2SK2668
Abstract: FP3W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2668
FP3W90HVX2
2SK2668
FP3W90HVX2
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2SK2668
Abstract: FP3W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2668
FP3W90HVX2
2SK2668
FP3W90HVX2
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2SK2668
Abstract: FP3W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
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2SK2668
FP3W90HVX2
2SK2668
FP3W90HVX2
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Untitled
Abstract: No abstract text available
Text: H V X -ïïv U -X A 9 -M 0 SFET HVX-n SERIES POWER MOSFET N-fr-V m KM O U T L IN E D IM E N S IO N S Case : ITO-3P 2SK2668 n.2-°-2 FP3W90HVX2 900v 3a + % Date code oa 5.5±0-3 ÎS.O *« @ ¡" 5 9 ^ K2668 EIAJ No. " W 3.3±0-3 2.1MAX-H 2.1 MAX ± 0.2 l,Q±0-2
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2SK2668
FP3W90HVX2)
K2668
90HVX2)
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2SK1683
Abstract: FP3W90
Text: H V X v U -X A 7-M 0SFE T HVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1683 FP3W90 900v 3 a • Æ fè ü R A T IN G S A b s o lu te M axim u m R a tin g s m i •IB-. # ' Symbol Ite m Ä « « R atings U n it S to r a g e T e m p e ra tu r e
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2SK1683
FP3W90)
2SK1683
FP3W90
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k168
Abstract: K1683 2SK1683 FP3W90
Text: H V X y 'j - X /\0|7 — M O S FE T HVX Series Pow er MOSFET OUTLINE DIMENSIONS 2SK1683 Case : 1TO-3P [FP3W90] 15.0 ±0 3 900V 3A S n e # fli D a te co d e (Ciss) ò'/jv£U ì0 PEI 'â 2 - K K 383 ) s . 3 it E IA J No. Jfe 2.1 max •A C 2 4 0 V ^A m ^ y i K
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2SK1683
FP3W90]
K1683
k168
K1683
2SK1683
FP3W90
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Untitled
Abstract: No abstract text available
Text: H V X -ÏÏS / 'J -X /X7 -M 0SFET H V X -n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I ITO-3P 2SK2668 5.5 ' 0-3 — - -1 FP3W90HVX2 900v 3a 3 .3 'U 0.7 ’ n-2 ¡•« ■ p H p n ra [ Uni t ‘ mm] R A TIN G S A b s o lu te M axim um R a tin g s
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FP3W90HVX2)
2SK2668
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k168
Abstract: K1683 2SK1683 FP3W90
Text: HVXvU-X /\°7 -M 0 S F E T ¡Si HVX Series Power MOSFET OUTLINE DIMENSIONS 2SK1683 Case ; JTQ-3P [FP3W90 [Unit ; ram] 900V 3A lE lg i • A * § M Ciss) m z M U M 7 X K A * S B 6 '/ J \S 0 V • X 'f 'y ^ y v s 'f h . f f m i c ffl V^ y ^ n m •ac24ov*a
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2SK1683
FP3W90]
AC240V3SAÂ
-K1683
k168
K1683
2SK1683
FP3W90
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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Untitled
Abstract: No abstract text available
Text: H V X '> 'J - X ; t 7 - M 0 S F E T H V X SERIES POWER MOSFET N-5LjP ^ l / ,X > A > 7 .^ > h M • O U T L IN E D IM E N S IO N S 2SK1683 F P 3 W 9 0 900v 3a ■ Æ fêSt RATINGS A b s o lu te M axim um R a tin g s m Ite m s IE -§• Sym bol fk # C o n d itio n s
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2SK1683
FP3W90)
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