Untitled
Abstract: No abstract text available
Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output
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2SA1805
2SC4690
2-16F1A
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2N6260
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers
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2N6260
2N6260
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2SC4029
Abstract: 2SA1553
Text: Inchange Semiconductor Product Specification 2SC4029 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SA1553 APPLICATIONS ・Power amplifier applications ・Recommended for 120W high fidelity audio frequency amplifier output stage
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2SC4029
2SA1553
2SC4029
2SA1553
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10-band graphic equalizer
Abstract: 10-band Graphic Equalizer Amplifier RIAA Ultra low noise amplifier RIAA phono pre-amp lme49720 phono preamp nab
Text: LME49720 LME49720 Dual High Performance, High Fidelity Audio Operational Amplifier Literature Number: SNAS393B LME49720 Dual High Performance, High Fidelity Audio Operational Amplifier General Description RL = 2kΩ 0.00003% typ The LME49720 is part of the ultra-low distortion, low noise,
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LME49720
LME49720
SNAS393B
10-band graphic equalizer
10-band Graphic Equalizer Amplifier
RIAA Ultra low noise amplifier
RIAA phono pre-amp
phono preamp nab
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TPA152
Abstract: TPA152D TPA152DG4 TPA152DR TPA152DRG4 TPA302 5.1 audio power amplifier
Text: TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 D D D D D D D D D PACKAGE TOP VIEW High-Fidelity Line-Out/HP Driver 75-mW Stereo Output PC Power Supply Compatible Pop Reduction Circuitry Internal Mid-Rail Generation
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TPA152
75-mW
SLOS210A
TPA302
TPA152
TPA152D
TPA152DG4
TPA152DR
TPA152DRG4
TPA302
5.1 audio power amplifier
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2SB697
Abstract: 2SB697K
Text: JMnic Product Specification 2SB697 2SB697K Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD733/733K ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage
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2SB697
2SB697K
2SD733/733K
2SB697
2SB697K
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2SA1803
Abstract: 2SC4688
Text: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2
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2SA1803
2SC4688
2SA1803
2SC4688
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CA3089E
Abstract: doubletuned quadrature coil ca3089 Murata SFG Waller 4SN3FIC murata 10.7MA murata 10.7MA ceramic filter murata filter 10.7ma CA3089M1 EX22741
Text: CA3089 UCT NT PROD E T E CEME L OBSO DED REPLA MEN E CO M Data Sheet October 2002 NO R FM IF System FN0561.4 Features Description • For FM IF Amplifier Applications in High-Fidelity, Automotive, and Communications Receivers . Intersil CA3089 is a monolithic integrated circuit that provides all the functions of a comprehensive FM-IF system.
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CA3089
FN0561
CA3089
CA3089E
doubletuned quadrature coil
Murata SFG
Waller 4SN3FIC
murata 10.7MA
murata 10.7MA ceramic filter
murata filter 10.7ma
CA3089M1
EX22741
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2N6253
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2N6253 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Wide safe operating area ・High dissipation capability APPLICATIONS ・Series and shunt regulators ・High fidelity amplifiers
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2N6253
2N6253
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2SB596
Abstract: 2SD526 2SD52
Text: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage
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2SB596
O-220C
2SD526
2SB596
2SD526
2SD52
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2SA1986
Abstract: 2SC5358
Text: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage
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2SA1986
2SC5358
-230V;
2SA1986
2SC5358
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2SA1804
Abstract: TO3PFM 2SC4689 Jmnic
Text: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2
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2SA1804
2SC4689
-120V
2SA1804
TO3PFM
2SC4689
Jmnic
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2SB556
Abstract: 2SB555
Text: JMnic Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD425/426 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage
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2SB555
2SB556
2SD425/426
2SB555
-10mA
2SB556
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2SA1302
Abstract: Toshiba 2Sa1302
Text: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL
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2SA1302
2SC3281
2-21F1A
2SA1302
Toshiba 2Sa1302
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2SA1301 TOSHIBA
Abstract: No abstract text available
Text: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C
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2SA1301
2SC3280
2-21F1A
--160V,
--50mA,
2SA1301 TOSHIBA
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2SC5242
Abstract: No abstract text available
Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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2SC5242
2SA1962
2-16C1A
2SC5242
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100w audio amplifier
Abstract: No abstract text available
Text: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)
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2SB1429
2SD2155
100w audio amplifier
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2SB863
Abstract: 2SD1148
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL
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2SB863
2SD1148
-140V,
-50mA,
2SB863
2SD1148
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TMS3478
Abstract: tms4256
Text: REV * * * As Of APR/01/1990 T M S 3 4 7 8 SINGLE CHIP VOICE RECORDER/PLAYER - 28 PIN Y-SHRINK 400 MIL Dual In-line Package - CMOS Si-GATE PROCESS - SINGLE +5V POWER SUPPLY 6 FULL DIGITAL CVSD WITH HIGH FIDELITY - THREE POINTS BASE DATA SAMPLING CLOCK SELECTION (16K,32K and 64KHz)
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APR/01/1990
64KHz)
10BIT
64KHz
TMS4256
TMS4C1024
TMS3478
TMS3478
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tr 2sc5200
Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Text: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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2SC5200
2SA1943
2-21F1A
tr 2sc5200
power amplifier 2sc5200 2sa1943 TRANSISTOR
TRANSISTOR 2SC5200
tr 2SA1943
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2SA1301
Abstract: 2SC3280 2SA1301
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1301 POWER AMPLIFIER APPLICATIONS. Unit in mm 2 & 5 MAX. iZS3.3±aZ FEATURES: . Complementary to 2SC3280 . Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C SYMBOL RATING Collector-Base Voltage
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2SA1301
2SC3280
-50mA,
2SA1301
2SC3280 2SA1301
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2SD525
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio
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2SD525
2SB595.
2SD525
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2SA1941
Abstract: 2SC5198
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SC5198
2SA1941
2SC5198
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2SB1016
Abstract: 1C13MAX
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency
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2SB1016
1C13MAX.
-100V
2SD1407
Q76-CU5
-50mA,
2SB1016
1C13MAX
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