2SK2761
Abstract: mosfet 10a 600v 2SK2761-01MR
Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2761-01MR
2SK2761
mosfet 10a 600v
2SK2761-01MR
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2SK2761
Abstract: No abstract text available
Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2761-01MR
2SK2761
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2SK2761-01MR
Abstract: 2SK2761
Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2761-01MR
2SK2761-01MR
2SK2761
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0003 Rev.0.03 Nov 30, 2012 Features • Superjunction MOSFET Low on-resistance RDS on = 0.53 typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) High speed switching
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RJK60S2DPD
R07DS0741EJ0003
PRSS0004ZG-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
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RJK6012DPP-E0
R07DS0611EJ0100
PRSS0003AG-A
O-220FP)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
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RJK6012DPP-E0
R07DS0611EJ0100
PRSS0003AG-A
O-220FP)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.88 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
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RJL6012DPE
R07DS0814EJ0200
REJ03G1750-0100)
PRSS0004AE-B
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.88 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
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RJL6012DPE
R07DS0814EJ0200
REJ03G1750-0100)
PRSS0004AE-B
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PDF
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matters
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET Low on-resistance RDS on = 0.53 typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A
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RJK60S2DPD
R07DS0741EJ0002
PRSS0004ZG-A
matters
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Features • Superjunction MOSFET Low on-resistance RDS on = 0.53 typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) High speed switching
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RJK60S2DPP-E0
R07DS0742EJ0004
PRSS0003AG-A
O-220FP)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET Low on-resistance RDS on = 0.53 typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A
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RJK60S2DPP-E0
R07DS0742EJ0002
PRSS0003AG-A
O-220FP)
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400V, DC INVERTER
Abstract: No abstract text available
Text: Targetdatasheet flow PIM 0+P, 600V, 10A Version 0102 V23990-P370-_01-PM B: with PFC/ mit PFC D: w/o PFC/ ohne PFC Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage
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V23990-P370-
01-PM
D81359
400V, DC INVERTER
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Untitled
Abstract: No abstract text available
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
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035H
Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
035H
30ETH06
IRFP250
IRFPE30
Ice-100
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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94624B
IRGP50B60PD
O-247AC
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mos fet 120v 10A
Abstract: No abstract text available
Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3513-01L
mos fet 120v 10A
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IRGP50B60PDPBF
Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
IRGP50B60PDPBF
035H
30ETH06
IRFP250
IRFPE30
210uH
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PDF
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30ETH06
Abstract: IRFP250 IRGP50B60PD
Text: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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4624A
IRGP50B60PD
O-247AC
30ETH06
IRFP250
IRGP50B60PD
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PDF
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rdx*100n60
Abstract: RDX100N60 10A 600V MOS
Text: RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
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RDX100N60
O-220FM
rdx*100n60
RDX100N60
10A 600V MOS
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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OCR Scan
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2SK2761-01MR
Tc-25
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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OCR Scan
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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PDF
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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OCR Scan
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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fet 600V 20A
Abstract: mosfet 600V 20A SDF20N60 1d20a
Text: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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OCR Scan
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SDF20N60
MIL-S-19500
IF-20A
300hS.
fet 600V 20A
mosfet 600V 20A
1d20a
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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OCR Scan
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SDF20N60
SYM80L
IF-20A
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PDF
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