FE42-0001
Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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50IDSS
12/18GHz
25IDSS
25GHz
300um
FE42-0001
SVC6310
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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fet amplifier schematic
Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application
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XC1900E-03
AV01-0258EN
fet amplifier schematic
high end amplifier schematics
TL74
of 3842
c cor hybrid amplifier modules
MITSUBISHI Microwave
TL71
high power fet amplifier schematic
TL78
mitsubishi gaAs 1998
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fet ft 20 GHZ
Abstract: SMG50 fet probe service manual
Text: 1.5 GHz Active Probe TAP1500 Data Sheet Easy to Use Connects Directly to DPO7000 and DPO/MSO4000 Series Oscilloscopes Using the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe
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TAP1500
DPO7000
DPO/MSO4000
1W-19043-2
fet ft 20 GHZ
SMG50
fet probe service manual
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Prospects for a BiCFET III-V HBT Process
Abstract: kopin
Text: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we
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40-Gbit/s-class
Prospects for a BiCFET III-V HBT Process
kopin
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Untitled
Abstract: No abstract text available
Text: 1.5 GHz Active Probe TAP1500 Datasheet Easy to Use Connects Directly to Oscilloscopes with the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe Status/Diagnostic Information, and to Control Probe DC Offset
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TAP1500
1W-19043-5
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HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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LNA ku-band
Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)
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11a/b/g)
5988-9866EN
LNA ku-band
ku-band pll lnb
AT-64020
microwave transmitter 10GHz
MGA-725M4
micro-X ceramic Package lna fet
gaas fet 70 mil micro-X Package
HSMS-2850
HSCH-9401
900-1700MHz
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AWS01
Abstract: aft-186
Text: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer
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fet ft 25 GHZ
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description
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AT001D4-31
AT001D4-31
fet ft 25 GHZ
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic
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38V2228
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fet ft 25 GHZ
Abstract: fet ft 30 GHZ
Text: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package
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AS006M1-93
AS006M1-93
SN6337
3/99A
fet ft 25 GHZ
fet ft 30 GHZ
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GRH111
Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122Ã
MGFS52BN2122A
17GHz
GF-49
14GHz
GR708â
GR40-1000
GRH111
GRH111-0
GRH111-27
GRH111-1
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description
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AT001D3--1
MIL-STD-883
AT001D3-11
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siemens gaas fet
Abstract: TMS 1600 marking S221
Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
siemens gaas fet
TMS 1600
marking S221
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JS8892-AS
Abstract: k-band amplifier fet ft 30 GHZ
Text: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GidB= 6*5 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM
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JS8892-AS
23GHz
T-153
JS8892-AS
k-band amplifier
fet ft 30 GHZ
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AVANTEK transistor
Abstract: ATF-13136-TR1
Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB
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0GQb54b
ATF-13136
AVANTEK transistor
ATF-13136-TR1
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Untitled
Abstract: No abstract text available
Text: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib
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ATF-13170
ATF-13170
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MWT1171HP
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD
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MwT-11
MwT-11
MWT1171HP
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ATF-26100
Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
Text: ¥hn% ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET H E W LE T T ft "HÆ PACKARD Features • • • Chip Outline Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB
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ATF-26100
AT-10600)
ATF-26100
2-18 GHz Low Noise Gallium Arsenide FET
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Untitled
Abstract: No abstract text available
Text: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
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Untitled
Abstract: No abstract text available
Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
CFK2062-P3
0000b74
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