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    Abstract: No abstract text available
    Text: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.


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    PDF 2N3966 bb53T31 D03SfiSb 003SAS7