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    2N6106 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6106 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan PDF
    2N6106 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. Scan PDF
    2N6106 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6106 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6106 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6106 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6106 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6106 Unknown Transistor Replacements Scan PDF
    2N6106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6106 Unknown Cross Reference Datasheet Scan PDF
    2N6106 Unknown Transistor Replacements Scan PDF
    2N6106 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6106 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6106 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N6106 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6106 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6106 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N6106 RCA Solid State Power Transistor Directory 1976 Scan PDF

    2N6106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6106

    Abstract: 2N6110 BE-1 2N6108 2N6106 application
    Text: Inchange Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・With short pin APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2N6106 2N6108 2N6110 O-220 O-220) 2N6106 2N6108 2N6110 BE-1 2N6106 application

    Untitled

    Abstract: No abstract text available
    Text: 2N6106 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)7.0


    Original     		PDF 2N6106 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: IEIIS.Uu £e,mi-(2onau.eko^ ^Products., Line. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N61062N61082N6110 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package •With short pin


    Original     		PDF 2N61062N61082N6110 O-220 O-220) 2N6106 2N6108 2N6110

    2N6106

    Abstract: 2N6110 2N6108
    Text: SavantIC Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2N6106 2N6108 2N6110 O-220 O-220) 2N6106 2N6108 2N6110

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2N3055 TO-220

    Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
    Text: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494


    OCR Scan     		PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N3055 TO-220 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C BFT19B 2N5495

    rca 17417

    Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
    Text: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon


    OCR Scan     		PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* rca 17417 TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743

    2N6181

    Abstract: 2N3055 2n3055 complement 40852 2N3054 2N5293 2N5294 2N5495 2N5783 2N5786
    Text: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N5783 2N3054 2N5955 2N5495 2N5494


    OCR Scan     		PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N6181 2N3055 2n3055 complement 40852 2N5495

    2N8107

    Abstract: rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA
    Text: ÏÏÏ 387 5081 G E SOLID STATE DE |3fl7SQfll DD1741S D " 01E 17415 t T y T .3 Y Z // Power Transistors - File Num ber 676 r - 3 6 - i ? 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476


    OCR Scan     		PDF DD1741S 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* 2N8107 rca 17417 TA8232 2N6109 equivalent 2N6476 2N6474 equivalent transistors 2N6473 2N6476 rca DG17417 2N6111 RCA

    TA7741

    Abstract: 2N6106-2N6111 2N6476
    Text: File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 HARRIS SEMICOND SECTOR SbE D 43D2571 DÜ4DS03 21M • H A S TERMINAL DESIGNATIONS, 7 = 3 3 - < 2 / Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for


    OCR Scan     		PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 43D2571 4DS03 O-220AB 2N64732N6476 TA7741 2N6106-2N6111 2N6476

    TA8723

    Abstract: TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742
    Text: 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS o G en eral-P u rp o se M e d iu m -P o w e r Typ es for Sw itchin g and A m p lifie r A p plications : t Features: • Low saturation voltages


    OCR Scan     		PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 92C3-22540 TA8723 TLE 6289 647s TA8210 TA7783 TA7741 TA8232 h ta7782 TA7742

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327

    2N6103

    Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6103 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111

    RCA 40874

    Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
    Text: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40874 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322

    BD278

    Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
    Text: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2


    OCR Scan     		PDF 2N6033 2N6032 2N6079 2N6103 f2N6111 T0-220AB 2N6108 O-220AA 2N6109 BD278 TO-220-AA 2N6102 2N6098 2N6099

    2N5415

    Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 2N5415 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079

    2N6178

    Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322

    2N3055 RCA

    Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 2N3055 RCA rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439

    2N6491 SWITCH

    Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6491 SWITCH 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


    OCR Scan     		PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125