Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information HDTMOS E-FET High Density Power FET D 2 p a k for Surface Mount TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB75N03HDL/D
418B-02
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon CBate The D2 PAK package has the capability of housing a larger die
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MTB8N50E/D
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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transistor 8522
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB8N50E/D
transistor 8522
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transistor motorola 246
Abstract: TB60N06HD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred D evice N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB60N06HD
0E-05
transistor motorola 246
TB60N06HD
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 75 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB75N06HD/D
418B-02
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PDF
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cr 406 transistor
Abstract: AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0
Text: MOTOROLA O rder this docum ent by M TB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET High Energy Power FET D2PAK for Surface Mount TM OS POWER FET 60 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB60N10E7L/D
MTB60N10E7L/D
cr 406 transistor
AN569
MTB60N10E7L
cr2m
TMOS E-FET
PD242
s1vb0
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PDF
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tb7104
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die
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MTB71040L/D
tb7104
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PDF
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IRL541
Abstract: IRLZ10 SSR3055L
Text: MOSFETs FUNCTION GUIDE D-PAK/I-PAK N-CHANNEL LOGIC LEVEL FET BVdss (V) li>(on)(A) Ftos(on)(a) FWjc(K/W) PD(Watt) Page IRLR010 IRLR020 SO 6.70 14.00 0.300 0.150 5.00 3.00 25 42 817 826 IRLR014 SSR3055L IRLR024 «0 6.70 12.00 14.00 0.300 0.180 0.150 5.00 3.00
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IRLR010
IRLR020
IRLR014
SSR3055L
IRLR024
IRLR111
IRLR121
IRLR110
IRLR120
IRLR211
IRL541
IRLZ10
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c 4977 transistor
Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip
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MTV20N50E
c 4977 transistor
transistor on 4977
mosfet 452
JSs 97 diode
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PDF
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2N3904
Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E
Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS
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MTG4N100E/D
MTG4N100E/D
2N3904
AN1040
AN569
DS3902
MTG4N100E
MTH6N100E
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PDF
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PHD*36n03lt
Abstract: sot428 PHD36N03LT
Text: PHD36N03LT TrenchMOS logic level FET Rev. 01 — 30 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD36N03LT in SOT428 D-PAK .
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PHD36N03LT
PHD36N03LT
OT428
OT428,
PHD*36n03lt
sot428
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PHD95N03LT
Abstract: No abstract text available
Text: PHD95N03LT TrenchMOS logic level FET Rev. 02 — 8 February 2002 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .
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PHD95N03LT
M3D300
PHD95N03LT
OT428
OT428,
MBB076
MBK091
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PHD16N03T
Abstract: No abstract text available
Text: PHD16N03T TrenchMOS standard level FET Rev. 01 — 18 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 D-PAK .
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PHD16N03T
PHD16N03T
OT428
OT428,
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MTP50N05
Abstract: l0134 CU904 CASE221D-02
Text: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate
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MTA30N05EUD
MTA30N05EL
CU904
MTP50N05
l0134
CU904
CASE221D-02
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PDF
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
SSD2104
irfm014
SSP80N06
IRFU210A
IRFI530A
SSS7N60A
IRFU*230A
sss7n60a 951
SSP2N60A
IRF640A
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PDF
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transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295
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3SK228
3SK239A
3SK309
3SK186
3SK295
3SK194
BB101M
BB101C
3SK296
2SC2732
transistor C5080
transistor 2SC458
C5247
Transistor 2SA 2SB 2SC 2SD
transistor 2sc1515
2SC1755A
transistor f 20 nf
C5246
A1052
C4965
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PDF
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Transistor SMD SOT363 SC70
Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved
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Untitled
Abstract: No abstract text available
Text: NIS5101 SMART HotPlugt IC/Inrush Limiter/Circuit Breaker The SMART HotPlug Integrated Circuit combines the control function and power FET into a single IC that saves design time and reduces the number of components required for a complete hot swap application. It is designed to allow safe insertion and removal of
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NIS5101
NIS5101/D
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OM3N100ST
Abstract: OM1N100SA OM1N100ST OM3N100SA OM5N100SA OM6N100SA
Text: OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on
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OM1N100SA
OM5N100SA
OM1N100ST
OM3N100SA
OM6N100SA
OM3N100ST
MIL-19500,
MAXIMU45
OM3N100ST
OM1N100ST
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PDF
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OMD100
Abstract: OMD200 OMD400 OMD500
Text: OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Available Screened To MIL-S-19500, TX, TXV and S Levels
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OMD100
OMD400
OMD200
OMD500
MIL-S-19500,
OMD100
OMD400
OMD500
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PDF
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IRFZ14S
Abstract: IRL2203 IRLML2803 SC1186 SC1186CSW
Text: PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER PRELIMINARY - December 2, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1186 combines a synchronous voltage mode controller with two low-dropout linear regulators
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SC1186
SC1186
140kHz,
Si4410
MS-013AD
B17104B
ECN99-600
IRFZ14S
IRL2203
IRLML2803
SC1186CSW
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PDF
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1001 dl pwm
Abstract: 2SC1188 SC1188 high side mosfet drive bst03
Text: PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER SC1188 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com PRELIMINARY - January 25, 2000 DESCRIPTION FEATURES • Synchronous design, enables no heatsink solution • 95% efficiency switching section
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SC1188
SC1188
200kHz,
IRL34025
IRL2203
Si4410
1001 dl pwm
2SC1188
high side mosfet drive
bst03
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