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    FDU2N60C Search Results

    FDU2N60C Datasheets (1)

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    FDU2N60C Fairchild Semiconductor Transistor Mosfet N-CH 600V 1.9A 3I-PAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    FDU2N60C

    Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U

    FDU2N60C

    Abstract: FQD2N60C FQU2N60C
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C FQD2N60C FQU2N60C

    fqu2n60c

    Abstract: No abstract text available
    Text: FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS on = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQD2N60C FQU2N60C FQU2N60C

    Untitled

    Abstract: No abstract text available
    Text: TM FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C