Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC42V5867 Search Results

    MGFC42V5867 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC42V5867 Mitsubishi 5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET Original PDF

    MGFC42V5867 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC42V5867

    Abstract: No abstract text available
    Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGFC42V5867 75GHz MGFC42V5867

    MGFC42V5867

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg