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    siemens sab 82532

    Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
    Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


    OCR Scan     		PDF CRC-32 235b05 82532N-10. 00702fl2 siemens sab 82532 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525

    Untitled

    Abstract: No abstract text available
    Text: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,


    OCR Scan     		PDF E35bD5 8-/16-Bit 16-bit 16/8-bit flS35b05 T-52-33-7g

    82C54-2-P

    Abstract: No abstract text available
    Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes


    OCR Scan     		PDF 235b05 0G321ff 82C54 82C54 82C54-2 16-bit 82C54-2) 24-pin P-DIP-24) 82C54-2-P

    Untitled

    Abstract: No abstract text available
    Text: 47E D • SIEM EN S A235bGS 0034130 SIEMENS AKTIENGESELLSCHAF Infrared Signal Receiver 4 ■ SIE6 TDA 4065 Preliminary Data Bipolar 1C Features • • • • • • High input sensitivity Improved com pensation for extraneous light in range of normal indoor illuminance


    OCR Scan     		PDF A235bGS Q67000-A8246 4065-X 67000-A8247 fl235b05

    BD 61 9 40

    Abstract: No abstract text available
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


    OCR Scan     		PDF 23StQS 617itter BD615 Q0Q43 TcaMS25' BD 61 9 40

    Untitled

    Abstract: No abstract text available
    Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package


    OCR Scan     		PDF BSS98 Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2

    Q907

    Abstract: Q67100-Q915 Q554b
    Text: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:


    OCR Scan     		PDF 5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80 235b05 D0SSH72 Q907 Q67100-Q915 Q554b

    Untitled

    Abstract: No abstract text available
    Text: flSBSbOS GDIETME SIEMENS 2b? • PROFET BTS 430 K2 Smart Highside Power Switch Product Summary Features • Clamp of negative voltage at output 50 Vbb- Vout Avalanche Clamp • Short-circuit protection Vbb operation 4 .5 . . 32 • Current limitation -32


    OCR Scan     		PDF fl235L05 TQ-220 BTS430K2 E3043 Q67060-S6200-A2 BTS430K2 E3043 Q67060-S6200-A3 O-220

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906


    OCR Scan     		PDF Q62702-Z2030 OT-223 EHN00057 A235bG5 122M7C

    s43a

    Abstract: No abstract text available
    Text: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328020G D-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)


    OCR Scan     		PDF 328020G D-50/-60 32-bit flS35b05 B235bG5 00flS452 fl23Sb0S s43a

    siemens FLH

    Abstract: 514400 514400J-10 514400J-80 514400J
    Text: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80


    OCR Scan     		PDF 023SbOS siemens FLH 514400 514400J-10 514400J-80 514400J

    MC801

    Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
    Text: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing


    OCR Scan     		PDF SAB-C502 SAB-C502-2R 15-bit P-DIP-40 P-LCC-44 SAB-C502 SAF-C502 SAB-C502-L C502-2R SAB-C501 MC801 SAB-502-2R RC2H C5022 sab-502 TCON application 80C52

    BFQ 58

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F659 OT-23 fi23SbDS BFQ 58

    CFW450

    Abstract: S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI
    Text: FS: 1 1 /9 2 P a g e A.1 S IE M E N S A G p r e lim in a r y D A T A -S H E E T TUA 4300 Tab le of C o n te n ts ONE CHIP CAR RADIO Differences to th e last edition Page O.b Table o f Contents Page A. 1 Functional Description, A pplication Page B.2 . B.3


    OCR Scan     		PDF V66047-S695-A100-Z1 fl23SbOS DD6D723 V66047-S695-A30Q-V1_ CFW450 S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI

    cc 3025 diode

    Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
    Text: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated


    OCR Scan     		PDF BUZ110S BUZ110S P-T0220-3-1 Q67040-S4005-A2 E3045A P-TC263-3-2 Q67040-S4005-A6 E3045 cc 3025 diode 5T4 tube MC 140 transistor 8235 smd transistor h7 transistor smd marking CODE Wb transistor marking smd 7c

    buz 90 af

    Abstract: No abstract text available
    Text: flÖD D • ö 2 3 SbGS 88D OOlSOflb 4 « S I E G 15086 D 7 ~ ' 3 <? - / 3 BUZ 381 SIEMENS AKTIENGESELLSCHAF N-Channel Main ratings VBt - 1000 V Draln-source voltage /„ -4 ,9 A Continuous drain current Draln-source on-resistance DS on ■ 2,6 £2 Description


    OCR Scan     		PDF 100KiS 23SbOS Q01SGT1 buz 90 af

    T60403-L4021

    Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
    Text: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input


    OCR Scan     		PDF fl23SbOS PE-68975* PE-64995 PE-65495 PE-65795 PE-68995 B78384-A1060-A2* B78384-P1111-A2 T60403-L4025-X021* T60403-L4097-X011* T60403-L4021 function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 8M X 36-Bit EDO-DRAM Module HYM 368025S/GS-50/-60 Advanced Inform ation • SIMM m odule with 8 388 608 words by 36-bit organization for PC main m em ory applications • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version


    OCR Scan     		PDF 36-Bit 368025S/GS-50/-60

    Untitled

    Abstract: No abstract text available
    Text: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619


    OCR Scan     		PDF BSS89 Q62702-S519 Q62702-S619 Q62702-S385 E6288 E6296

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive devicé, observe handling precautions! Type Marking Q62702-A1103 1=A Package o Pin Configuration


    OCR Scan     		PDF 4-03W 12GHz Q62702-A1103 OD-323 4-03W flS35b05 fi235b05 D12D32Ã

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BB 914 S ilico n V ariab le C a p a c ita n c e D iode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve


    OCR Scan     		PDF Q62702-B673 OT-23 flS35b05

    transistor BD 680

    Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
    Text: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors


    OCR Scan     		PDF 0235bQ5 T-33-31 676/BD BD676, BD678 BD680 BO676, BD678, transistor BD 680 bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243

    BDY13

    Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
    Text: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


    OCR Scan     		PDF Q62702-D378 Q62702-D378-V4 Q6270 BDY13 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12