Untitled
Abstract: No abstract text available
Text: A1A210A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.5m Peak Curr. Tol. Total Cap. (F)1.1p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq10M Series Induct. (H)300p R(series) (Ohms)5.0 Neg Resist.70 Semiconductor MaterialGaAs
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A1A210A
Freq10M
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40395
Abstract: No abstract text available
Text: 40395 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18ã V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Freq10M
40395
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Untitled
Abstract: No abstract text available
Text: STX5/3025 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140 I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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STX5/3025
Freq10MÂ
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Untitled
Abstract: No abstract text available
Text: 2N2880JAN Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N2880JAN
Freq10M
eq10M
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Untitled
Abstract: No abstract text available
Text: SPT6503 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800ã V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SPT6503
Freq10M
time700n
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Untitled
Abstract: No abstract text available
Text: 2SC3589 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)250 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3589
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2SC4140 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)18 Absolute Max. Power Diss. (W)130 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC4140
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2SC1986 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1986
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2N6323 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30
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2N6323
Freq10M
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Untitled
Abstract: No abstract text available
Text: SDT14415 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300è V(BR)CBO (V)400 I(C) Max. (A)15 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT14415
Freq10M
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Untitled
Abstract: No abstract text available
Text: SDT3723 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)28 Maximum Operating Temp (øC) I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3723
Freq10M
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Untitled
Abstract: No abstract text available
Text: ST28142 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175 I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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ST28142
Freq10M
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Untitled
Abstract: No abstract text available
Text: SDT55505 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)225 I(C) Max. (A)75 Absolute Max. Power Diss. (W)385 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT55505
Freq10M
time400n
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Untitled
Abstract: No abstract text available
Text: 2SD1905 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD1905
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2SC3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m
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2SC3738
Freq10MÃ
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Untitled
Abstract: No abstract text available
Text: 2N5740 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)10
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2N5740
Freq10M
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Untitled
Abstract: No abstract text available
Text: NSD36C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NSD36C
Freq10M
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Untitled
Abstract: No abstract text available
Text: MJE3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MJE3738
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2SC1786 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)230è V(BR)CBO (V)230 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1786
Freq10M
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Untitled
Abstract: No abstract text available
Text: SML3775 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SML3775
Freq10M
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Untitled
Abstract: No abstract text available
Text: SDT14413 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250è V(BR)CBO (V)350 I(C) Max. (A)15 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT14413
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2SB1135 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SB1135
Freq10M
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Untitled
Abstract: No abstract text available
Text: 2N6106 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)7.0
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2N6106
Freq10M
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Untitled
Abstract: No abstract text available
Text: SDT3803 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3803
Freq10M
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