LED interfacing with MSP430
Abstract: MSP-FETP430IF MSP430Fe4xx "Optical Couplers" Connector d-sub 25 pin msp430 motor MSP430Fxxx Optical Couplers SBOS032 311-1142-1-ND
Text: Application Report SLAA184 –October 2003 MSP430 Isolated FET Interface Andreas Dannenberg MSP430 ABSTRACT This application report describes how to build an isolated FET interface for the MSP430 Flash Emulation Tool FET . When developing and debugging line-powered MSP430
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SLAA184
MSP430
MSP430
ISO150
LED interfacing with MSP430
MSP-FETP430IF
MSP430Fe4xx
"Optical Couplers"
Connector d-sub 25 pin
msp430 motor
MSP430Fxxx
Optical Couplers
SBOS032
311-1142-1-ND
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Fujitsu GaAs FET application note
Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since
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MTT-28,
Fujitsu GaAs FET application note
FLL1500IU-2C
TC701
fujitsu GHz gaas fet
RG capacitor
uhf microwave fet
fujitsu power amplifier GHz
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
24-Hour
NE70083
NE372800
AN83901
NE71083
Matching Transformer - line matching transformed
AN-PF-1007
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
NE70083
planar transformer theory
small signal GaAs FET
x-band microwave fet
NE71083
DLI-1988-1
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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Untitled
Abstract: No abstract text available
Text: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85
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2SK1830
Abstract: HN7G02FU RN2110
Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
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HN7G02FU
RN2110
2SK1830
HN7G02FU
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DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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HN7G02FU
Abstract: 2SK1830 RN2110 2SK183
Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
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HN7G02FU
RN2110
2SK1830
HN7G02FU
2SK183
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2SK1830
Abstract: HN7G02FU RN2110
Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
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HN7G02FU
RN2110
2SK1830
HN7G02FU
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2SK1830
Abstract: HN7G02FU RN2110
Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent
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HN7G02FU
RN2110
2SK1830
HN7G02FU
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irf740 mosfet
Abstract: power MOSFET IRF740 driver circuit HIGH FREQUENCY Transformer ee 19 electronic power generator using transistor gate drive circuit for power MOSFET IRF740 EE 19 Switching Transformer AN3465 irf740 application note simple electronic transformer DIODE D5
Text: Maxim > App Notes > COMMUNICATIONS CIRCUITS Keywords: galvanic isolation, transformer-driver, power FET, power electronics Mar 14, 2005 APPLICATION NOTE 3465 Simple Power-FET Driver is Isolated and DCCoupled Abstract: An isolated transformer-driver IC MAX845 and small external transformer produce an isolated gatecontrol signal for a power FET.
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MAX845)
com/an3465
MAX845:
AN3465,
APP3465,
Appnote3465,
irf740 mosfet
power MOSFET IRF740 driver circuit
HIGH FREQUENCY Transformer ee 19
electronic power generator using transistor
gate drive circuit for power MOSFET IRF740
EE 19 Switching Transformer
AN3465
irf740 application note
simple electronic transformer
DIODE D5
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schematic adsl modem board
Abstract: generator voltage pwm schematic buck converter various PWM techniques EL7566 47 uf capacitor schematic circuit adsl modem board sepic converter 550khz AN1209 EL7532 ISL6410
Text: Intersil Integrated FET DC/DC Converters Application Note February 23, 2006 AN1209.0 Author: Alan Rich Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AN1209
schematic adsl modem board
generator voltage pwm schematic buck converter
various PWM techniques
EL7566
47 uf capacitor
schematic circuit adsl modem board
sepic converter 550khz
EL7532
ISL6410
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FDS6375
Abstract: CDRH104R-2R5 1N5819HW MIC2193 MIC2193BM NDS8425 Si4403DY Si4866DY R012F
Text: Application Hint 70 MIC2193 3.3V to 2.5V/5A with Ceramic Cout Application Circuit By Steven Chenetz General Description The MIC2193 is a 400kHz Synchronous Buck controller that uses a P-channel high-side FET. It has the advantage of running at 100% duty cycle high-side Fet
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MIC2193
400kHz
M9999-062506
FDS6375
CDRH104R-2R5
1N5819HW
MIC2193BM
NDS8425
Si4403DY
Si4866DY
R012F
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HD74LS08
Abstract: HAF2001 Hitachi DSA0073
Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down
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HAF2001
220AB
HD74LS08
HAF2001
Hitachi DSA0073
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Hitachi DSA002759
Abstract: No abstract text available
Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down
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HAF2001
220AB
220AB
Hitachi DSA002759
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Omron
Abstract: No abstract text available
Text: G3VM-354C/F MOS FET Relays Analog-switching MOS FET Relays with DPST-NC Contact. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples ■ Terminal Arrangement/Internal Connections • Communication equipment
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G3VM-354C/F
K250-E1-01
Omron
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G3VM-353B
Abstract: MOS FET Relays Omron
Text: G3VM-353B/E MOS FET Relays DIP 6-pin package, Analog-switching MOS FET Relays with SPST-NC Contact. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples ■ Terminal Arrangement/Internal Connections
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G3VM-353B/E
K249-E1-01
G3VM-353B
MOS FET Relays
Omron
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic DC bias of gaas FET
Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)
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application notes
Abstract: No abstract text available
Text: APPLICATION NOTES APPLICATION NOTES I. PACKAGED FETs and MODULES A. Handling Precautions B. Circuit Installation C. Package Markings II. FET CHIPS A. Removal of GaAs FET and HEMT Chips From Shipping Containers B. Circuit Installation C. Equivalent Circuit
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Untitled
Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series HITACHI ADE-208-353C 13th. Edition Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has
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HAF2001
ADE-208-353C
O-22QAB
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MACOM MMIC RF AMP
Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Text: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that
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SW-109)
SWD-119)
MACOM MMIC RF AMP
SW-338
SWD-109
SWD-119
DC bias of gaas FET
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