IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes
|
Original
|
O-220
Q101-Compliant
IRFP60A
40A 45V to-220 Schottky
IRF7210
ir*c30ud
IRFB9N65
2CWQ03FN
IR 200V P-Channel fets
IRFIB7N50A CONVERTER
IRG4IBC10UD
876-1413
|
PDF
|
short circuit tracer
Abstract: MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964
Text: IR Application Note AN-986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Background II. A model for the ESD test circuit III. Experimental verification
|
Original
|
AN-986
short circuit tracer
MOS-Gated Transistors
ESD Pushbutton data sheet
Simple test MOSFET Procedures
AN-964
|
PDF
|
AN994
Abstract: AN-955 AN-994 SMD-220
Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA
|
Original
|
AN-994
SMD-220
O-263)
O-252)
OT-223
O-261)
OT-23)
OT-89
O-243
AN994
AN-955
AN-994
SMD-220
|
PDF
|
AN-994
Abstract: AN994 HEXFET SO-8 AN-955 SMD-220 9417
Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA
|
Original
|
AN-994
SMD-220
O-263)
O-252)
OT-223
O-261)
OT-23)
OT-89
O-243
AN-994
AN994
HEXFET SO-8
AN-955
SMD-220
9417
|
PDF
|
corona treatment circuit
Abstract: AN-955 corona discharge circuit esd protect mosfet MOSFET ESD Rated
Text: IR Application Note AN-955 TITLE: Protecting IGBTs and MOSFETs from ESD Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Most power MOSFET users are very familiar with this warning. The problem is that familiarity may breed contempt, especially if one has never destroyed a power
|
Original
|
AN-955
corona treatment circuit
AN-955
corona discharge circuit
esd protect mosfet
MOSFET ESD Rated
|
PDF
|
for IR hexfet die
Abstract: 90421 irfc044
Text: PD- 91874 IRFC044 HEXFET Power MOSFET Die in Wafer Form D 60 V Size 4.0 Rds on =0.034Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance
|
Original
|
IRFC044
12-Mar-07
for IR hexfet die
90421
irfc044
|
PDF
|
for IR hexfet die
Abstract: No abstract text available
Text: PD- 91873 IRFC240 HEXFET Power MOSFET Die in Wafer Form D 200 V Size 4.0 Rds on =0.18Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance
|
Original
|
IRFC240
12-Mar-07
for IR hexfet die
|
PDF
|
HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
|
OCR Scan
|
AN-955.
AN-986.
AN-966.
-250V
AN-964D
HEXFET III - A new Generation of Power MOSFETs
irf 1490
AN-964D
irfc9024
AN-966
1000V P-channel MOSFET
application new hexfet
AN966
transistor 9527
IRFC210
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed
|
OCR Scan
|
2110C
IR2110C
IR2110
IR2110C
|
PDF
|
h bridge ir2110
Abstract: ci ir2110 IR2110 H bridge driver circuit IR2110C PD6011
Text: I N TERNATIONAL R EC TIFIER b5E D • 4055452 DG1Ö173 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IOR IR 2 H O C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to Data Sheet No. PD-6.011B ; a high voltage, high speed
|
OCR Scan
|
IR2110C
IR2110
h bridge ir2110
ci ir2110
IR2110 H bridge driver circuit
PD6011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage
|
OCR Scan
|
IRGCH50ME
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage
|
OCR Scan
|
IRGCC30FE
IRGCC30FE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage
|
OCR Scan
|
PM1426
IRGCC40UE
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage
|
OCR Scan
|
IRGCH20SE
250pA,
250pA
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage
|
OCR Scan
|
IRGCH40SE
250pA,
250pA
|
PDF
|
IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
|
OCR Scan
|
AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
|
PDF
|
MT29VZZZAD8DQKSM-053 W ES.9D8
Abstract: No abstract text available
Text: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
|
OCR Scan
|
IRGCH30SE
IRGCH30SE
250pA,
250pA
MT29VZZZAD8DQKSM-053 W ES.9D8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage
|
OCR Scan
|
IRGCC40FE
IRGCC40FE
|
PDF
|
GBAN-PVI-1
Abstract: HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report
Text: x @r | Other Products from IR Available Literature DATABOOKS GOVERNMENT AND SPACE PRODUCTS DESIGNER’S M A N U A L . GSP-1 HEXFET DESIGNER’S MANUAL - APPLICATION NOTES & RELIABILITY DATA. HDM-1, VOL. 1
|
OCR Scan
|
IR6000
IR2155
GBAN-PVI-1
HEXFET Power MOSFET designer manual GBAN-PVI-1
HEXFET Power MOSFET designer manual
mosfet reliability testing report
power supply using IR2155
IR2113 inductive motor control
957B
Spice 2 computer models for hexfets
HV Floating MOS-Gate Driver circuits
power MOSFET reliability report
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter
|
OCR Scan
|
IRGCH50FE
IRGCH50FE
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
|
OCR Scan
|
IRGCH50SE
IRGCH50SE
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V
|
OCR Scan
|
IRGCC30UE
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage
|
OCR Scan
|
IRGCC50FE
250pA,
250pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.
|
OCR Scan
|
IRGCH50KE
IRGCH50KE
250pA,
250pA
|
PDF
|
