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    FSF9150D1 Search Results

    FSF9150D1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSF9150D1 Fairchild Semiconductor 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150D1 Intersil 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSF9150D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSF9150R1

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSF9150D, FSF9150R -100V, FSF9150R1

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1

    Untitled

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF9150D, FSF9150R -100V, riTO-254AA MIL-S-19500

    7n51

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r


    OCR Scan
    PDF FSF9150D, FSF9150R -100V, MIL-STD-750, MtL-S-19500, 100ms; 500ms; 7n51