FR 306 Diode
Abstract: 5SDF0103Z0400 TC 306 S
Text: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 10 kHz Key Parameters
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Original
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0103Z0400
1768/138a,
DS/306/12b
Jun-12
Jun-12
FR 306 Diode
5SDF0103Z0400
TC 306 S
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PDF
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FR 306 Diode
Abstract: No abstract text available
Text: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 10 kHz Key Parameters
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Original
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0103Z0400
1768/138a,
DS/306/12b
Jun-12
Jun-12
FR 306 Diode
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. FR301 thru FR307 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory * * * * * * * * Reverse Voltage 50 to 1000V Forward Current 3.0A Flammability Classification 94V-0 High temperature metallurgically bonded construction
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Original
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FR301
FR307
MIL-S-19500
DO-201AD,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
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PDF
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fr diodes
Abstract: No abstract text available
Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0 B A A C D Mechanical Data · · · · · DO-201AD
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Original
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FR301
FR307
DO-201AD,
MIL-STD-202
DO-201AD
FR304
FR305
DS26003
fr diodes
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PDF
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0135Z0400
Abstract: diode fr 207
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2 kHz Key Parameters = 400 V RRM
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Original
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0135Z0400
1768/138a,
DS/207/06b
Mar-13
0135Z04n
Mar-13
0135Z0400
diode fr 207
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PDF
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92Z0400
Abstract: No abstract text available
Text: 5SDD 92Z0400 5SDD 92Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 9 244 I FAVm
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Original
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92Z0400
92Z0400
92Z0200
1768/138a,
DS/208/06a
Mar-11
Mar-11
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PDF
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FR301
Abstract: FR304 FR307 PR3001G PR3007G DS26003
Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, PLEASE USE PR3001G - PR3007G Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0
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Original
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FR301
FR307
PR3001G
PR3007G
DO-201AD
DO-201AD,
MIL-STD-202
temperatur04
FR305
FR304
FR307
PR3007G
DS26003
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PDF
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diode fr 207
Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526
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Original
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0135Z0400
0135Z0400
0135Z0200
1768/138a,
DS/207/06a
Mar-11
Mar-11
diode fr 207
5SDD0135Z0400
5sdd0135z0200
0135Z0200
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PDF
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5SDF 08F4505
Abstract: abb S 08f45
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807
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Original
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08F4505
1768/138a,
DM/201/06a
Aug-11
08F450A
Aug-11
5SDF 08F4505
abb S
08f45
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PDF
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5SDF08F4505
Abstract: PULSE16
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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Original
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08F4505
08F4505
08F4005
1768/138a,
DM/201/06
Jul-10
5SDF08F4505
PULSE16
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858
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Original
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04T4504
827C-360-45
1768/138a,
DM/277/08a
Aug-11
04T450A
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PDF
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06T2504
Abstract: 5SDF06T2504
Text: 5SDF 06T2504 5SDF 06T2504 Old part no. DM 827C-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196
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Original
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06T2504
827C-620-25
1768/138a,
DM/276/08a
Aug-11
06T25A
06T2504
5SDF06T2504
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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Original
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08T4505
818C-800-45
08T4505
08T4005
1768/138a,
DM/218/06
Jul-10
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PDF
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5SDF 08T4505
Abstract: No abstract text available
Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807
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Original
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08T4505
818C-800-45
1768/138a,
DM/218/06a
Aug-11
08T45A
5SDF 08T4505
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PDF
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5SDF 12T2505
Abstract: 5sDF12t2505
Text: 5SDF 12T2505 5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters
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Original
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12T2505
818C-1200-25
1768/138a,
DM/266/08b
Nov-12
Nov-12
5SDF 12T2505
5sDF12t2505
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PDF
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5SDF 12F2505
Abstract: 12F2505 dm265
Text: 5SDF 12F2505 5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters
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Original
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12F2505
1768/138a,
DM/265/08b
Nov-12
Nov-12
12F2505
5SDF 12F2505
dm265
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PDF
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5SDF12F3005
Abstract: dm265
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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Original
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08
Jul-10
5SDF12F3005
dm265
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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Original
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06D3004
06D3004
06D2504
1768/138a,
DM/267/08
Jul-10
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PDF
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5SDF06D2504
Abstract: abb 800
Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196
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Original
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06D2504
1768/138a,
DM/267/08a
Aug-11
06D250A
Aug-11
5SDF06D2504
abb 800
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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Original
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04T4504
827C-360-45
04T4504
04T4004
1768/138a,
DM/277/08
Jul-10
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PDF
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Untitled
Abstract: No abstract text available
Text: Central" CMPD4448 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.
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OCR Scan
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CMPD4448
OT-23
100mA
13-November
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E ] 74hbflSl DÜÜ43DA 32T • Û T Y European “Pro Electron” Registered T y p e s _ CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T h e CN Y33 is a gallium arsenide, infrared em itting diode
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OCR Scan
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CNY33
74hbflSl
Current10b
74bbflSl
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PDF
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FCH08A03L
Abstract: mx 306 0002011
Text: SCHOTTKY BARRIER DIODE FCH08A03L s a /s o v FEA TU RES o S im ila r to T 0-220A B Case o F u lly M olded Isolation o D u a l D iodes-C athode Com m on o L o w F o rw a rd V o ltag e D rop max" o L o w P o w er Loss, H igh Efficiency *•»•>«»*•« o H igh S urge C apability
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OCR Scan
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fch08a03l
O-220AB
FCH08A.
bblS123
Q0D201B
FCH08A03L
mx 306
0002011
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PDF
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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OCR Scan
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H11J1-H11J5
1J2H
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PDF
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