32.768khz crystal 2 pin
Abstract: programming MSC1202
Text: MSC1202 MS C12 02 SBAS328 – JULY 2004 FEATURES ANALOG FEATURES ● 16 BITS NO MISSING CODES ● 16 BITS EFFECTIVE RESOLUTION UP TO 200Hz Low Noise: 600nV at 10Hz ● PGA FROM 1 TO 128 ● PRECISION ON-CHIP VOLTAGE REFERENCE ● 6 DIFFERENTIAL/SINGLE-ENDED CHANNELS
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MSC1202
SBAS328
200Hz
600nV
02ppm/
8051-COMPATIBLE
33MHz
32kHz
32.768khz crystal 2 pin
programming MSC1202
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Text: 2N2853-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0
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Text: PG1382 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)10
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2N3025
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Text: 2N3025 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)3.0
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Text: SDT4944 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275 V(BR)CBO (V)300 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1711-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1717-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1711-1402 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)150 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: CEN-U10 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20m
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Text: 2N2852-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0
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Text: 2SD1977 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC3284 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)14 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BF723 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250ã V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: UPT835 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N3666 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: AP1057 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: MPQ3799 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)2.0 Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n
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Text: 2SA1848 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: B148002 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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B148002
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Text: 2N2849-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0
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Text: PG1387 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0
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Text: 2SA1077 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SDT4941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)225 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: PG2389 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0
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