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    FOR IR HEXFET DIE Search Results

    FOR IR HEXFET DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    FOR IR HEXFET DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP60A

    Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
    Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes


    Original     		PDF O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413

    short circuit tracer

    Abstract: MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964
    Text: IR Application Note AN-986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Background II. A model for the ESD test circuit III. Experimental verification


    Original     		PDF AN-986 short circuit tracer MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964

    AN994

    Abstract: AN-955 AN-994 SMD-220
    Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA


    Original     		PDF AN-994 SMD-220 O-263) O-252) OT-223 O-261) OT-23) OT-89 O-243 AN994 AN-955 AN-994 SMD-220

    AN-994

    Abstract: AN994 HEXFET SO-8 AN-955 SMD-220 9417
    Text: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA


    Original     		PDF AN-994 SMD-220 O-263) O-252) OT-223 O-261) OT-23) OT-89 O-243 AN-994 AN994 HEXFET SO-8 AN-955 SMD-220 9417

    corona treatment circuit

    Abstract: AN-955 corona discharge circuit esd protect mosfet MOSFET ESD Rated
    Text: IR Application Note AN-955 TITLE: Protecting IGBTs and MOSFETs from ESD Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Most power MOSFET users are very familiar with this warning. The problem is that familiarity may breed contempt, especially if one has never destroyed a power


    Original     		PDF AN-955 corona treatment circuit AN-955 corona discharge circuit esd protect mosfet MOSFET ESD Rated

    for IR hexfet die

    Abstract: 90421 irfc044
    Text: PD- 91874 IRFC044 HEXFET Power MOSFET Die in Wafer Form D 60 V Size 4.0 Rds on =0.034Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF IRFC044 12-Mar-07 for IR hexfet die 90421 irfc044

    for IR hexfet die

    Abstract: No abstract text available
    Text: PD- 91873 IRFC240 HEXFET Power MOSFET Die in Wafer Form D 200 V Size 4.0 Rds on =0.18Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original     		PDF IRFC240 12-Mar-07 for IR hexfet die

    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed


    OCR Scan     		PDF 2110C IR2110C IR2110 IR2110C

    h bridge ir2110

    Abstract: ci ir2110 IR2110 H bridge driver circuit IR2110C PD6011
    Text: I N TERNATIONAL R EC TIFIER b5E D • 4055452 DG1Ö173 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IOR IR 2 H O C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to Data Sheet No. PD-6.011B ; a high voltage, high speed


    OCR Scan     		PDF IR2110C IR2110 h bridge ir2110 ci ir2110 IR2110 H bridge driver circuit PD6011

    Untitled

    Abstract: No abstract text available
    Text: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage


    OCR Scan     		PDF IRGCH50ME 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage


    OCR Scan     		PDF IRGCC30FE IRGCC30FE

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage


    OCR Scan     		PDF PM1426 IRGCC40UE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage


    OCR Scan     		PDF IRGCH20SE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage


    OCR Scan     		PDF IRGCH40SE 250pA, 250pA

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    MT29VZZZAD8DQKSM-053 W ES.9D8

    Abstract: No abstract text available
    Text: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.


    OCR Scan     		PDF IRGCH30SE IRGCH30SE 250pA, 250pA MT29VZZZAD8DQKSM-053 W ES.9D8

    Untitled

    Abstract: No abstract text available
    Text: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage


    OCR Scan     		PDF IRGCC40FE IRGCC40FE

    GBAN-PVI-1

    Abstract: HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report
    Text: x @r | Other Products from IR Available Literature DATABOOKS GOVERNMENT AND SPACE PRODUCTS DESIGNER’S M A N U A L . GSP-1 HEXFET DESIGNER’S MANUAL - APPLICATION NOTES & RELIABILITY DATA. HDM-1, VOL. 1


    OCR Scan     		PDF IR6000 IR2155 GBAN-PVI-1 HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter


    OCR Scan     		PDF IRGCH50FE IRGCH50FE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.


    OCR Scan     		PDF IRGCH50SE IRGCH50SE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		PDF IRGCC30UE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage


    OCR Scan     		PDF IRGCC50FE 250pA, 250pA

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.


    OCR Scan     		PDF IRGCH50KE IRGCH50KE 250pA, 250pA