FMH28N50ES
Abstract: Schematics 5250 fmh28n50e
Text: FMH28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH28N50ES
FMH28N50ES
Schematics 5250
fmh28n50e
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FMH28N50E
Abstract: FMH2
Text: FMH28N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH28N50E
FMH28N50E
FMH2
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28N50ES
Abstract: 28N50 ic MARKING QG FMH28N50ES 28N50E
Text: DATE CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMH28N50ES
MS5F7239
H04-004-05
H04-004-03
28N50ES
28N50
ic MARKING QG
FMH28N50ES
28N50E
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28N50E
Abstract: 28N50
Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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MS5F6927
FMH28N50E
H04-004-05
H04-004-03
28N50E
28N50
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FMV07N90E
Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)
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O-220
O-220F
FMH28N50ES
FMH23N50ES
FMH21N50ES
FMH280E
FMC06N80E
FMI09N70E
FMI07N70E
FMC09N70E
FMV07N90E
fmh*23N50E
FMP08N80E
FMV07N70E
FMV06N80E
FMC07N65E
FMV13N80E
D2PACK
FMI07N90E
FMV07N65E
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fmh*23N50E
Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
Text: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for
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ERA82-004
SC802-04
ERA81-004
ERB81-004
ERC81-004
SC802-06
ERA83-006
ERA85-009
ERA92-02
SC9202-2
fmh*23N50E
FMH23N50E
N-channel MOSFET to-247
fmv23n50e
ic 2535
fmh23n50
FGW40N120HD
FMV20N60S1
FMW30N60S1HF
FMW20N60S1HF
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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