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    FLM252 Price and Stock

    Mini-Circuits ZFLM-252-1WL-S+

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    DigiKey ZFLM-252-1WL-S+ Bulk 1
    • 1 $78.85
    • 10 $72.78
    • 100 $71.2624
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    Mouser Electronics ZFLM-252-1WL-S+
    • 1 $78.85
    • 10 $72.78
    • 100 $68.42
    • 1000 $68.42
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    FLM252 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLM2527L-20F Fujitsu FET, P Channel, ID 13.5 A Original PDF

    FLM252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fujitsu x band amplifiers

    Abstract: No abstract text available
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F FCSI0499M200 fujitsu x band amplifiers

    Untitled

    Abstract: No abstract text available
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package


    Original     		PDF FLM2527L-20F 50ohm FLM2527L-20F 25deg

    FLM2527L-20F

    Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers

    fujitsu x band amplifiers

    Abstract: FLM2527L-20F
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F FCSI0499M200 fujitsu x band amplifiers

    Eudyna Devices X BAND power amplifiers

    Abstract: FLM2527L-20F
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices X BAND power amplifiers

    FLM5359-8C

    Abstract: FUJITSU MICROWAVE
    Text: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)


    OCR Scan     		PDF FLM2527L-20 FLM3742-4C FLM3742-8C FLM4450-4C FLM4450-8C FLM5359-4C FLM5359-8C FUJITSU MICROWAVE

    LM2527

    Abstract: SO 042
    Text: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature


    OCR Scan     		PDF FLM252 7L-20 So006 30dBrn 25dBrn 20dBrn LM2527 SO 042

    fujitsu x band amplifiers

    Abstract: No abstract text available
    Text: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		PDF FLM2527L-20 FLM2527L-20 fujitsu x band amplifiers

    Untitled

    Abstract: No abstract text available
    Text: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz


    OCR Scan     		PDF FLM2527L-20F FLM2527L-20F FCSI0499M200

    Untitled

    Abstract: No abstract text available
    Text: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM2527L-20 FLM2527L-20

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF