fmv23n50e
Abstract: No abstract text available
Text: FMV23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV23N50E
O-220F
fmv23n50e
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FMV23N50ES
Abstract: fmv23n50e
Text: FMV23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV23N50ES
O-220F
FMV23N50ES
fmv23n50e
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FMV07N90E
Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)
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O-220
O-220F
FMH28N50ES
FMH23N50ES
FMH21N50ES
FMH280E
FMC06N80E
FMI09N70E
FMI07N70E
FMC09N70E
FMV07N90E
fmh*23N50E
FMP08N80E
FMV07N70E
FMV06N80E
FMC07N65E
FMV13N80E
D2PACK
FMI07N90E
FMV07N65E
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fmh*23N50E
Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
Text: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for
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ERA82-004
SC802-04
ERA81-004
ERB81-004
ERC81-004
SC802-06
ERA83-006
ERA85-009
ERA92-02
SC9202-2
fmh*23N50E
FMH23N50E
N-channel MOSFET to-247
fmv23n50e
ic 2535
fmh23n50
FGW40N120HD
FMV20N60S1
FMW30N60S1HF
FMW20N60S1HF
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23n50e
Abstract: 23N50ES fmv23n50e Ic C 141 23n50
Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMV23N50ES
MS5F7236
H04-004-05
H04-004-03
23n50e
23N50ES
fmv23n50e
Ic C 141
23n50
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