IRGCC40UE
Abstract: IRGPC40U
Text: PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40UE
IRGCC40UE
IRGPC40U
IRGPC40U
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IRGCC40
Abstract: IRGCC40UE IRGPC40U
Text: Previous Datasheet Index Next Data Sheet PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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Original
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PDF
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IRGCC40UE
IRGCC40UE
IRGPC40U
IRGCC40
IRGPC40U
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Untitled
Abstract: No abstract text available
Text: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage
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OCR Scan
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PM1426
IRGCC40UE
250pA,
250pA
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