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    FQU8P10 Search Results

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    FQU8P10 Price and Stock

    Flip Electronics FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    DigiKey FQU8P10TU Bulk 2,000
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    onsemi FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    DigiKey FQU8P10TU Tube
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    Newark FQU8P10TU Bulk 530 1
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    Rochester Electronics FQU8P10TU 43,870 1
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    Flip Electronics FQU8P10TU 14,136
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    Rochester Electronics LLC FQU8P10TU

    POWER FIELD-EFFECT TRANSISTOR, 6
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    DigiKey FQU8P10TU Bulk 745
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    Fairchild Semiconductor Corporation FQU8P10TU

    FQU8P10 - Power Field-Effect Transistor, 6.6A, 100V, 0.53ohm, P-Channel, MOSFET, TO-251
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    Rochester Electronics FQU8P10TU 94,502 1
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    ComSIT USA FQU8P10TU 2,240
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    FQU8P10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU8P10 Fairchild Semiconductor 100 V P-Channel MOSFET Original PDF
    FQU8P10 Fairchild Semiconductor 100V P-Channel MOSFET Original PDF
    FQU8P10TU Fairchild Semiconductor 100V P-Channel QFET Original PDF

    FQU8P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQD8P10

    Abstract: FQU8P10
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD8P10 FQU8P10

    FQD8P10

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD8P10 FQU8P10 FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQD8P10TM FQD8P10TF O-252

    Untitled

    Abstract: No abstract text available
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V,

    FQD8P10

    Abstract: FQU8P10
    Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 mΩ Description Features • -6.6 A, -100 V, RDS on = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD8P10 FQU8P10

    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD8P10 FQU8P10

    FQU8P10TU

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

    fairchild mosfet selection guide

    Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics


    Original     		PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08