MO-235
Abstract: PSMN4R0-30YL
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
MO-235
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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PSMN4R0-30YL
Abstract: No abstract text available
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
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md012a
Abstract: MA03-2 transorb MD001A MA032 MA04-2 ipos korea MA011 MCP18480 MD001
Text: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting
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MCP18480
MCP18480
DK-2750
D-85737
DS20091B-page
md012a
MA03-2
transorb
MD001A
MA032
MA04-2
ipos korea
MA011
MD001
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Untitled
Abstract: No abstract text available
Text: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting
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MCP18480
MCP18480
DK-2750
D-85737
DS20091B-page
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IRF FET
Abstract: FET MARKING QG MOSFET LOSSES SYNC BUCK fet data book free download 10BQ040 EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503
Text: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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5095A
IRLR8503PbF
IRLR8503
combi318
EIA-481
EIA-541.
EIA-481.
IRF FET
FET MARKING QG
MOSFET LOSSES SYNC BUCK
fet data book free download
10BQ040
EIA-541
IRFR120
IRFU120
IRLR8103V
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P916A
Abstract: FET marking code FET MARKING QG
Text: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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IRLR8503PbF
IRLR8503PbF
IRLR8503
EIA-481
EIA-541.
EIA-481.
P916A
FET marking code
FET MARKING QG
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10BQ040
Abstract: EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503 RLR8503 fet dpak FET marking code
Text: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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5095A
IRLR8503PbF
IRLR8503
combi19
EIA-481
EIA-541.
EIA-481.
10BQ040
EIA-541
IRFR120
IRFU120
IRLR8103V
RLR8503
fet dpak
FET marking code
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FET MARKING CODE
Abstract: IRF FET 10BQ040 EIA-541 IRFR120 IRLR8103V IRLR8503 FET MARKING QG Junction P FET High Current Low Side Switch
Text: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description
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PD-93839C
IRLR8503
IRLR8503
immu318
EIA-481
EIA-541.
EIA-481.
FET MARKING CODE
IRF FET
10BQ040
EIA-541
IRFR120
IRLR8103V
FET MARKING QG
Junction P FET
High Current Low Side Switch
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10BQ040
Abstract: EIA-541 IRFR120 IRLR8103V IRLR8503
Text: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description
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PD-93839C
IRLR8503
IRLR8503
immu19
EIA-481
EIA-541.
EIA-481.
10BQ040
EIA-541
IRFR120
IRLR8103V
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se 617
Abstract: ALPHA INDUSTRIES
Text: Outline Drawings SOIC and PLCC Packaging for GaAs MMIC and FET Products -1 2 -2 5 -2 4 -3 2 D im en sio ns are sp e cifie d in in che s and m illim e te r d im e n sio n s are in p a re n the ses u nle ss o th e rw ise noted. 1. T h e p acka ge o utlin e s p ro vide d in th is se ction a re the m o st cu rre nt at the tim e o f pub lica tio n. If you c a n ’t locate a p acka ge o utline p lease co n su lt th e factory.
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03Alpha
se 617
ALPHA INDUSTRIES
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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D15N06V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC SEM 2105
Abstract: No abstract text available
Text: Fast, Precise 5-Bit Synchronous Buck Controller for the Next Generation Low Voltage Pentium II Processors Features Description The CS5165 synchronous 5-bit NFET buck controller is optim ized to manage the pow er of the next generation Pentium®II processors. It's V2 control
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CS5165
100ns)
MS-013
CS5165GDW16
CS5165GDWR16
IC SEM 2105
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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b72L
Abstract: IFM D100 M2116 OCM206 OCM216 OCM217 OCM226 OCM227 OCM246 OCM247
Text: O K I electronic com ponents OCM 2X 6, 2X 7 SER IES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2X6 and OCM2X7 Series are bidirectionsl AC optical MOS relays that are low er in cost than the OCM2XO/2X1 Series. The input portion is a GaAs infrared light emitting diode. The output
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10-mA
0CM246/247
b724240
L724240
b72L
IFM D100
M2116
OCM206
OCM216
OCM217
OCM226
OCM227
OCM246
OCM247
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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K545
Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Text: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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D03077G
BUK545-200A/B
PINNING-SOT186
BUK545
-200A
-200B
K545
NDS 40-30
BUK545-200A
BUK545-200B
cf rh transistor
4428A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband com mercial and m ilitary applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141
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Untitled
Abstract: No abstract text available
Text: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q
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FLM5972-8F
-45dBc
FLM5972-8F
FCSI0599M200
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fujitsu gaas fet
Abstract: FLC107WG
Text: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
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FLC107WG
FLC107WG
FCSI0598M200
fujitsu gaas fet
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