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    onsemi FQU2N60CTLTU

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    Fairchild Semiconductor Corporation FQU2N60CTLTU

    FQU2N60CTLTU - 1.9A, 600V, 4.7ohm, N-Channel Power MOSFET '
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    Rochester Electronics FQU2N60CTLTU 5 1
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    FQU2N60CTLTU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQU2N60CTLTU Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQU2N60CTLTU_NL Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF

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    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak