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    FQD8P10 Price and Stock

    onsemi FQD8P10TM_F080

    MOSFET P-CH 100V 6.6A DPAK
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    DigiKey FQD8P10TM_F080 Reel
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    onsemi FQD8P10TM_F085

    Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD8P10TM-F085)
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    Avnet Americas FQD8P10TM_F085 Reel 26 Weeks 2,500
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    Chip1Stop FQD8P10TM_F085 2,452
    • 1 $1.3033
    • 10 $1.0739
    • 100 $0.8165
    • 1000 $0.556
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    onsemi FQD8P10TM

    Power MOSFET, P Channel, 100 V, 6.6 A, 530 MilliOhms, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FQD8P10TM)
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    Avnet Americas FQD8P10TM Reel 16 Weeks 2,500
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    Mouser Electronics FQD8P10TM 29,595
    • 1 $0.78
    • 10 $0.685
    • 100 $0.474
    • 1000 $0.337
    • 10000 $0.263
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    Newark FQD8P10TM Cut Tape 5,015 5
    • 1 $0.877
    • 10 $0.768
    • 100 $0.549
    • 1000 $0.468
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    FQD8P10TM Reel 2,500
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    • 10000 $0.324
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    RS FQD8P10TM Bulk 2 Weeks 5
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    Onlinecomponents.com FQD8P10TM
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    TME FQD8P10TM 2,220 1
    • 1 $0.775
    • 10 $0.775
    • 100 $0.49
    • 1000 $0.359
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    Richardson RFPD FQD8P10TM 2,500
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    Avnet Asia FQD8P10TM 16 Weeks 2,500
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    Avnet Silica FQD8P10TM 5,000 17 Weeks 2,500
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    Chip1Stop FQD8P10TM 17,500
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    FQD8P10TM 2,403
    • 1 $2.81
    • 10 $2.81
    • 100 $0.936
    • 1000 $0.621
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    FQD8P10TM 2
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    EBV Elektronik FQD8P10TM 10,000 18 Weeks 2,500
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    New Advantage Corporation FQD8P10TM 7,500 1
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    onsemi FQD8P10TM-F085

    MOSFETs 100V P-Channel QFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FQD8P10TM-F085 15,500
    • 1 $1.33
    • 10 $1.1
    • 100 $0.843
    • 1000 $0.576
    • 10000 $0.572
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    Newark FQD8P10TM-F085 Cut Tape 2,183 5
    • 1 $1.49
    • 10 $1.24
    • 100 $0.988
    • 1000 $0.852
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    FQD8P10TM-F085 Reel 2,500
    • 1 $0.688
    • 10 $0.688
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    • 1000 $0.688
    • 10000 $0.6
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    Onlinecomponents.com FQD8P10TM-F085 5,000
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    TME FQD8P10TM-F085 1
    • 1 $1.29
    • 10 $1.29
    • 100 $0.85
    • 1000 $0.66
    • 10000 $0.66
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    Avnet Silica FQD8P10TM-F085 12 Weeks 2,500
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    Chip1Stop FQD8P10TM-F085 15,000
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    EBV Elektronik FQD8P10TM-F085 13 Weeks 2,500
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    Master Electronics FQD8P10TM-F085 5,000
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    Fairchild Semiconductor Corporation FQD8P10TM

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    Bristol Electronics FQD8P10TM 2,500
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    FQD8P10TM 1,927
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    Quest Components FQD8P10TM 1,541
    • 1 $1.134
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    • 100 $0.567
    • 1000 $0.4536
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    Win Source Electronics FQD8P10TM 25,000
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    FQD8P10 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD8P10 Fairchild Semiconductor 100 V P-Channel MOSFET Original PDF
    FQD8P10 Fairchild Semiconductor 100V P-Channel MOSFET Original PDF
    FQD8P10TF Fairchild Semiconductor 100V P-Channel QFET Original PDF
    FQD8P10TF_NB82052 Fairchild Semiconductor 100V P-Channel QFET Original PDF
    FQD8P10TM Fairchild Semiconductor 100V P-Channel QFET Original PDF
    FQD8P10TM_F080 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 6.6A DPAK Original PDF
    FQD8P10TM_F085 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 6.6A DPAK-3 Original PDF
    FQD8P10TM-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 6.6A DPAK-3 Original PDF
    FQD8P10TM_SB82052 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 6.6A DPAK Original PDF

    FQD8P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQD8P10

    Abstract: FQU8P10
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD8P10 FQU8P10 -100V, FQU8P10

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD8P10 FQU8P10 -100V, FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    PDF FQD8P10 FQU8P10

    FQD8P10

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    PDF FQD8P10 FQU8P10 FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQD8P10 FQU8P10 -100V, FQD8P10TM FQD8P10TF O-252

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQD8P10TM -100V,

    Untitled

    Abstract: No abstract text available
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD8P10 FQU8P10 -100V,

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQD8P10 FQU8P10 -100V, FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 mΩ Description Features • -6.6 A, -100 V, RDS on = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


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    PDF FQD8P10 FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    PDF FQD8P10 FQU8P10

    FQU8P10TU

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU

    FQD8P10TM

    Abstract: No abstract text available
    Text: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD8P10TM -100V,

    Untitled

    Abstract: No abstract text available
    Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N


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    PDF Si3460 Si3460-EVB

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


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    PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    pwm lm2904

    Abstract: Venkel CR0603 10W TLV431 sot23 CR1210 LM319 data CR0805-10W-1004F C0603X7R101-471K 603 to252 95001-2881 CR0603
    Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in:  An introduction to Power-over-Ethernet PoE and Power Sourcing Equipment (PSE) design considerations


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    PDF Si3460 Si3460-EVB pwm lm2904 Venkel CR0603 10W TLV431 sot23 CR1210 LM319 data CR0805-10W-1004F C0603X7R101-471K 603 to252 95001-2881 CR0603

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    sensorless bldc driver circuit direct back-emf

    Abstract: 3-Phase BLDC Motor Driver 150 rpm ML4425 FQD8P10 IR2118 IRFR120 MUR150 TN6718A BLDC delta wye control application of DC MOTOR SPEED CONTROLLER
    Text: www.fairchildsemi.com ML4425 Sensorless BLDC Motor Controller Features General Description • • • • The ML4425 PWM motor controller provides all of the functions necessary for starting and controlling the speed of delta or wye wound Brushless DC BLDC motors without


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    PDF ML4425 ML4425 DS300042003 sensorless bldc driver circuit direct back-emf 3-Phase BLDC Motor Driver 150 rpm FQD8P10 IR2118 IRFR120 MUR150 TN6718A BLDC delta wye control application of DC MOTOR SPEED CONTROLLER

    common rail piezo injector driver

    Abstract: Common rail injector driver common rail injector common rail injector test FAN7093 piezo injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector voltage common rail injector driver application SCHEMATIC IGNITION WITH IGBTS
    Text: AUTOMOTIVE SOLUTIONS Power Semiconductors Maximize Efficiency and Reliability INTRODUCTION Automotive Electronic Designers need suppliers who Fairchild also offers a variety of automotive products in understand their business. With a comprehensive approach


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    PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    Sensorless BLDC Motor Controller ML4425

    Abstract: lcr5100 ML4425CS sensorless bldc motor driver ic fsb210 ML4425CSx BLDC delta wye control active brake stop switch BLDC Motor 330UF 400V ml4425cp
    Text: www.fairchildsemi.com ML4425 Sensorless BLDC Motor Controller Features General Description • • • • The ML4425 PWM motor controller provides all of the functions necessary for starting and controlling the speed of delta or wye wound Brushless DC BLDC motors without


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    PDF ML4425 ML4425 ML4425IS ML4425CS ML4425IP ML4425CP ML4425CS ML4425CSX AN-42004: Sensorless BLDC Motor Controller ML4425 lcr5100 sensorless bldc motor driver ic fsb210 BLDC delta wye control active brake stop switch BLDC Motor 330UF 400V ml4425cp

    IGBT DRIVER ignition coil automotive

    Abstract: SCHEMATIC IGNITION WITH IGBTS single phase ac motor speed control with triac HUFA76419D inverter 12v to 220 ac mosfet based
    Text: AUTOMOTIVE SOLUTIONS Power Semiconductors Maximize Efficiency and Reliability INTRODUCTION Automotive Electronic Designers need suppliers who Fairchild also offers a variety of automotive products in understand their business. With a comprehensive approach


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