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    FET N BS170 Search Results

    FET N BS170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy

    FET N BS170 Datasheets Context Search

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    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL Dr ai n-Sou rce Vo l t ag e V DS VALUE UNIT 60


    Original     		PDF BS170F 60Volt ZVN3306F

    BS170 MOTOROLA

    Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
    Text: MOTOROLA Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


    Original     		PDF BS170/D BS170 226AA) BS170 MOTOROLA us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola

    BS170F

    Abstract: ZVN3306F MV SOT23
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω S D G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current


    Original     		PDF BS170F 60Volt 200mA 600mA ZVN3306F BS170F MV SOT23

    MV SOT23

    Abstract: BS170F ZVN3306F
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C


    Original     		PDF BS170F 60Volt MV SOT23 BS170F ZVN3306F

    MV SOT23

    Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C


    Original     		PDF BS170F 60Volt 200mA 600mA ZVN3306F MV SOT23 BS170F mv BS170F DSS SOT23 DSA003678

    BS170P

    Abstract: fet to92 ZVN3306A equivalent of BS170P DSA0037520 DSA003752
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C


    Original     		PDF BS170P ZVN3306A 200mA DD15V, 600mA BS170P fet to92 equivalent of BS170P DSA0037520 DSA003752

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    fet n BS170

    Abstract: No abstract text available
    Text: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V


    OCR Scan     		PDF BS170 fet n BS170

    pin diagram of bs170

    Abstract: bs170 TO-92 TO 92 BS170
    Text: TELEDYNE COMPONENTS ôcil7bOE 00077^^ 5 • TSC 3bE D T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Reliable,low cost, plastic package European TO -92 pin-out Low capacitance


    OCR Scan     		PDF BS170 pin diagram of bs170 bs170 TO-92 TO 92 BS170

    BS170 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS17Q/D SEMICONDUCTOR TECHNICAL DATA TM OS FET S w itching N -C h a n n e l — E nhancem en t 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |xs


    OCR Scan     		PDF BS17Q/D BS170/D BS170 MOTOROLA

    BS170P

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C


    OCR Scan     		PDF BS170P ZVN3306A cH7Q57Ã 001G35S BS170P

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching N -Channel — Enhancement BS170 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rce Voltage G ate-S ource Voltage — Continuous — Non-repetitive tp < 50 pis Drain CurrentO) Total Device Dissipation @ Ta = 25“C


    OCR Scan     		PDF BS170 O-226AA)

    BS170A

    Abstract: EI5D
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ^5 SEM ICO ND/ D ISCR ETE D eT | 7 H 5 0 5 3 3 00PSS17 ' 95D 05517 D 35-25 N-channel enhancem ent mode vertical D M O S FET BS170 FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		PDF 00PSS17 BS170 BS170F 7E20533 7EEGS33 000S5E3 22DS33 BS170A EI5D

    transistor MOSFET BS170

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR 60 VO LTS This TM O S FET is d esig ne d fo r h ig h -vo lta g e , h igh-speed s w itc h ­ ing a p p lica tio n s such as line d rive rs, relay d rive rs, CMOS logic,


    OCR Scan     		PDF BS170 transistor MOSFET BS170

    BS170

    Abstract: bs 170
    Text: BS170* CASE 29-04, STYLE 30 TO-92 TO-226AA 1 Drain MAXIMUM RATINGS Rating Sym bol V a lue U n it Vd s 60 Vdc Vg S V GSM ±20 ±40 Vdc Vpk Id 0.5 Ado Pd 350 mW TJ> T stg - 5 5 to + 1 5 0 *C D rain-S ource V o ltage G ate-S ource V oltage — C o ntin u o u s


    OCR Scan     		PDF BS170* O-226AA) BS170 bs 170

    16V8Q

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE 7 220zjj KLESSEY SE MI CO ND/DISCRETE □3 DiF 7 5 S D S 3 3 03E 06 7 2 0 D T - IVI-channel enhancement mode vertical D M O S FET BS170F L S ' * A B S O L U T E M A X I M U M R A T IN G S Parameter Sym b o l Drain-source voltage


    OCR Scan     		PDF 220zjj BS170F 7220S33 72aOS33 000tj 16V8Q

    BS170 MOTOROLA

    Abstract: T0226 S-60
    Text: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC


    OCR Scan     		PDF BS170* T0-226AA) BS170 BS170 MOTOROLA T0226 S-60

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


    OCR Scan     		PDF TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BS107 spice

    Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
    Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT


    OCR Scan     		PDF PHB87N03LT PHP87N03LT PHB69N03LT PHD69N03LT PHP69N03LT PHB55N03LT PHD55N03LT PHP55N03LT PHB50N03LT PHP50N03LT BS107 spice BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 bsh201 SFE 7.2 k75-10