Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FR 306 DIODE Search Results

    FR 306 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    FR 306 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FR 306 Diode

    Abstract: 5SDF0103Z0400 TC 306 S
    Text: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original     		PDF 0103Z0400 1768/138a, DS/306/12b Jun-12 Jun-12 FR 306 Diode 5SDF0103Z0400 TC 306 S

    FR 306 Diode

    Abstract: No abstract text available
    Text: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original     		PDF 0103Z0400 1768/138a, DS/306/12b Jun-12 Jun-12 FR 306 Diode

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. FR301 thru FR307 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory * * * * * * * * Reverse Voltage 50 to 1000V Forward Current 3.0A Flammability Classification 94V-0 High temperature metallurgically bonded construction


    Original     		PDF FR301 FR307 MIL-S-19500 DO-201AD, DO-41 DO-15 DO-201AD 26/tape DO-201ADç DO-201AD

    fr diodes

    Abstract: No abstract text available
    Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0 B A A C D Mechanical Data · · · · · DO-201AD


    Original     		PDF FR301 FR307 DO-201AD, MIL-STD-202 DO-201AD FR304 FR305 DS26003 fr diodes

    0135Z0400

    Abstract: diode fr 207
    Text: 5SDD 0135Z0400  5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2 kHz Key Parameters = 400 V RRM


    Original     		PDF 0135Z0400 1768/138a, DS/207/06b Mar-13 0135Z04n Mar-13 0135Z0400 diode fr 207

    92Z0400

    Abstract: No abstract text available
    Text: 5SDD 92Z0400 5SDD 92Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 9 244 I FAVm


    Original     		PDF 92Z0400 92Z0400 92Z0200 1768/138a, DS/208/06a Mar-11 Mar-11

    FR301

    Abstract: FR304 FR307 PR3001G PR3007G DS26003
    Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, PLEASE USE PR3001G - PR3007G Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0


    Original     		PDF FR301 FR307 PR3001G PR3007G DO-201AD DO-201AD, MIL-STD-202 temperatur04 FR305 FR304 FR307 PR3007G DS26003

    diode fr 207

    Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
    Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526


    Original     		PDF 0135Z0400 0135Z0400 0135Z0200 1768/138a, DS/207/06a Mar-11 Mar-11 diode fr 207 5SDD0135Z0400 5sdd0135z0200 0135Z0200

    5SDF 08F4505

    Abstract: abb S 08f45
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807


    Original     		PDF 08F4505 1768/138a, DM/201/06a Aug-11 08F450A Aug-11 5SDF 08F4505 abb S 08f45

    5SDF08F4505

    Abstract: PULSE16
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 08F4505 08F4505 08F4005 1768/138a, DM/201/06 Jul-10 5SDF08F4505 PULSE16

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858


    Original     		PDF 04T4504 827C-360-45 1768/138a, DM/277/08a Aug-11 04T450A

    06T2504

    Abstract: 5SDF06T2504
    Text: 5SDF 06T2504 5SDF 06T2504 Old part no. DM 827C-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original     		PDF 06T2504 827C-620-25 1768/138a, DM/276/08a Aug-11 06T25A 06T2504 5SDF06T2504

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 08T4505 818C-800-45 08T4505 08T4005 1768/138a, DM/218/06 Jul-10

    5SDF 08T4505

    Abstract: No abstract text available
    Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807


    Original     		PDF 08T4505 818C-800-45 1768/138a, DM/218/06a Aug-11 08T45A 5SDF 08T4505

    5SDF 12T2505

    Abstract: 5sDF12t2505
    Text: 5SDF 12T2505  5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters


    Original     		PDF 12T2505 818C-1200-25 1768/138a, DM/266/08b Nov-12 Nov-12 5SDF 12T2505 5sDF12t2505

    5SDF 12F2505

    Abstract: 12F2505 dm265
    Text: 5SDF 12F2505  5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters


    Original     		PDF 12F2505 1768/138a, DM/265/08b Nov-12 Nov-12 12F2505 5SDF 12F2505 dm265

    5SDF12F3005

    Abstract: dm265
    Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 12F3005 12F3005 12F2505 1768/138a, DM/265/08 Jul-10 5SDF12F3005 dm265

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 06D3004 06D3004 06D2504 1768/138a, DM/267/08 Jul-10

    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original     		PDF 06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 04T4504 827C-360-45 04T4504 04T4004 1768/138a, DM/277/08 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPD4448 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.


    OCR Scan     		PDF CMPD4448 OT-23 100mA 13-November OT-23

    Untitled

    Abstract: No abstract text available
    Text: ÛUALITY TECHNOLOGIES CORP S7E ] 74hbflSl DÜÜ43DA 32T • Û T Y European “Pro Electron” Registered T y p e s _ CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T h e CN Y33 is a gallium arsenide, infrared em itting diode


    OCR Scan     		PDF CNY33 74hbflSl Current10b 74bbflSl

    FCH08A03L

    Abstract: mx 306 0002011
    Text: SCHOTTKY BARRIER DIODE FCH08A03L s a /s o v FEA TU RES o S im ila r to T 0-220A B Case o F u lly M olded Isolation o D u a l D iodes-C athode Com m on o L o w F o rw a rd V o ltag e D rop max" o L o w P o w er Loss, H igh Efficiency *•»•>«»*•« o H igh S urge C apability


    OCR Scan     		PDF fch08a03l O-220AB FCH08A. bblS123 Q0D201B FCH08A03L mx 306 0002011

    1J2H

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions


    OCR Scan     		PDF H11J1-H11J5 1J2H