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    FET FT 30 GHZ Search Results

    FET FT 30 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET FT 30 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FE42-0001

    Abstract: SVC6310
    Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging


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    50IDSS 12/18GHz 25IDSS 25GHz 300um FE42-0001 SVC6310 PDF

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet PDF

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ PDF

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


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    ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015 PDF

    fet amplifier schematic

    Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
    Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application


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    XC1900E-03 AV01-0258EN fet amplifier schematic high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998 PDF

    fet ft 20 GHZ

    Abstract: SMG50 fet probe service manual
    Text: 1.5 GHz Active Probe TAP1500 Data Sheet Easy to Use Connects Directly to DPO7000 and DPO/MSO4000 Series Oscilloscopes Using the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe


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    TAP1500 DPO7000 DPO/MSO4000 1W-19043-2 fet ft 20 GHZ SMG50 fet probe service manual PDF

    Prospects for a BiCFET III-V HBT Process

    Abstract: kopin
    Text: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we


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    40-Gbit/s-class Prospects for a BiCFET III-V HBT Process kopin PDF

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    Abstract: No abstract text available
    Text: 1.5 GHz Active Probe TAP1500 Datasheet Easy to Use Connects Directly to Oscilloscopes with the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe Status/Diagnostic Information, and to Control Probe DC Offset


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    TAP1500 1W-19043-5 PDF

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


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    notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23 PDF

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


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    11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz PDF

    AWS01

    Abstract: aft-186
    Text: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer


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    fet ft 25 GHZ

    Abstract: No abstract text available
    Text: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description


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    AT001D4-31 AT001D4-31 fet ft 25 GHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic


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    38V2228 PDF

    fet ft 25 GHZ

    Abstract: fet ft 30 GHZ
    Text: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package


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    AS006M1-93 AS006M1-93 SN6337 3/99A fet ft 25 GHZ fet ft 30 GHZ PDF

    GRH111

    Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


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    MGFS52BN2122Ã MGFS52BN2122A 17GHz GF-49 14GHz GR708â GR40-1000 GRH111 GRH111-0 GRH111-27 GRH111-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description


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    AT001D3--1 MIL-STD-883 AT001D3-11 PDF

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


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    Q62702-L96 siemens gaas fet TMS 1600 marking S221 PDF

    JS8892-AS

    Abstract: k-band amplifier fet ft 30 GHZ
    Text: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GidB= 6*5 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM


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    JS8892-AS 23GHz T-153 JS8892-AS k-band amplifier fet ft 30 GHZ PDF

    AVANTEK transistor

    Abstract: ATF-13136-TR1
    Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB


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    0GQb54b ATF-13136 AVANTEK transistor ATF-13136-TR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib


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    ATF-13170 ATF-13170 PDF

    MWT1171HP

    Abstract: No abstract text available
    Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD


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    MwT-11 MwT-11 MWT1171HP PDF

    ATF-26100

    Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
    Text: ¥hn% ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET H E W LE T T ft "HÆ PACKARD Features • • • Chip Outline Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB


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    ATF-26100 AT-10600) ATF-26100 2-18 GHz Low Noise Gallium Arsenide FET PDF

    Untitled

    Abstract: No abstract text available
    Text: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


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    CFK2062-P3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


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    CFK2062-P3 CFK2062-P3 0000b74 PDF