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    BSM15GD100D

    Abstract: C160 004S7 VM305171
    Text: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes


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    BSM15GD100D VM305171 C67076-A2500-A2 235b05 125-C BSM15GD100D C160 004S7 VM305171 PDF