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Text: GFT34 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: GFT3408/60 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: GFT3408/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: GFT34/30 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: GFT3408/80 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: GFT34/15 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)300m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: GFT34/60 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: GFT3408/40 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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2N1103
Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2N1103
2SC5220
2SA479
AC122-30
OC75N
2SC167
2SC166
2N2161
AF185
SFT155
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor FB 260N
Abstract: AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
transistor FB 260N
AC122
AC122-30
2SA479
2SA208
GT123
2N384
AF185
SFT155
XA131
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AC122-30
Abstract: AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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B170024
4000n
AC122-30
AF185
2N625
2SA479
2N3074
2SA301
SFT155
XA131
3SJ11
2sb48
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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AC122-30
Abstract: 2N2022 2SA479 2N1646 2sa171 2SA301 AF185 SFT155 XA131 usaf521es071m
Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol
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USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
AC122-30
2N2022
2SA479
2N1646
2sa171
2SA301
AF185
SFT155
XA131
usaf521es071m
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af137
Abstract: 2SB165 T0116 AC122-30 ASY32 GERMANIUM PNP LOW POWER TRANSISTORS 987T1 988T1 989T1 2SA24
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others.
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2N781t
2N1646
2N1853/18
2N1960t
2N1960/46T
2N1961t
200rn
1961/46t
2N2022
af137
2SB165
T0116
AC122-30
ASY32
GERMANIUM PNP LOW POWER TRANSISTORS
987T1
988T1
989T1
2SA24
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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