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FILTRONETICS Inc FPD2250SOT89 SI, N-CHANNEL, RF POWER, HEMFET
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FPD2250SOT89 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FPD2250SOT89		Filtronic	Low Noise High Linearity Packaged pHEMT		Original	PDF
FPD2250SOT89CE		Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT		Original	PDF
FPD2250SOT89E		Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT		Original	PDF

FPD2250SOT89 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FPD2250SOT89 Abstract: FPD2250 Text: Balanced EBD2250SOT89-AA FPD2250SOT89 1.85GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.7 1.85 31.4 31.2 15.2 14.8 0.9 0.9 43.0 44.0 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described	Original	EBD2250SOT89-AA FPD2250SOT89 85GHz 150mA 1700MHz FPD2250SOT89; 150mA FPD2250	PDF
9421 Abstract: FPD2250SOT89 Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB2250SOT89BB FPD2250SOT89 900MHz 28dBm 39dBm 18dBm 300mA FPD2250SOT89; 2250m 30mil 9421	PDF
FPD2250 Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components Text: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E	Original	FPD2250SOT89 FPD2250SOT89E FPD2250SOT89 FPD2250 FPD2250SOT89E MIL-HDBK-263 Filtronic Components	PDF
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370 Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant	Original	FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370	PDF
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250 Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250	PDF
41dBm Abstract: FPD2250SOT89 Text: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB2250SOT89BC FPD2250SOT89 29dBm 41dBm FPD2250SOT89; 2250m 30mil	PDF
pseudomorphic HEMT Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250 Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250	PDF
2.4GHz amplifier schematic Abstract: 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic FPD2250SOT89 Text: EB2250SOT89BE FPD2250SOT89 2.4GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.2 2.4 30.0 30.0 11.5 11.0 1.2 1.5 41.0 41.0 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB2250SOT89BE FPD2250SOT89 300mA FPD2250SOT89; 2250m 30mil 2.4GHz amplifier schematic 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic	PDF
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures	PDF
FPD2250SOT89 Abstract: FPD2250 Text: EB2250SOT89BA FPD2250SOT89 1.85GHz EVALUATION BOARD FEATURES Measured Noise Figure 1.00 0.80 N.F. dB • • ¥ ¥ ¥ Measured @ 1.85GHz 29dBm Output Power 14.5dB Gain 42dBm OIP3 Noise Figure 0.7dB Bias 5V, 300mA 0.60 0.40 0.20 N.F.1 (dB) 0.00 N.F.2(dB)	Original	EB2250SOT89BA FPD2250SOT89 85GHz 85GHz 29dBm 42dBm 300mA 85GHz. FPD2250SOT89; 2250m FPD2250	PDF
FPD2250 Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT Text: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant	Original	FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD2250 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE MIL-HDBK-263 FPD1500SOT89 Filtronic Compound Semiconductors FPD2250SOT	PDF
FPD2250DFN Abstract: FPD2250SOT89 MIL-HDBK-263 Text: FPD2250DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 16.5 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	FPD2250DFN FPD2250DFN FPD2250SOT89 MIL-HDBK-263	PDF
RF5632 Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product	Original		PDF
pnp-1500-p22 Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16 Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product	Original		PDF