Untitled
Abstract: No abstract text available
Text: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)
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FSF150D,
FSF150R
O-254AA
10OkRAD
36MeV/mg/cm2
for3E13
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: Lin fiA R . TECHNOLOGY _ RH1078M Micropower, Dual, Single Supply Precision Op Amp DCSCRIPTIOn r b s o iu t c The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ± 1 5V are
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RH1078M
RH1078M
1078M
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Untitled
Abstract: No abstract text available
Text: _ RH27C / t i h t o TECHNOLOGY - Precision Operational Amplifier DCSCRIPTIOn R B S O LU T6 m n x im u m r r t i í i g s The RH27C combines very low noise with excellent preci sion and high speed specifications. The low 1/f noise corner frequency of 2.7H z combined with 3.5nVVHz 10Hz
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RH27C
10-Lead
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Untitled
Abstract: No abstract text available
Text: r r u n RH1078M m TECHNOLOGY Micropower, Dual, Single Supply Precision Op Amp D C S C R IP T IO fl a b s o lu te The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ±15V are
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RH1078M
RH1078M
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Untitled
Abstract: No abstract text available
Text: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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2N7285D,
2N7285R
FRM240
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
42PH0TC
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY S E M I C O N D U C T O R S DS3518-3.2 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's CMOS-SOS high perform ance, radiation hard, 3jim technology. The GPS Silicon-on-Sapphire process provides significant
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DS3518-3
MA7001
MA7001
1015n/cm2,
MIL-STD-883
1x105
1x1012
1x1015
37bflS22
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transistor 8831
Abstract: 4204 photo diode
Text: J ll H a r r i s U U S E M I C O N D U C T O R FRS9240D, FRS9240R, FFÎS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRS9240D,
FRS9240R,
S9240H
-200V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
transistor 8831
4204 photo diode
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R 2N7292D, 2N7292R 21^72Q2'H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Package Features • 25A, 100V, RDS(on) = 0.07Q
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2N7292D,
2N7292R
FRF150
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H November 1994 2N7287D, 2N7287R 2N7287H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 12A, 250V, RDS(on) = 0.400Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM244
2N7287D,
2N7287R
2N7287H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
7643U
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts
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FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
FRL420PH0T0
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05-08-1322
Abstract: RH1056A
Text: U ilfiA R _ TECHNOLOGY RHI056A Precision, High Speed, JFET Input Operational Amplifier DCSCRIPTIOn nftsoiuTt mnximum RnnnGs The RH1056A JFET input operational amplifiers combine precision specifications with high speed performance. Supply Voltage. ±20V
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RHI056A
RH1056A
10-Lead
05-08-1322
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Untitled
Abstract: No abstract text available
Text: m a r r is S E M I C O N D U C T O R 2N7290D, 2N7290R 21^7290H REGISTRATION PENDING Currently Available as FRS440 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 5A, 500V, RDS(on) = 1,420ft TO-257AA
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2N7290D,
2N7290R
7290H
FRS440
420ft
100KRAD
300KRAD
1000KRAD
3000KRAD
-257AA
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RH1086M
Abstract: No abstract text available
Text: /Tw m _ RH1086M TECHNOLOGY q.5A and 1.5A Low Dropout Positive Adjustable Regulators D C S C R IP T IO n a b s o lu te T h e R H 1 0 8 6 M positive adjustable regu lator is d e sign e d to P o w e r D i s s ip a t io n . Internally Lim ite d
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RH1086M
RH1086M
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Untitled
Abstract: No abstract text available
Text: r r w m . TECHNOLOGY _ RH111 V o lta g e C o m p a r a t o r DCSCRIPTIOn nßsoiuTC mnximum RnnnGs The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time
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RH111
RH111
200ns.
10-Lead
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Untitled
Abstract: No abstract text available
Text: r ru v TECHNOLOGY m . _ RH119 High Performance Dual Comparator D C S C R IP TIO n r b s o iu t c T h e R H 1 1 9 dual c o m p a r a t o r feature s l o w input offset S u p p l y V o l t a g e . 3 6 V
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RH119
10-Lead
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Untitled
Abstract: No abstract text available
Text: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant
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MA7001
MA7001
1015n/cma,
MIL-STD-883
1x105
37bflS22
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S/A3N01
Abstract: No abstract text available
Text: S i GEC PLESSEY S E M I C O N D U C T O R S DS3597-2.4 MACROSOS1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS’s Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving
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DS3597-2
37bflS22
37bfl522
S/A3N01
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Untitled
Abstract: No abstract text available
Text: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)
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FRE9260D,
FRE9260R,
FRE9260H
-200V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: iSì h a r r is UU S E M I C O N D U C T O R FRS130D, FRS130R, FRS130H 12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 100V, RDS on = 0.1950 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concept*
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FRS130D,
FRS130R,
FRS130H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: r r u n RH1021-7 m TECHNOLOGY Precision 7V R eference mnximum r r t iíig s D C S C R IP TIO n absolute The RH1021-7 is a precision 7V reference with ultralow drift and noise, extremely good long-term stability and almost total immunity to input voltage variations. The
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RH1021-7
RH1021-7G03
RH1Q21-7
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SRFE
Abstract: No abstract text available
Text: H a rris 2N7291D, 2N7291R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRK150 D, R, H November 1994 1 ^ 7 2 9 1 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 40A, 100V, RDS(on) = 0.055Q
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2N7291D,
2N7291R
FRK150
100KRAD
300KRAD
1000KRAD
3000KRAD
35MeV/mg/cm2
50IJIS
SRFE
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Untitled
Abstract: No abstract text available
Text: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)
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FSF254D,
FSF254R
O-254AA
170i2
100kRAD
36MeV/mg/cm2
1-800-4-HARRIS
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A014G
Abstract: No abstract text available
Text: _ RH37C / t i h t o TECHNOLOGY - Precision Operational Amplifier DCSCRIPTIOn R B S O LU T6 m n x im u m r r t i í i g s The RH37C combines very low noise with excellent preci sion and high speed specifications. The low 1/f noise corner frequency of 2.7H z combined with 3.5nVVHz 10Hz
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RH37C
10-Lead
A014G
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y SE M I C O N D U C T O R S DS3597-2 3 M ACRO SO S1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS's Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving
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DS3597-2
37bfl522
37bflS22
D052134
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