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Text: 2SA1848 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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2SA1848
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Text: NPC173 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A)25m Absolute Max. Power Diss. (W)230m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01u @V(CBO) (V) (Test Condition)
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NPC173
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Text: 2N387 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)1.0
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2N387
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StyleTO-27
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Text: MP2060 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)125# I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MP2060
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Untitled
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Text: SDM4012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.
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SDM4012
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Text: SDM4011 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.
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SDM4011
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mp2060-2
Abstract: No abstract text available
Text: MP2060-2 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)25 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2060-2
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Untitled
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Text: NPC188 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50ã V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175’ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition)
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NPC188
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Text: SDM4010 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.
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SDM4010
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Untitled
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Text: CMPT918 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)15
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CMPT918
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Text: 2SC2840D Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition)
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2SC2840D
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Text: GFT34 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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GFT34
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Text: 2SC2840E Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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2SC2840E
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LGA 2011 LGA 1150
Abstract: MARKING code VO SMD fet
Text: Highly Integrated 35A Single-input Voltage, Synchronous Buck Regulator FEATURES iP1837 DESCRIPTION • Wide input application 1.5V―16V Single 3.3V or single 5V application Output Voltage Range: 0.6V to 0.75*Vin
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iP1837
5V16V
125oC
LGA 2011 LGA 1150
MARKING code VO SMD fet
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Untitled
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Text: MP2060-4 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)25 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2060-4
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Untitled
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Text: MP2062-7 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2062-7
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Untitled
Abstract: No abstract text available
Text: MP2063-2 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2063-2
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Untitled
Abstract: No abstract text available
Text: BSS64R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition)
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Untitled
Abstract: No abstract text available
Text: MP2061-7 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)35 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2061-7
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Untitled
Abstract: No abstract text available
Text: BFS46 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)550m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)
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Untitled
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Text: SE5001 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A).50uØ @V(CBO) (V) (Test Condition)
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SE5001
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Text: SE5003 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A).50uØ @V(CBO) (V) (Test Condition)
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SE5003
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Untitled
Abstract: No abstract text available
Text: MP2061-4 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)35 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MP2061-4
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Untitled
Abstract: No abstract text available
Text: MP2062-2 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)7.0 P(D) Max. (W)85 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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