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    Untitled

    Abstract: No abstract text available
    Text: PG2389 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0


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    PDF PG2389 Freq60MÃ

    2n4070

    Abstract: pg2380
    Text: r-> NPN Type l ’ÏÎ ' -Hi • Linear hFE from 50 mfl to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVCeoi.u>>to 100 volts V ' ïéj • æ z z r ^ T ’ rrr rs ? • a' - :


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    PDF Final100% 2n4070 pg2380

    Untitled

    Abstract: No abstract text available
    Text: T3 D E I □ 0 4 3 S c12 se i □□□□□14 7 -3 3 - 0 1 '• *' 3 > 'i * k t t ì l S X 10 AMP 100 VOLT 65 WATT 60 MHz TO-3 • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical


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    PDF 2N4070 PG1380 PG2394 PG1395 PG2395