TRANSISTOR SMD MARKING CODE BS t
Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 SC74 marking 345 BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
Text: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.
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BCM847BV;
BCM847BS;
BCM847DS
BCM847BV
OT666
BCM857BV
BC847BV
BCM847BS
OT363
SC-88
TRANSISTOR SMD MARKING CODE BS t
TRANSISTOR SMD CODE PACKAGE SOT363
SC74 marking 345
BC847BS
BC847BV
BCM847BS
BCM847BV
BCM847DS
BCM857BS
BCM857BV
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TRANSISTOR SMD MARKING CODE BS t
Abstract: BCM857 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV BCM857DS
Text: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.
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BCM857BV;
BCM857BS;
BCM857DS
BCM857BV
OT666
BCM847BV
BC857BV
BCM857BS
OT363
SC-88
TRANSISTOR SMD MARKING CODE BS t
BCM857
BC857BS
BC857BV
BCM847BS
BCM847BV
BCM847DS
BCM857BS
BCM857BV
BCM857DS
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TRANSISTOR SMD MARKING CODE BS t
Abstract: smd marking code bs transistor marking A9 R8 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
Text: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.
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BCM857BV;
BCM857BS;
BCM857DS
BCM857BV
OT666
BCM847BV
BC857BV
BCM857BS
OT363
SC-88
TRANSISTOR SMD MARKING CODE BS t
smd marking code bs
transistor marking A9 R8
BC857BS
BC857BV
BCM847BS
BCM847BV
BCM847DS
BCM857BS
BCM857BV
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TRANSISTOR SMD MARKING CODE BS t
Abstract: SC74 marking 345 TRANSISTOR SMD MARKING CODE BS smd marking code bs BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS
Text: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.
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Original
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BCM847BV;
BCM847BS;
BCM847DS
BCM847BV
OT666
BCM857BV
BC847BV
BCM847BS
OT363
SC-88
TRANSISTOR SMD MARKING CODE BS t
SC74 marking 345
TRANSISTOR SMD MARKING CODE BS
smd marking code bs
BC847BS
BC847BV
BCM847BS
BCM847BV
BCM847DS
BCM857BS
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U106BS
Abstract: 44e sensor u106 U106B triac control circuit with pulse transformer 106BS
Text: 44E » "’T • flTSQOTti Q01Q34S 7 ■ A L 6 G U 106BS TELEFUNKEN ELECTRO NIC ZERO VOLTAGE SWITCH Triac Control for Industrial Purpose in Static Switch, Burst Firing, Proportional Driver, Power Timer etc. : "T "7 Technology: BipoFar Features: • Supply voltage monitoring
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Q01Q34S
106BS
T-65-09
U106BS
44e sensor
u106
U106B
triac control circuit with pulse transformer
106BS
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BF991
Abstract: dual-gate
Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF991
BF991
dual-gate
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Untitled
Abstract: No abstract text available
Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF991
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melcher S-1000
Abstract: Melcher LK 2320-7R
Text: S-Family DC-DC Converters <100 W 100 W DC-DC AC-DC Converters Rugged Environment S-Family Input to output isolation Single output: AS.LS 1000 Double output: AS.LS 2000 • Extremely wide input voltage range • Input over- and undervoltage lock-out • Efficient input filter and built-in surge and transient
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27ssories:
melcher S-1000
Melcher LK 2320-7R
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"MARKING CODE MK"
Abstract: BF1211 BF1211R BF1211WR dual-gate tuner TELEVISION PINNING
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1211;
BF1211R;
BF1211WR
SCA75
R77/01/pp15
"MARKING CODE MK"
BF1211
BF1211R
BF1211WR
dual-gate
tuner TELEVISION PINNING
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BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
SCA75
R77/02/pp15
BF1212R datasheet
BF121
BF1212
BF1212R
BF1212WR
dual-gate
marking CODE ML
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BSV81
Abstract: rce3 VBD30
Text: BSV81 J V _ N-CHANNEL IG-MOS-FET Sym m etrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits,
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BSV81
0035T2D
BSV81
rce3
VBD30
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APL5332
Abstract: PCT resistor 1.5k A102 APM2300A marking 303w
Text: APL5332 0.8V Reference LDO with Source-Sink & Output Selection Functions Features General Description • LDO with Source and Sink Capabilities • Single Input Voltage The APL5332 is a precise CMOS LDO with source sink and output selection functions. The APL5332 offers 2%
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APL5332
APL5332
PCT resistor 1.5k
A102
APM2300A
marking 303w
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heat sensor with fan cooling using 741 op amp
Abstract: melcher S-1000 melcher ls 2320 -7r diode ux
Text: S-Family DC-DC Converters <100 W 100 W DC-DC AC-DC Converters Rugged Environment S-Family Input to output isolation Single output: A S.LS 1000 Double output: A S.LS 2000 • Extremely wide input voltage range • Input over- and undervoltage lock-out
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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bbS3T31
QDE473T
BF991
OT143
OT103
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MG200M1UK1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . The Collector is IsoLated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=200A’ . Low Saturation Voltage
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MG200M1UK1
MG200M1UK1
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BF996
Abstract: marking BS marking BS mosfet
Text: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate
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0D13D14
BF996
200MHz
BF996
marking BS
marking BS mosfet
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marking code 11G1
Abstract: No abstract text available
Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.
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0DE4750
BF996S
OT143
marking code 11G1
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BF1201WR
Abstract: BF1201 BF1201R Bp SOT343R dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs
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BF1201;
BF1201R;
BF1201WR
MSB035
BF1201R
603504/02/pp16
BF1201WR
BF1201
Bp SOT343R
dual-gate
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free transistor bs 200
Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.
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711008b
BF991
OT143
OT103
free transistor bs 200
marking BS mosfet
FET MARKING CODE
BF991
G2S-50
transistor BF991
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"MARKING CODE LE"
Abstract: BF1202R BF1202WR BF1202 PHILIPS LDP 0805 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs
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BF1202;
BF1202R;
BF1202WR
MSB035
BF1202R
603504/02/pp16
"MARKING CODE LE"
BF1202WR
BF1202
PHILIPS LDP 0805
dual-gate
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS
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BUT34/D
BUT34
BUT34
97A-05
O-204AE
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LM391N 90
Abstract: texas instruments tip41 Vbe multiplier LM391N-100 W47B LM391N equivalent lm391n amplifier IC LM391 schematic diagram 800 watt power amplifier free d LM391
Text: LM391 LM391 Audio Power Driver Literature Number: SNVS753A LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity
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LM391
LM391
SNVS753A
LM391N 90
texas instruments tip41
Vbe multiplier
LM391N-100
W47B
LM391N equivalent
lm391n amplifier
IC LM391
schematic diagram 800 watt power amplifier free d
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TC701
Abstract: transistor RJH 30 nokia production line ausi die attach
Text: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004
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FIN-00045,
TC701
transistor RJH 30
nokia production line
ausi die attach
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Untitled
Abstract: No abstract text available
Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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711002b
BF994S
OT143
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