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    FP-26 TRANSISTOR Search Results

    FP-26 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FP-26 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M81049

    Abstract: M81049P SDIP20 DIP20-P-300-2
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M81049P/SP/FP OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR DESCRIPTION M81049 is octal D-type flip-flop driver by 20-pin package. It has 8 same circuit units which is composed of D-type flip-flop logic circuit and high voltage NchMOS output transistor.


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    PDF M81049P/SP/FP M81049 20-pin 20P2N-A 20pin 300mil OP20-P-300-1 M81049P SDIP20 DIP20-P-300-2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M81049P/SP/FP OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR DESCRIPTION M81049 is octal D-type flip-flop driver by 20-pin package. It has 8 same circuit units which is composed of D-type flip-flop logic circuit and high voltage NchMOS output transistor.


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    PDF M81049P/SP/FP M81049 20-pin 20pin 300mil OP20-P-300-1

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


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    PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    PDF BFG520W; BFG520W/X BFG520W

    BD6232

    Abstract: BD6231 BD6237 BD6222 BD6230HFP
    Text: For brush motors H-bridge drivers 36V max. BD6230, BD6231, BD6232, BD6235, BD6236, BD6237 No.09007ECT03  Overview These H-bridge drivers are full bridge drivers for brush motor applications. Each IC can operate at a wide range of power supply voltages (from 3V to 36V), supporting output currents of up to 2A. MOS transistors in the output stage allow for


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    PDF BD6230, BD6231, BD6232, BD6235, BD6236, BD6237 09007ECT03 R0039A BD6232 BD6231 BD6237 BD6222 BD6230HFP

    BD6222

    Abstract: BD6221 basic motor reverse forward electrical diagram BD6221F BD6232 HSOP25 BD6222 reverse
    Text: For brush motors H-bridge drivers 18V max. No.09007ECT02 BD6220, BD6221, BD6222, BD6225, BD6226, BD6227  Overview These H-bridge drivers are full bridge drivers for brush motor applications. Each IC can operate at a wide range of power supply voltages (from 3V to 36V), supporting output currents of up to 2A. MOS transistors in the output stage allow for


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    PDF 09007ECT02 BD6220, BD6221, BD6222, BD6225, BD6226, BD6227 R0039A BD6222 BD6221 basic motor reverse forward electrical diagram BD6221F BD6232 HSOP25 BD6222 reverse

    HSOP-M28

    Abstract: BD6216FM BD6222 BD6232 24GND
    Text: For brush motors H-bridge drivers 7V max. BD6210, BD6211, BD6212, BD6215, BD6216, BD6217 No.09007ECT01  Overview These H-bridge drivers are full bridge drivers for brush motor applications. Each IC can operate at a wide range of power supply voltages (from 3V to 36V), supporting output currents of up to 2A. MOS transistors in the output stage allow for


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    PDF BD6210, BD6211, BD6212, BD6215, BD6216, BD6217 09007ECT01 R0039A HSOP-M28 BD6216FM BD6222 BD6232 24GND

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Transistors with High Reverse Voltage • • • • B FP 22 B FP 25 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BFP 23, BFP 26 PNP Type Marking Ordering Code (tape and reel) BFP 22


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    PDF Q62702-F621 Q62702-F721 E35b05 fiS35b05

    cd 5411

    Abstract: 54175 CD 5401 7400 Series 4-bit Bi-Directional Shift Register 7400 J-K Flip-Flop Signetics 54123
    Text: Tft SIGNETICS INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic consists of medium speed TTL integrated circuits. This high noise immunity family was designed for general digital logic applications requiring clock frequencies to 30 MHz and


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    PDF 14-LEAD -24-LEAD 24-LEAD 16-LEAD cd 5411 54175 CD 5401 7400 Series 4-bit Bi-Directional Shift Register 7400 J-K Flip-Flop Signetics 54123

    11S2

    Abstract: BUZ11 BUZ11A BUZ11S2
    Text: SIEMENS SIPMOS Power MOS Transistors BUZ 11 BUZ 11A BUZ 11S2 = 50 . . 60 V ^DS = 26 . . 30 A h "•DSfoni = 0.04 . . 0.055 Q Rn • • • • N channel Enhancement mode Avalanche-proof Package: T Q -2 2 0 A B 1 Type Ordering code BUZ 11 C67078-A1301-A2


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    PDF C67078-A1301-A2 C67078-S1301-A3 C67078-S1301-A5 11/11A 11S2 BUZ11 BUZ11A BUZ11S2

    54h00

    Abstract: 54H32
    Text: LANSDALE SEMICONDUCTOR 17E D • 53^003 3 GQ0D302 b T - 5 H 1 Ill 111 1£ MOTOROLA INTEGRATED CIRCUITS 3OOO/74HO0 Series 3100/54H00 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a


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    PDF GQ0D302 3OOO/74HO0 3100/54H00 54H00) b-G7-07 14-LEAD 16-LEAD 54h00 54H32

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    transistor buz 11

    Abstract: No abstract text available
    Text: SIEMENS BUZ 11 AL N ot for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V'ds BUZ 11 AL 50 V k> 26 A AbS on 0.055 n Package Ordering Code TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter


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    PDF O-220 C67078-S1330-A3 transistor buz 11

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 G67078-S1301 AE35b05 fl235bCIS 00fl4030

    BSS101 siemens

    Abstract: No abstract text available
    Text: SIEMENS BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 D G Type VDS b ffDS(on) Package Marking BSS 101 240 V 0.13 A 16 Q TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code


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    PDF Q62702-S493 Q62702-S636 E6288 E6325 BSS101 BSS101 siemens

    dfp 740

    Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli­ fiers. The new metal-ceramic package is used to reduce


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    PDF MGF4511D MGF4511D 18GHz GD-15 M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) dfp 740 DFP 830 m5m27c102pffp

    Untitled

    Abstract: No abstract text available
    Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5


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    PDF O-220 C67078-S1302-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    transistor Siemens 14 S S 92

    Abstract: transistor 115 47e
    Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code


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    PDF 023SbOS T-21-Z5 Q67000-S078 Q67000-S060 chap60 235b05 transistor Siemens 14 S S 92 transistor 115 47e

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ10S2 Not for new design SIPMOS @Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ10S2 ^bs 60 V to HDS on Package Ordering Code 23 A 0.07 Í 2 TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Values Continuous drain current


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    PDF BUZ10S2 O-220 C67078-S1300-A7 A235bG5 A235b05

    GP 809 DIODE

    Abstract: BUZ,271
    Text: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


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    PDF O-220 C67078-S1453-A2 GP 809 DIODE BUZ,271

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS lD ^D S o n • • • • • BUZ 11 AL = 50 V = 26 A = 0.055 Q N channel E nhancem ent mode Logic level A valanche-proof Package: T O -2 2 0 A B ') Type Ordering code BUZ 11 AL C 6 70 78-S 1 33 0-A 3 Maximum Ratings


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    PDF SIL0000117 SIL00032 SIL0000127

    transistor buz 10

    Abstract: transistor buz
    Text: SIEMENS SIPMOS Power MOS Transistor BUZ 10 L vDS lD = 50 v = 23 A ^DS cin| = 0.07 Q • • • • • N channel Enhancem ent m ode Logic level A valan che-p roo f Package: T O -2 2 0 A B 1 Type Ordering code BUZ 10 L C 6 70 78-S 1 32 9-A 2 Maximum Ratings


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    PDF SIL00032 SIL00096 transistor buz 10 transistor buz

    BUZ10A

    Abstract: 10S2 buz10
    Text: SIEMENS SIPMOS Power MOS Transistors Vos lD ^ D S o n • • • • BUZ 10 BUZ10S2 = 5 0 /6 0 V = 2 3 /2 4 A = 0.07 Q N channel Enhancement mode Avalanche-proof Package: TO -220A B ') Type Ordering code BUZ 10 C67078-S1300-A2 BUZ 10S 2 C67078-S1300-A7


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    PDF BUZ10S2 -220A C67078-S1300-A2 C67078-S1300-A7 BUZ10A 10S2 buz10

    bss101

    Abstract: bss 419
    Text: SIEMENS BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 CO Type b 0.13 A BSS 101 240 V Type BSS 101 BSS 101 BSS 101 Ordering Code Q62702-S484 Q62702-S493 Q62702-S636 Pin 3 G


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    PDF Q62702-S484 Q62702-S493 Q62702-S636 E6288 E6325 bss101 bss 419