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    FET CASE IS CONNECTED TO Search Results

    FET CASE IS CONNECTED TO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    FET CASE IS CONNECTED TO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    one cell battery protection ic diagram

    Abstract: MM1301 Mitsumi capacitor MM1421 MM1491 FET and "charge voltage" over-charge "Lithium Ion battery"
    Text: MITSUMI Protection of Lithium Ion Battery one cell MM1491 Protection of Lithium Ion Battery (one cell) Monolithic IC MM1491 Outline This IC is a smaller, higher precision type of lithium ion battery protection IC as compared to the MM1301 series, and precision of ±25mV is guaranteed at 0°C ~ 50°C.


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    PDF MM1491 MM1301 MM1301 MM1491 OT-26A one cell battery protection ic diagram Mitsumi capacitor MM1421 FET and "charge voltage" over-charge "Lithium Ion battery"

    Untitled

    Abstract: No abstract text available
    Text: MITSUMI Protection of Lithium Ion Battery one cell MM1491 Protection of Lithium Ion Battery (one cell) Monolithic IC MM1491 Outline This IC is a smaller, higher precision type of lithium ion battery protection IC as compared to the MM1301 series, and precision of ±25mV is guaranteed at 0°C ~ 50°C.


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    PDF MM1491 MM1301 MM1301 MM1491 OT-26A

    of fet

    Abstract: MM1301 MM1421 MM1491 "Lithium Ion battery"
    Text: MITSUMI Lithium Ion Battery Protection for 1-cell in series MM1491 Lithium Ion Battery Protection (for 1-cell in series) Monolithic IC MM1491 Outline This IC is a smaller, higher precision type of lithium ion battery protection IC as compared to the MM1301


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    PDF MM1491 MM1301 MM1301 MM1491 OT-26A 35TSUMI of fet MM1421 "Lithium Ion battery"

    charging lithium ic

    Abstract: MM1301
    Text: MITSUMI Lithium Ion Battery Protection for 1-cell in series MM1491 Lithium Ion Battery Protection (for 1-cell in series) Monolithic IC MM1491 Outline This IC is a smaller, higher precision type of lithium ion battery protection IC as compared to the MM1301


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    PDF MM1491 MM1301 MM1491 charging lithium ic

    charging lithium ic

    Abstract: MM1301
    Text: MITSUMI Protection of Lithium Ion Battery one cell MM1491 Protection of Lithium Ion Battery (one cell) Monolithic IC MM1491 Outline This IC is a smaller, higher precision type of lithium ion battery protection IC as compared to the MM1301 series, and precision of ±25mV is guaranteed at 0°C ~ 50°C.


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    PDF MM1491 MM1301 MM1491 OT-26A charging lithium ic

    SA303

    Abstract: No abstract text available
    Text: SA303 SA303 P r o ddSA303 uu cc tt IInnnnoovvaatti ioonn FFr roomm 3 Phase Switching Amplifier FEATURES DESCRIPTION The SA303 is a fully integrated switching amplifier designed primarily to drive three-phase Brushless DC BLDC motors. Three independent half bridges


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    PDF dSA303 SA303 SA303 10ITNESS SA303U

    Untitled

    Abstract: No abstract text available
    Text: SA303 SA303 P r o ddSA303 uu cc tt IInnnnoovvaatti ioonn FFr roomm 3 Phase Switching Amplifier FEATURES DESCRIPTION The SA303 is a fully integrated switching amplifier designed primarily to drive three-phase Brushless DC BLDC motors. Three independent half bridges


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    PDF dSA303 SA303 SA303 10ITNESS SA303U

    Untitled

    Abstract: No abstract text available
    Text: SA303 SA303 P r o ddSA303 uu cc tt TI en cnhonvoaltoi go yn FF rr oo mm 3 Phase Switching Amplifier FEATURES DESCRIPTION The SA303 is a fully integrated switching amplifier designed primarily to drive three-phase Brushless DC BLDC motors. Three independent half bridges


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    PDF dSA303 SA303 SA303 SA303U

    e-bike

    Abstract: e-bike microcontroller Electric Bike microcontroller overcurrent circuit protection 72W ZENER DIODES circuit diagram for 80V automatic battery charger e bike motor controller e-bike motor controller i2c isolator ISL9208
    Text: Designing Multi-Cell Li-ion Battery Packs Using the ISL9216, ISL9217 Analog Front End Application Note August 31, 2007 AN1336.0 Description Battery Connection This application note discusses some of the hardware and software design decisions and shows how to select external


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    PDF ISL9216, ISL9217 AN1336 ISL9216 ISL9217. e-bike e-bike microcontroller Electric Bike microcontroller overcurrent circuit protection 72W ZENER DIODES circuit diagram for 80V automatic battery charger e bike motor controller e-bike motor controller i2c isolator ISL9208

    Electric Bike microcontroller

    Abstract: electric bike motor cell balancing e bike motor controller temperature controller using microcontroller circuit diagram for automatic voltage regulator AN1333 i2c isolator DIODE 20A for charger e-bike microcontroller
    Text: Designing Multi-Cell Li-ion Battery Packs Using the ISL9208 Analog Front End Application Note July 17, 2007 AN1333.0 Description Battery Connection This application note discusses some of the hardware and software design decisions and shows how to select external


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    PDF ISL9208 AN1333 P82B96 ISL9217 14-CELL Electric Bike microcontroller electric bike motor cell balancing e bike motor controller temperature controller using microcontroller circuit diagram for automatic voltage regulator i2c isolator DIODE 20A for charger e-bike microcontroller

    flowing AN8026

    Abstract: AN8026
    Text: Voltage Regulator AN8026 Self-excited RCC pseudo-resonance type AC-DC switching power supply control IC 2.4±0.25 • Overview ■ Features • Operating supply voltage range : Stop voltage 8.6 V typ. to 34 V • Output block employs the totem pole system


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    PDF AN8026 AN8026 AN1431/M flowing AN8026

    Untitled

    Abstract: No abstract text available
    Text: SA303 SA303 P r o ddSA303 uu cc tt TI en cnhonvoaltoi go yn FF rr oo mm 3 Phase Switching Amplifier FEATURES DESCRIPTION The SA303 is a fully integrated switching amplifier designed primarily to drive three-phase Brushless DC BLDC motors. Three independent half bridges


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    PDF dSA303 SA303 SA303 SA303U

    ic bldc 44-pin "single phase"

    Abstract: hsop Package 44pin
    Text: SA303 SA303 SA303 3 Phase Switching Amplifier FEATURES DESCRIPTION The SA303 is a fully integrated switching amplifier designed primarily to drive three-phase Brushless DC BLDC motors. Three independent half bridges provide over 10 amperes peak output current under


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    PDF SA303 SA303 SA303U SA303U ic bldc 44-pin "single phase" hsop Package 44pin

    SA306AHU

    Abstract: SA306AHR CONSTANT DC CURRENT POWER SUPPLY circuits hsop Package 44pin sa306a SA306U DIS1 diagram SA306AH
    Text: SA306A SA306A SA306A 3 Phase Switching Amplifier FEATURES ♦ Low cost 3 phase intelligent switching amplifier ♦ Directly connects to most embedded Microcontrollers and Digital Signal Controllers ♦ Integrated gate driver logic with dead-time generation and shoot-through prevention


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    PDF SA306A SA306A SA306U SA306U SA306AHU SA306AHR CONSTANT DC CURRENT POWER SUPPLY circuits hsop Package 44pin DIS1 diagram SA306AH

    SA53-IHZ

    Abstract: SA53
    Text: SA53 SA53 SA53 P r o dd uu cc tt IInnnnoovvaatti ioonn FFr roomm Switching Amplifier FEATURES ♦ Low Cost Intelligent Switching Amplifier ♦ Directly Connects to Most Embedded Microcontrollers and Digital Signal Controllers ♦ Integrated Gate Driver Logic with Dead-time


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    PDF SA53U SA53-IHZ SA53

    BFW61

    Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
    Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.


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    PDF BFW61 200/iA BFW61 FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357

    BFW61

    Abstract: No abstract text available
    Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA


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    PDF BFW61 btj53T31 357T2 BFW61

    transistor BD 263

    Abstract: No abstract text available
    Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in


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    PDF BFR29 003Sf bb53331 bb53T31 0035T03 transistor BD 263

    Untitled

    Abstract: No abstract text available
    Text: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.


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    PDF 2N3966 bb53T31 D03SfiSb 003SAS7

    FET BFW61

    Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
    Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.


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    PDF 7110fl2b BFW61 aTO-72 FET BFW61 BFW61 v511 304 fet transistor N CHANNEL FET BFW61

    BFR29

    Abstract: mosfet vn 10
    Text: 7110â2b DQb7b21 a?T • P H I N BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope w ith the substrate connected to the case. It is intended fo r linear applications in the audio as well as the i.f. and v.h.f. frequency region, and in


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    PDF DDb7b21 BFR29 BFR29 mosfet vn 10

    2n3966

    Abstract: transistor 2sk CRS15
    Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


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    PDF 2N3966 -T-3S-25' aTO-72 002b34fl T-35-25 2n3966 transistor 2sk CRS15

    BFR29

    Abstract: N-CHANNEL INSULATED GATE TYPE
    Text: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.


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    PDF BFR29 BFR29 N-CHANNEL INSULATED GATE TYPE

    2N3966

    Abstract: 219T
    Text: 2N 3966 J V _ N-CHANNEL SILICON FET S ym m etrica l n-channel, d e p le tio n ty p e , planar e p ita xia l ju n c tio n fie ld -e ffe ct tran sisto r in a T O -72 m etal envelope w ith th e shield lead connected to th e case. The tra n sisto r is suitable in a va rie ty o f


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    PDF 2N3966 003505b 2N3966 219T