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    MTG4N100E Search Results

    MTG4N100E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTG4N100E On Semiconductor Transistor Mosfet N-CH 1000V 4A 3(Case 340B-03) Scan PDF
    MTG4N100E On Semiconductor Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate Scan PDF

    MTG4N100E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3904

    Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E
    Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS


    OCR Scan     		PDF MTG4N100E/D MTG4N100E/D 2N3904 AN1040 AN569 DS3902 MTG4N100E MTH6N100E

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E