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    MGFC42V5867 Datasheets (1)

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    MGFC42V5867 Mitsubishi 5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET Original PDF

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    MGFC42V5867

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg PDF

    MGFC42V5867

    Abstract: No abstract text available
    Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		June/2004 MGFC42V5867 75GHz MGFC42V5867 PDF