Untitled
Abstract: No abstract text available
Text: ôfiD D • 88D fl235bG5 0014^54 0 « S I E Û 14954 D BUZ 231 7 ~ '3 * 7 ~ /3 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance a 1000 V l^ S = 4,9 A k ^OS on) = 2,6 n Go- Description
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fl235bG5
23SbOS
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Untitled
Abstract: No abstract text available
Text: • fl235bG5 OG^OA? T4b ■ SIEMENS PROFET BTS734L1 Smart Two Channel Highside Power Switch Features Product Summary • • • • • Overvoltage Protection Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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fl235b
BS74L
BE35L
0CH310Ã
fl535bO
D0R310I
P-DSQ-20-9
BTS734L1
Q67060-S7009-A2
70fim,
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BSM15GD100D
Abstract: C160 004S7 VM305171
Text: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes
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BSM15GD100D
VM305171
C67076-A2500-A2
235b05
125-C
BSM15GD100D
C160
004S7
VM305171
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A5169
Abstract: BF256 BF256C BF 256 BF256B BF256A
Text: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.
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fl235bG5
8000-A
Q62702-F413
68000-A5169
Q62702-F733
23SbOS
QGQ4472
A5169
BF256
BF256C
BF 256
BF256B
BF256A
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,
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E35bD5
8-/16-Bit
16-bit
16/8-bit
flS35b05
T-52-33-7g
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Untitled
Abstract: No abstract text available
Text: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs - 0.4 to V Am bient temperature under bias Ta O to 70 Storage temperature 7stg - 6 5 to 125
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P-LCC-44-1
fl235b
Db4b01
P-MQFP-64-1
fl235bG5
0Gb4fci02
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82C54-2-P
Abstract: No abstract text available
Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes
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235b05
0G321ff
82C54
82C54
82C54-2
16-bit
82C54-2)
24-pin
P-DIP-24)
82C54-2-P
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U1615
Abstract: No abstract text available
Text: SIEMENS TDA 6612-5 TV-Stereo-Sound Bipolar IC Preliminary Data Features The TDA 6612-5 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled
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Q67000-A5
0235bOS
P-DSO-28-1
023Sb05
U1615
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cn/A/U 237 BG
Abstract: No abstract text available
Text: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication,
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80C517/80C537
80C517
80C537
32-bit
16-bit
80C515
cn/A/U 237 BG
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Q67100-Q2006
Abstract: Q67100-Q982 514100BJ
Text: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e
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36-Bit
364020S/GS-60/-70
18-bit)
S23SbOS
00717B3
Q67100-Q2006
Q67100-Q982
514100BJ
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VOC sensor
Abstract: vbb resistor 45VTYP RXJ Series
Text: Preliminary data SIEMENS BTS 620 TWO CHANNEL PROFET Description PROFET R an intelligent power switch with integrated Two independent high-side switches Overtemperature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection 2
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fi23Sb05
A23SbDS
0G5Mfl73
VOC sensor
vbb resistor
45VTYP
RXJ Series
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3da92
Abstract: No abstract text available
Text: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture
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GDS3414
33-MHz
27-Gbit/s
3da92
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 47E D S IE M E N S • ÖE35bGS DD57D31 b « S I E G PD1165t w VERY BRIGHT GREEN PD1167 HIGH EFFICIENCY RED 1.16" Square 8 x 8 Dot Matrix Programmable Display Module With On Board Drivers, Built-In RAM and Software Controllable Features
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E35bGS
DD57D31
PD1165t
PD1167
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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Untitled
Abstract: No abstract text available
Text: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064
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13N05L
SPD13N05L
P-T0252
Q67040-S4124
SPU13N05L
P-T0251
Q67040-S4116-A2
S35bQ5
Q133777
SQT-89
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T39 diode
Abstract: No abstract text available
Text: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode
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67076-A1004-A2
67076-A1015-A2
A235bQ5
Q020T03
T39 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit
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O-220
C67078-S1314-A2
B235bD5
flS35bD5
QQfl43Al
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 42, PZTA 43 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura ion 1 2 3 4 Package1)
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Q62702-Z2037
Q62702-Z2038
OT-223
100MHz
fl235L
53SLDS
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Untitled
Abstract: No abstract text available
Text: Device Specifications C509-L SIEMENS 11 Device Specifications 11.1 Absolute Maximum Ratings Ambient temperature under bias r A . Storage temperature (7stg) .
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C509-L
fiS35bQ5
P-MQFP-100-2
35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 314171BJ-50/-60/-70 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJL-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Preliminary Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating tem perature
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314171BJ-50/-60/-70
16-Bit
314171BJL-50/-60/-70
16-Bit
314171BJ/BJL-50/-60/-70
16-DRAM
fl235L
0Dfib53D
314171BJ/B
L-50/-60/-70
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SDA30C162
Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
Text: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C163-2 Advanced Data Sheet 05.94 ÖB3SbQ5 0 0 ö0 5b 3 447 • SD A 30C163-2 Revision History: Original Version: 05.94 Previous Releases: Page Subjects changes since last revision
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30C163-2
30C163-2
0/A17
1/A18
A0-A15
ues04736
P35b05
fl23SbOS
SDA30C162
30C162
SDA 30C162
Siemens 3TB
da 218
moy SMD
NB18
30C163
adg smd
NB b6 smd transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type Yds b flDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vt)S Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
bridJJ40
235b05
fl235bG5
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siemens sda
Abstract: SDA 30C162
Text: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update
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fl23Sb05
P-SDIP-52-1
1524H
siemens sda
SDA 30C162
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