Scan     		PDF ENN7019 FSS139 FSS139]

    Untitled

    Abstract: No abstract text available
    Text: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSS130D, FSS130R O-257AA 1-800-4-HARRIS

    4431 mosfet

    Abstract: No abstract text available
    Text: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS130R4 JANSR2N7399 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 4431 mosfet

    fss130

    Abstract: No abstract text available
    Text: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF e1997 FSS130D, FSS130R O-257AA 36MeV/mg/cm2 1-800-4-HARRIS fss130