Untitled
Abstract: No abstract text available
Text: JANSR2N7403 h a r r is S E M I C O N D U C T O R * mm w m m ^ m m m m m v W ' Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS oN = 0-140i2 The Discrete Products Operation of Harris Semiconductor
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JANSR2N7403
FSF9150R4,
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)
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FSF150D,
FSF150R
O-254AA
10OkRAD
36MeV/mg/cm2
for3E13
1-800-4-HARRIS
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CLCC-18
Abstract: No abstract text available
Text: FRX130D, FRX130R, FRX130H h a r r is S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, Td s ON = 0-180i2 The Harris Sem iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of
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FRX130D,
FRX130R,
FRX130H
1000K
1E13n/cm
1E14n/cm
CLCC-18
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