AN569
Abstract: U425
Text: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
|
Original
|
PDF
|
MTH6N100E/D
O-218AC
AN569
U425
|
QT1012
Abstract: AN569 MTD1302 SMD310
Text: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD1302 HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N–Channel Enhancement Mode Silicon Gate
|
Original
|
PDF
|
MTD1302/D
MTD1302
QT1012
AN569
MTD1302
SMD310
|
PIN CPK
Abstract: AN569 MTB60N06HD SMD310 MTB60N06HD-D
Text: MOTOROLA Order this document by MTB60N06HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS RDS on = 0.014 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTB60N06HD/D
MTB60N06HD
MTB60N06HD/D*
PIN CPK
AN569
MTB60N06HD
SMD310
MTB60N06HD-D
|
NEC 426
Abstract: NES1417B-30
Text: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 41 7B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.4-1.7G H z
|
OCR Scan
|
PDF
|
NES1417B-30
NES1417B-30
NEC 426
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TMOS E-FET is designed to withstand high
|
OCR Scan
|
PDF
|
MTB29N15E/D
MTB29N15ED
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate
|
OCR Scan
|
PDF
|
MTD1302/D
TD1302
69A-13
|
MTA2N60E
Abstract: mtp3n6
Text: MOTOROLA SC XSTRS/R 4b E F D • b3b?5S4 00 =13203 4 ■ NOTb O rder this data sheet by M TA2N60E/D MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA D esigner’s Data Sheet MTA2N60E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand
|
OCR Scan
|
PDF
|
TA2N60E/D
MTA2N60E
221D-02
MTA2N60E
mtp3n6
|
MGFC36V7785A
Abstract: fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The
|
OCR Scan
|
PDF
|
FC36V7785A
MGFC36V7785A
45dBc
ltem-01
ltem-51
fet 30 f 124
|
bi 370 transistor e
Abstract: bi 370 transistor
Text: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E-FET High Density Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mQ T his advanced high cell d ensity HDTM OS pow er FET is
|
OCR Scan
|
PDF
|
MTP1302/D
bi 370 transistor e
bi 370 transistor
|
op072
Abstract: 9137 006 208 ea 7401 il 13366 MGFK38A 50GHZ MGFK38A3745 F1375
Text: , MITSUBISHI SEMICONDUCTOR cGaAs FET> MGFK38A3745 ^ 13.75 - 14.50G H z B A N D 6 W IN T E R N A L L Y M A T C H E D GaAS FET DESCRIPTION OUTLINE DRAWING The MGFK38A3745 is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 13.75 -14.50
|
OCR Scan
|
PDF
|
MGFK38A3745
50GHZ
MGFK38A3745
op072
9137 006 208
ea 7401
il 13366
MGFK38A
F1375
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D TM O S E-FET High Density Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mfl T h is a d v a n c e d h igh c e ll d e n s ity H D T M O S p o w e r FE T is
|
OCR Scan
|
PDF
|
MTP1302/D
|
4891 TRANSISTOR
Abstract: transistor MOSFET 924 ON 4892 mosfet p60n
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 60 N 06 H D HDTMOS E-FET ™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOSPOWER FET 60 AMPERES 60 VOLTS RDS on = 0014 OHM This advanced h ig h -c e ll density HDTMOS power FET is
|
OCR Scan
|
PDF
|
MTP60N06HD
4891 TRANSISTOR
transistor MOSFET 924 ON
4892 mosfet
p60n
|
MGF1403B
Abstract: ku 611
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1403B LOW NOISE GaAs FET DESCRIPTION T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku band a m p li fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ackage as
|
OCR Scan
|
PDF
|
MGF1403B
MGF1403B
12GHz
ku 611
|
DELTA 0431
Abstract: MGFC45V5867 PT 8A 3280
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING Unii:millimeters inches The MGFC45V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz
|
OCR Scan
|
PDF
|
MGFC45V5867
75GHz
MGFC45V5867
GF-38
25deg
DELTA 0431
PT 8A 3280
|
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z
|
OCR Scan
|
PDF
|
MGFC36V7785A
36V7785A
|
MGF1403B
Abstract: GSO 69 fet K 727
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E SC R IP T IO N T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku ban d a m p li fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ac k a g e as
|
OCR Scan
|
PDF
|
MGF1403B
MGF1403B
157MIN.
12GHz
GSO 69
fet K 727
|
3642G
Abstract: MGFC44V3642
Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2
|
OCR Scan
|
PDF
|
MGFC44V3642
MGFC44V3642
-42dBc
digita27
90GHz
25deg
Dec-98
3642G
|
MGFC42V5867
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package
|
OCR Scan
|
PDF
|
MGFC42V5867
75GHz
MGFC42V5867
GF-18
25deg
|
A2305
Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Text: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof
|
OCR Scan
|
PDF
|
2SK1969-01
SC-65
20Kil)
A2305
A2306
2SK1969-01
ZENNER A2
SC-65
2SK1969
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches
|
OCR Scan
|
PDF
|
F1903B
F1303B
12GHz
|
A2103
Abstract: 2SK 1110 2SK1017-01 SC-65 T151 A2 104 DIODE 3d
Text: 2SK1017-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings ¡Features 'High speed switching •Low on-resistance •No secondary breakdown 'Low driving power ' High voltage >VGSS —±30V Guarantee »Avalanche-proof
|
OCR Scan
|
PDF
|
2SK1017-01
SC-65
Tc-25Â
A2103
2SK 1110
2SK1017-01
SC-65
T151
A2 104
DIODE 3d
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
|
OCR Scan
|
PDF
|
NE85001
NE8500199
NE8500100
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
|
OCR Scan
|
PDF
|
NE85002
NE8500295
NE8500200
|
MGFC47A4450
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package
|
OCR Scan
|
PDF
|
MGFC47A4450
MGFC47A4450
47dBm
RG-10
|
