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    2N387 Price and Stock

    Microchip Technology Inc 2N3879

    TRANS NPN 75V 7A TO66
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    Microchip Technology Inc 2N3872

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    Microchip Technology Inc 2N3878

    TRANS NPN 50V 7A TO66
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    Microchip Technology Inc 2N3879A

    TRANS NPN 75V 7A TO66
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    Microchip Technology Inc JAN2N3879

    TRANS NPN 75V 7A TO66
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    2N387 Datasheets (229)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N387 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N387 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N387 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N387 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N387 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N387 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N387 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N387 Unknown GE Transistor Specifications Scan PDF
    2N3870 Motorola Thyristors Silicon Controlled Rectifiers Original PDF
    2N3870 Advanced Semiconductor TRIAC,400V V(DRM),3A I(T)RMS,TO-220 Scan PDF
    2N3870 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N3870 General Electric 35A silicon controlled rectifier. Vrsom(non-rep) 150V. Scan PDF
    2N3870 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3870 Motorola Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Scan PDF
    2N3870 Motorola Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) Scan PDF
    2N3870 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3870 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3870 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3870 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3870 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    ...

    2N387 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N3870-2N3873 2N3896-2N3899 2N6171-2N6174 SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR 35 AMPS RMS, 100-800 VOLTS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		2N3870-2N3873 2N3896-2N3899 2N6171-2N6174 MIL-PRF-19500, 2N3870, 2N3896, 2N6171 2N3871, 2N3897, 2N6172 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3876 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m÷ @V(CBO) (V) (Test Condition)139 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


    Original     		2N3876 Freq50M PDF

    2N3879

    Abstract: MIL-PRF-19500/526 2N3879 JANTXV
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices Qualified Level 2N3879 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation


    Original     		MIL-PRF-19500/526 2N3879 O-213AA) 2N3879 MIL-PRF-19500/526 2N3879 JANTXV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N387 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)1.0


    Original     		2N387 Freq600k StyleTO-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3879+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0


    Original     		2N3879 Freq40M time400n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3879+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0


    Original     		2N3879 Freq40M time400n PDF

    2N3492

    Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
    Text: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0


    Original     		2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 PDF

    2N3879

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Wide area of safe operation ·High sustaining voltage · APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING See Fig.2


    Original     		2N3879 2N3879 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 • High Power • Hermetic TO-66 Metal Package • Ideally suited for High Current, High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		2N3879 O-213AA) PDF

    2n3879

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 • High Power • Hermetic TO-66 Metal Package • Ideally suited for High Current, High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		2N3879 O-213AA) 2n3879 PDF

    typ1012

    Abstract: M6697 S1015L aeg t15 BC141-10 aeg
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 SIPSll0 SPSll0 10RIF10W 10RIF10Wl0 10RIF10W15 10RIF10W20 S4060A NCF100D 2N1844 2N1844A ~t-1Ut:ll;i 15 20 25 30 SF10B41 SF10B41 2N3870 2N3896 2N6171 2N6171 2N6171 16RIA10 TIC126A 1Il;126A


    Original     		10RIF10W 10RIF10Wl0 10RIF10W15 10RIF10W20 S4060A NCF100D 2N1844 2N1844A 220AB typ1012 M6697 S1015L aeg t15 BC141-10 aeg PDF

    TO-213AA

    Abstract: 2N3879 2N3879 JANTX TO213AA
    Text: 2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590)


    Original     		2N3879 T0-66 O-213AA) TO-213AA 2N3879 2N3879 JANTX TO213AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3879+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0


    Original     		2N3879 Freq40M time400n PDF

    RCA1A19

    Abstract: rca 40362 40362 RCA 40319 40391 RCA RCA1A08 2n4314 RCA1A02 2N6496 RCA rca 2N4314
    Text: High-Speed-Switching n-p-n and p-n-p Type Selection Charts cont'd "FE v C E O (sus) V C E X V (sus) V 'C mA V V (sat)-V •CEO-MA CE V CE Temp.—°C ^CE 'c 25 V mA 2N3879 FAMILY (n-p-n) High Cu f = 60MHzmin;P = 35W T 0-213MA Package T 85* 75* 65+ 90* 110*


    Original     		2N3879 60MHzmin 0-213MA 2N3878 2N5202 2N3879* 2N6500 205MD 2N2102 2N4037 RCA1A19 rca 40362 40362 RCA 40319 40391 RCA RCA1A08 2n4314 RCA1A02 2N6496 RCA rca 2N4314 PDF

    k 3878

    Abstract: 2N3879 2N650A 2n5202 2N3879A
    Text: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s


    OCR Scan     		2N3878, 2N3879, 2N5202, 2N6500 4302E71 k 3878 2N3879 2N650A 2n5202 2N3879A PDF

    2N1724A

    Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
    Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


    OCR Scan     		2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N1724A TO61 2N3442 2N1724 2N1725 2N3773 2N3446 PDF

    2N6881

    Abstract: CA37P GE C228 C137PB 2N682 2N683 C35F C35U C38F C38U
    Text: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS


    OCR Scan     		c230-2 c231-3 c228-9 2n3870-3 2n5204-7 2N6881 C230/2D C231/3D 2N3872 2N3898 CA37P GE C228 C137PB 2N682 2N683 C35F C35U C38F C38U PDF

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan     		A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907 PDF

    2n3878

    Abstract: TA7285 2N3879 2N5202
    Text: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n


    OCR Scan     		2N3878, 2N3879, 2N5202 2N3879 2N5202* 2N3878 2N5202 2N5202. TA7285 PDF

    ta8932

    Abstract: 2N3879 TA7285 P602I 2N5202 2N3878 2N6500 2N3679 RCA Solid State Power Transistor PT3535
    Text: "üï »F|3fl7SGfll D0171QS 7 01E 17105 171Q_ _01E D High-Speed Power l 1u ° u 7^_ L— 3875081 G E SOLID STATE 2N3878, 2N3879, 2N5202, 2N6500 File N u m b e r


    OCR Scan     		D017105 2N3878, 2N3879, 2N5202, 2N6500 171nc; 2N6500 RCA-2N3878, ta8932 2N3879 TA7285 P602I 2N5202 2N3878 2N3679 RCA Solid State Power Transistor PT3535 PDF

    transistors 1U

    Abstract: 2N3879 2N3878
    Text: 01 » E ^ 3 f l ? S D a i 0017105 " 0 1 E 171Q5 _ 0 1E 1 7 11u0 5 High-Speed Power Transistors-— D 3875081 G E SOLID 7 STATE 2N3878, 2N3879, 2N5202, 2N6500 D u Tz. L — U File Number


    OCR Scan     		171Q5 2N3878, 2N3879, 2N5202, 2N6500 CA-2N3878, transistors 1U 2N3879 2N3878 PDF

    2N3899

    Abstract: 2N3896 2N6173 2N3872 2N3898 2N3870 2N3871 2N3873 2N3897 2N6171
    Text: MOTOROLA SC -CDIODE S/ OP TO ï 6367255 MOTOROLA SC 01 Ï F tiBbVaSS <DI O D E S /O P T O ) 0 1E 7 8 9 4 6 OOTfiTHb 1 DT ~ 2 * r - /7 2N3870 S ilic o n C o n tr o lle d R e c tifie rs thru 2N3873 2N3896 R e v e rse B lo c k in g T rio d e T h y ris to rs


    OCR Scan     		PDF

    2N3919c

    Abstract: 2N3445
    Text: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft


    OCR Scan     		2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 O111/1 2N3919c 2N3445 PDF

    2n3879

    Abstract: 2n5202 101075A 2N3679 P602I TA7285 rdf1
    Text: File Number 766.1 2N3878, 2N3879, 2N5202 HARRIS S E m C O N D SECTOR ShE D M302E71 QQMDMMl 147 • HAS ■ High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ M axim um -area-of-operatlon curves fo r d c and pulse operation


    OCR Scan     		2N3878, 2N3879, 2N5202 M302E71 2NS202 2N3878 2N3879 2N5202* 2N3B78 2n5202 101075A 2N3679 P602I TA7285 rdf1 PDF