BUK761R7-40E
Abstract: No abstract text available
Text: D2 PA K BUK761R7-40E N-channel TrenchMOS standard level FET 4 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK761R7-40E
OT404A
BUK761R7-40E
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sc1482
Abstract: SC1114 pentium 4 northwood SC2614 SC1311 Chipset SIS 630e SC2432 MOSFET VRM SC1155 sc2643
Text: Power Management D E S K T O P Worldwide Sales Offices CORPORATE HEADQUARTERS 200 Flynn Road Camarillo, California 93012 Tel: 805 498-2111 Fax: (805) 498-3804 SAN JOSE OFFICE 1111 Comstock Street Santa Clara, California 95054 Tel: (408) 727-6562 Fax: (408) 986-9059
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RS232
MSOP-10
MLP-18
sc1482
SC1114
pentium 4 northwood
SC2614
SC1311
Chipset SIS 630e
SC2432
MOSFET VRM
SC1155
sc2643
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Untitled
Abstract: No abstract text available
Text: Ihr Spezialist für Mess- und Prüfgeräte Keysight Technologies 34980A Multifunction Switch/Measure Unit Data Sheet dataTec ▪ Ferdinand-Lassalle-Str. 52 ▪ 72770 Reutlingen ▪ Tel. 07121 / 51 50 50 ▪ Fax 07121 / 51 50 10 ▪ info@datatec.de ▪ www.datatec.de
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4980A
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Untitled
Abstract: No abstract text available
Text: b2 fl2 1 DDlöDbB ÔÔ4 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 39V 4045 1 4 .0 —1 4 .5GHz BAND 8 W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched GaAs power FE T especially designed for use in 1 4 .0 — 14.5
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39v4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 39V 4045 14.0 ~ 14.5GHz B A N D 8 W IN T E R N A LLY M A TCH D G aA s FET Son»a P DESCRIPTION OUTLINE DRAW ING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched G aA s power F E T especially designed for use in 1 4 . 0 - 14.5
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ATF-45100
Abstract: AVANTEK transistor
Text: A V A N T E K INC SDE D • ^ A V A N-mTm E K ^ llHllfab G O O b S T l 7 ATF-45100 AT-8151 2.-|2 GHz Medium Power Gallium Arsenide FET T-3l-2.£ Avantek Chip Outline Features • • • High Output Power: 29.0 dBm typical Pi <ib at 4 GHz High Gain at 1 dB Compression:
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ATF-45100
AT-8151)
ATF-45100
AVANTEK transistor
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avantek
Abstract: J539 ATF-13336 ATF-13336-STR ATF-13336-TR1 AVANTEK source AVANTEK transistor
Text: AV A N T E K INC 2GE D 0A V A N T E K • DaObSSE Ô ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET Features • • • • • Avantek 36 mlcro-X Package1 Low Noise Figure: 1.4 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB
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ATF-13336
ATF-13336
avantek
J539
ATF-13336-STR
ATF-13336-TR1
AVANTEK source
AVANTEK transistor
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AVANTEK
Abstract: No abstract text available
Text: a v a n te k in c D | O avantek u m e tti oogIdQsm s I îæ«.«* Internally Matched Power GaAs FET Avantek IMFET Package Features • • • • • • 7.1-7.8 GHz Minimum Bandwidth Internally Matched Input/Output Impedance High Output Power High Gain
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IM-7178-3
AVANTEK
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Avantek S
Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323
Text: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB
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ATF-13736
CA95C54
Avantek S
Avantek, Inc
AVANTEK transistor
ATF13736TR1
Avantek atf-1323
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AT12570-5
Abstract: AVANTEK s atf255 AVANTEK oscillator
Text: EGE D AVANTEK INC ^A V A N TE K im n tb GG0bS7Q T ATF-25570 AT-12570-5 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 70 mil Package Features • High Output Power: 20.5 dBm typical Pi dB at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz
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ATF-25570
AT-12570-5)
ATF-25570
310-371-Q717or310-371
AT12570-5
AVANTEK s
atf255
AVANTEK oscillator
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im7984-3
Abstract: IM-7984-3 Avantek, Inc
Text: □ fc,E D I AVANTEK INC IM-7984-3 3 Watt, 7.9-8.4 GHz Internally Matched Power GaAs FET 0A V A N T E K Features • • • • • • GÜQbOEb «1 | T-39-05 Avantek IMFET Package T.9-8.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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IM-7984-3
T-39-05
im7984-3
Avantek, Inc
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IM3742-3
Abstract: im37 Avantek, Inc
Text: AVANTEK INC Q a v Ot»E D | a n t e OGGbOlM 2 | k T- 39 - 05 3 & 6 Watt, 3.7-4.2 GHz Internally Matched Power GaAs FET Avantek IMFET™ Package Features • • • • • • lim itâ t 3.7-4.2 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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IM-3742-3/-6
IM3742-3
IM-3742-3
IM-3742-6
im37
Avantek, Inc
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Untitled
Abstract: No abstract text available
Text: ¥ho% mL'fíMPHEWLETT a c k a rd ATF-13284 1-16 GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB at 4 GHz
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ATF-13284
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AT82
Abstract: AVANTEK transistor
Text: AVA N T E K INC SOE D O avantek ATF-25100 AT-8251 0.5-10 GHz Lòw Noise Gallium Arsenide FET 'T-'M-zs Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB
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ATF-25100
AT-8251)
ATF-25100
AT82
AVANTEK transistor
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gaas fet micro-X Package
Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Text: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz
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114nbh
Q00b503
ATF-26836
ATF-26836
pe093
CA95054
gaas fet micro-X Package
ATF-26836-STR
ATF-26836-TR1
GaAs FET Micro-X
AVANTEK transistor
AVANTEK oscillator
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AVANTEK transistor
Abstract: No abstract text available
Text: A V A N T E K INC 20E D • HMlTbb ODGbSfl? S ■ ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET T-3I-2S Avantek Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi da at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz
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ATF-44100
AT-8141)
AVANTEK transistor
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AT8150
Abstract: AT-8150 M/AT8150
Text: AV A N T E K INC 20E D • UHllbt 000^5=13 Q ATF-45101 AT-8150 2-8 GHz Medium Power Gallium Arsenide FET T -3 1 -7 .5 Avantek 100 mil Flange Package Features • High Output Power: 29.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression: 10.0 dB typical Gi dB at 4 GHz
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ATF-45101
AT-8150)
ATF-45101
AT8150
AT-8150
M/AT8150
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AT-8140
Abstract: AVANTEK transistor
Text: AVANTEK GOObSfli =1 • INC 0A Y A N T E K ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET ■ Tv2>l-'2-5 Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz
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ATF-44101
AT-8140)
F-44101
AT-8140
AVANTEK transistor
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AVANTEK transistor
Abstract: ATF-13136-TR1
Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB
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0GQb54b
ATF-13136
AVANTEK transistor
ATF-13136-TR1
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PDF
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AT-8140
Abstract: ATF-44101 Avantek S AVANTEK transistor AT8140
Text: HOE D A V A N T E K INC AVAN TEK Hi l i m i t h QOGbSô'î ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET • ' ' ^ T~-3>l-2 S Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression:
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ATF-44101
AT-8140)
ATF-44101
AT-8140
Avantek S
AVANTEK transistor
AT8140
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PDF
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AT-10650-3
Abstract: AT10650-3 ATF-26350 AVANTEK transistor
Text: A V A N T E K INC SOE D • Q a v a n tek 1141*1bb O Q O b S T T b ■ ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET T -3 \-Z $ Avantek 50 mil Package Features • • • • Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz
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ATF-26350
AT-10650-3)
ATF-26350
AT-10650-3
AT10650-3
AVANTEK transistor
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vdr10
Abstract: No abstract text available
Text: POWEREX m u BTE INC B s D TSTMbSl GÜÜMSbñ 7 I PRX JQ224510/JQ225010 JR224510/JR225010 x Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Single Chopper
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JQ224510/JQ225010
JR224510/JR225010
Amperes/450-500
BP107,
JQ224510,
JQ225010,
JR224510,
JR225010
0DD4S73
vdr10
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PDF
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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PDF
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JD224505
Abstract: JD224505S
Text: POWEREX f O M INC C 3T E R S I> WÊ TS'iMbEl 0D0451fi 3 « P R X T JD224505S Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 75697 41 2 9 25-7272 Dual FETMOD Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 4 1 .14.14
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0D0451fi
JD224505S
BP107,
Amperes/450
T-39-27
peres/450
JD224505
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