Transistor 2SC 2166
Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Text: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.
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aE35b05
BSV65
Transistor 2SC 2166
transistor IR 652 P
2166 1j1
bsv 81
X12X15
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fn521
Abstract: 24C164 Q67100-H3232 Q67100-H3500 Q67100-H3501 Q67100-H3505 Q67100-H3506
Text: Û235b05 OCHÖTIÖ 553 S IE M E N S 16 K bit 2048 x 8 bit Serial C M O S E E P R O M s, I 2C S yn ch ro no u s 2-W ire Bus S L x 24C 164 Preliminary Features > Data EEPROM internally organized as 2048 bytes and 128 pages x 16 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation
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235b05
24C164
23SbD5
fn521
24C164
Q67100-H3232
Q67100-H3500
Q67100-H3501
Q67100-H3505
Q67100-H3506
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d1117
Abstract: AES02079 AEB02072
Text: S IEM EN S TrilithIC BTS 771 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Rds on @ 25 °C: High-side switch: typ. 85 mQ,
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H35bD5
P-DSO-28-9
gps05123
E35b05
d1117
AES02079
AEB02072
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Untitled
Abstract: No abstract text available
Text: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width
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P-LCC-28-R
EJ06touÂ
N025IAI
GPL05018
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page
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24C08/16
A23SbD5
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TRANSISTOR SMD MARKING CODE XI
Abstract: No abstract text available
Text: • 0235bOS OD^bbOl 422 SIEMENS 5-V L ow -D rop Fixed V oltage R egulator T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection
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0235bOS
Q67000-A9190
Q67006-A9173
Q67006-A9288
P-DSO-14-4
-20-G
Q67006-A9192
235bOS
TRANSISTOR SMD MARKING CODE XI
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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SDA9060
Abstract: No abstract text available
Text: SIEMENS AKTIENG ESE LLSCHAF S1E ]> • fl23SbüS OOMMMbO Ô13 H S I E 6 SIEMENS 'T'52W7 Video D/A Processor SDA 9060 Preliminary Data MOS 1C Type Ordering code Package SDA 9060 Q 67100 -H 8381 P-D IP-28 Description of Functions and Applications In conjunction with the DM SD Digital M ulti-Standard Decoder and the RGB signal pro
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fl23Sb
IP-28
004446E
Ae35b05
P-DIP-28
SDA9060
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18P06P
Abstract: Q67040-S4189
Text: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage
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18P06P
SPD18P06P
P-T0252
Q67040-S4189
SPU18P06P
P-T0251
Q67040-S4192
G133L
18P06P
Q67040-S4189
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AEB02072
Abstract: AES02079 GPS05123
Text: SIEM EN S TrilithlC BTS 770 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDSou @ 25 °C: High-side switch: typ.165 mQ,
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P-DSO-28-9
P-DSO-28-9
-TO2128X
35x45Â
GPS05123
AEB02072
AES02079
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Untitled
Abstract: No abstract text available
Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized for ECC applications
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72-Bit
72V1620GS-50/-60
72V1630GS-50/-60
fl23Sb05
72V1620/30GS-50/-60
72-ECC
0235b05
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit
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O-220
C67078-S1343-A2
8235bD5
0235bQ5
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siemens rs 1016
Abstract: 012E3
Text: SIEMENS CGY 120 GaAs MMIC • • • • • • • Monolithic microwave IC MMIC-Amplifier for mobile communication Variable gain amplifier for GSM/PCN applications Gain Control range over 50dB 50Q input and output matched Low power consumption Operating voltage range: 2.7 to 6 V
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Q62702-G44
235LD5
fl235b05
siemens rs 1016
012E3
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Untitled
Abstract: No abstract text available
Text: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings
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6060XS,
6060G
V66047-S0894-A100-V3-76D4
fl235bDS
A535bQ5
D137L11
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation
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Q62702-C2486
OT-363
as35b05
D15DLSB
E35bD5
01EDbS4
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
G67078-S1301
AE35b05
fl235bCIS
00fl4030
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Untitled
Abstract: No abstract text available
Text: ICs for Communications Synchronous Digital Hierarchy Transceiver SDHT PXB 4240 Version 1.2 Preliminary Data Sheet 10.96 T4240-X V 12- • fiEBSbDS 0Cnfl737 343 ■ -7600 \ Edition 10.96 This edition was realized using the software system FrameMaker . Published by Siemens AG,
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T4240-X
0Cnfl737
155-M
fl235fc
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Untitled
Abstract: No abstract text available
Text: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß
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08P06P
SPD08P06P
P-T0252
Q67040-S4153-A2
P-T0251-3-1
SPU08P06P
67040-S4154-A2
235b05
G133S60
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zo 103 ma
Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
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vce05181
Q62702-F1104
A23Sb05
DDb71bS
zo 103 ma
transistor ZO 103 MA
siemens OF IC 741
SS 424 02 31
zo 103 ma 75 750
MARKING CODE F5T
BFQ 51
ZO 103 NA
BFQ73S
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BTS 177
Abstract: BTS 304
Text: SIEMENS BTS 542 D PRÜFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection
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T0218AB/5
a235bQ5
200ns
fl235bDS
D05463G
BTS 177
BTS 304
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83C517A
Abstract: PI7Z sab80c517
Text: LOE D • fl235bD5 G0M7CIÔ4 533 SIEMENS SIEG SIEMENS AKTIENGESELLSCH 7 High-Performance 8-Bit CMOS Single-Chip Microcontroller -^ ? -/? -¿ > 7 SAB 80C517A / 83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM
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fl235bD5
83C517A-5
80C517A
80C517A
83C517A-5
10-bit
80C515,
80C517,
80C515A
DQ4fl057
83C517A
PI7Z
sab80c517
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B23 zener diode
Abstract: zener Diode B23 BTS710 BTS710L1 BTS711L1 710L1
Text: • fi23SbGS 00^3103 SIEMENS TIR ■ PROFET BTS 710 L1 Smart Four Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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fi23SbGS
BTS710L1
A23SbDS
P-DSO-20-9
BTS710L1
Q67060-S70Q4-A2
TS710L1
fl235fcj05
B23 zener diode
zener Diode B23
BTS710
BTS711L1
710L1
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Untitled
Abstract: No abstract text available
Text: SDA 9288X Revision History: Current Version: 03.96 Previous Version: Page in previous Version Page (in new Version) Subjects (major changes since last revision) 25.1.1994: Preliminary Specification V1.1 22; 23; 24 25.1.1994: warnings 24 25.1.1994: additional bits VSIISQ, VSPISQ at subad. 07/08
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9288X
READ27
P-DSO-32-2
fl235b05
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Untitled
Abstract: No abstract text available
Text: • flEi35L.05 00^2755 115 ■ SIEMENS PROFET BTS432D2 Smart Highside Power Switch Product Summary Features * Load dump and reverse battery protection1 80 VLoad dump * Clamp of negative voltage at output 58 Vbb-VouT Avalanche Clamp * Short-circuit protection
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235bG5
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