BF1202 |
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NXP Semiconductors
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BF1202 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
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BF1202 |
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Philips Semiconductors
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N-Channel Dual-Gate PoLo MOS-FET |
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BF120-20-A-0-N-D |
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GCT Semiconductor
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20W, 2MM SOCKET, DIL, SMT, VERT, |
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Original |
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BF1202,215 |
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NXP Semiconductors
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BF1202 - N-channel dual-gate PoLo MOS-FETs, SOT143B Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
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BF1202,215 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
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BF120-22-A-0-N-D |
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GCT Semiconductor
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22W, 2MM SOCKET, DIL, SMT, VERT, |
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Original |
PDF
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BF120-24-A-0-N-D |
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GCT Semiconductor
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24W, 2MM SOCKET, DIL, SMT, VERT, |
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Original |
PDF
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BF120-26-A-0-N-D |
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GCT Semiconductor
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26W, 2MM SOCKET, DIL, SMT, VERT, |
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Original |
PDF
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BF120-28-A-0-N-D |
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GCT Semiconductor
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28W, 2MM SOCKET, DIL, SMT, VERT, |
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Original |
PDF
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BF1202/L,215 |
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NXP Semiconductors
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BF1202/L - N-channel dual-gate PoLo MOS-FETs, SOT143B Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
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BF1202R |
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NXP Semiconductors
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BF1202 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-61AA, 4 PIN, FET RF Small Signal |
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Original |
PDF
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BF1202R |
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Philips Semiconductors
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N-Channel Dual-Gate PoLo MOS-FET |
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Original |
PDF
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BF1202R,215 |
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NXP Semiconductors
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BF1202R - N-channel dual-gate PoLo MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
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Original |
PDF
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BF1202R,215 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 25 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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BF1202WR |
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NXP Semiconductors
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BF1202WR - N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 25 mS |
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PDF
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BF1202WR |
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Philips Semiconductors
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N-Channel Dual-Gate PoLo MOS-FET |
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Original |
PDF
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BF1202WR,115 |
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NXP Semiconductors
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BF1202 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
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Original |
PDF
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BF1202WR,115 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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BF1202WR,135 |
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NXP Semiconductors
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BF1202WR - N-channel dual-gate PoLo MOS-FETs, SOT343R Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
PDF
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BF1202WR,135 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
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