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    FET D-PAK PACKAGE Search Results

    FET D-PAK PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    FET D-PAK PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    PHD*36n03lt

    Abstract: sot428 PHD36N03LT
    Text: PHD36N03LT TrenchMOS logic level FET Rev. 01 — 30 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD36N03LT in SOT428 D-PAK .


    Original     		PDF PHD36N03LT PHD36N03LT OT428 OT428, PHD*36n03lt sot428

    PHD95N03LT

    Abstract: No abstract text available
    Text: PHD95N03LT TrenchMOS logic level FET Rev. 02 — 8 February 2002 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .


    Original     		PDF PHD95N03LT M3D300 PHD95N03LT OT428 OT428, MBB076 MBK091

    PHD16N03T

    Abstract: No abstract text available
    Text: PHD16N03T TrenchMOS standard level FET Rev. 01 — 18 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 D-PAK .


    Original     		PDF PHD16N03T PHD16N03T OT428 OT428,

    Transistor SMD SOT363 SC70

    Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
    Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NIS5101 SMART HotPlugt IC/Inrush Limiter/Circuit Breaker The SMART HotPlug Integrated Circuit combines the control function and power FET into a single IC that saves design time and reduces the number of components required for a complete hot swap application. It is designed to allow safe insertion and removal of


    Original     		PDF NIS5101 NIS5101/D

    OM3N100ST

    Abstract: OM1N100SA OM1N100ST OM3N100SA OM5N100SA OM6N100SA
    Text: OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on


    Original     		PDF OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST MIL-19500, MAXIMU45 OM3N100ST OM1N100ST

    OMD100

    Abstract: OMD200 OMD400 OMD500
    Text: OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Available Screened To MIL-S-19500, TX, TXV and S Levels


    Original     		PDF OMD100 OMD400 OMD200 OMD500 MIL-S-19500, OMD100 OMD400 OMD500

    IRFZ14S

    Abstract: IRL2203 IRLML2803 SC1186 SC1186CSW
    Text: PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER PRELIMINARY - December 2, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1186 combines a synchronous voltage mode controller with two low-dropout linear regulators


    Original     		PDF SC1186 SC1186 140kHz, Si4410 MS-013AD B17104B ECN99-600 IRFZ14S IRL2203 IRLML2803 SC1186CSW

    1001 dl pwm

    Abstract: 2SC1188 SC1188 high side mosfet drive bst03
    Text: PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER SC1188 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com PRELIMINARY - January 25, 2000 DESCRIPTION FEATURES • Synchronous design, enables no heatsink solution • 95% efficiency switching section


    Original     		PDF SC1188 SC1188 200kHz, IRL34025 IRL2203 Si4410 1001 dl pwm 2SC1188 high side mosfet drive bst03

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information HDTMOS E-FET High Density Power FET D 2 p a k for Surface Mount TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB75N03HDL/D 418B-02

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon CBate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB8N50E/D

    transistor 8522

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB8N50E/D transistor 8522

    transistor motorola 246

    Abstract: TB60N06HD
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred D evice N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB60N06HD 0E-05 transistor motorola 246 TB60N06HD

    cr 406 transistor

    Abstract: AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0
    Text: MOTOROLA O rder this docum ent by M TB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET High Energy Power FET D2PAK for Surface Mount TM OS POWER FET 60 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB60N10E7L/D MTB60N10E7L/D cr 406 transistor AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0

    tb7104

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		PDF MTB71040L/D tb7104

    IRL541

    Abstract: IRLZ10 SSR3055L
    Text: MOSFETs FUNCTION GUIDE D-PAK/I-PAK N-CHANNEL LOGIC LEVEL FET BVdss (V) li>(on)(A) Ftos(on)(a) FWjc(K/W) PD(Watt) Page IRLR010 IRLR020 SO 6.70 14.00 0.300 0.150 5.00 3.00 25 42 817 826 IRLR014 SSR3055L IRLR024 «0 6.70 12.00 14.00 0.300 0.180 0.150 5.00 3.00


    OCR Scan     		PDF IRLR010 IRLR020 IRLR014 SSR3055L IRLR024 IRLR111 IRLR121 IRLR110 IRLR120 IRLR211 IRL541 IRLZ10

    c 4977 transistor

    Abstract: transistor on 4977 mosfet 452 JSs 97 diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip


    OCR Scan     		PDF MTV20N50E c 4977 transistor transistor on 4977 mosfet 452 JSs 97 diode

    2N3904

    Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E
    Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS


    OCR Scan     		PDF MTG4N100E/D MTG4N100E/D 2N3904 AN1040 AN569 DS3902 MTG4N100E MTH6N100E

    MTH13N50E

    Abstract: MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544
    Text: Order this data sheet by MTG9N50E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Full Pak Isolated TM OS E-FET High Energy Pow er M O SFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.4 OHM MAX 500 VOLTS This advanced high voltage TM O S E-FET is designed to w ith­


    OCR Scan     		PDF MTG9N50E/D MTG9N50E/D MTH13N50E MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544

    MTP50N05

    Abstract: l0134 CU904 CASE221D-02
    Text: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTA30N05EUD MTA30N05EL CU904 MTP50N05 l0134 CU904 CASE221D-02

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965