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    FERROXCUBE MATERIAL SPECIFICATION Search Results

    FERROXCUBE MATERIAL SPECIFICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D82C284-8 Rochester Electronics LLC 82C284 - Processor Specific Clock Generator, 16MHz, CMOS, CDIP18 Visit Rochester Electronics LLC Buy
    D82C284-12 Rochester Electronics LLC 82C284 - Processor Specific Clock Generator, 25MHz, CMOS, CDIP18 Visit Rochester Electronics LLC Buy
    TCM3105NL Rochester Electronics LLC TCM3105NL - FSK Modem, PDIP16 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC AM79865 -Physical Data Transmitter Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC AM79866A - Physical Data Receiver Visit Rochester Electronics LLC Buy

    FERROXCUBE MATERIAL SPECIFICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ferroxcube 3D3

    Abstract: EP13-3E27 coil former CSH-EP13-2S-10P EP13-3D3 ferroxcube sn 8400 3B46 CSH-EP13-1S-10P EP13 Coil
    Text: FERROXCUBE DATA SHEET EP13 EP cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube EP cores and accessories EP13 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE Σ I/A core factor (C1) 1.24 mm−1 Ve effective volume 472


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    MGC186 ferroxcube 3D3 EP13-3E27 coil former CSH-EP13-2S-10P EP13-3D3 ferroxcube sn 8400 3B46 CSH-EP13-1S-10P EP13 Coil PDF

    Ferroxcube core EC70

    Abstract: EC70 CORES EC70-3C8 EC70 3c90 6-32NC-2A EC70-3C90 3C81 3C90 EC70 EC70-3C81-E250
    Text: FERROXCUBE DATA SHEET EC70 EC cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube EC cores and accessories EC70 CORE SETS Effective core parameters SYMBOL handbook, halfpage PARAMETER VALUE 22.75 0.45 UNIT 34.5 0.15 Σ I/A core factor (C1)


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    MGC407 Ferroxcube core EC70 EC70 CORES EC70-3C8 EC70 3c90 6-32NC-2A EC70-3C90 3C81 3C90 EC70 EC70-3C81-E250 PDF

    transistor tt 2222

    Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
    Text: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.


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    T-37-IÃ BLF145 OT123 OT123 711002b MBB072 4-J11 9-j14 5-j15 transistor tt 2222 TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package PDF

    Philips 4312 020

    Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
    Text: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification


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    711002b BLT53 OT122 OT122D MCD200 MCD20 Philips 4312 020 ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar PDF

    plji

    Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
    Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control


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    BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777 PDF

    uc3807

    Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    BLF221 O-39/3) 004374D MSB009- MB8072' mu711Dfl2b MC9804 uc3807 BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322 PDF

    A367

    Abstract: BLV12 IEC134 SOT123
    Text: * Philips Sem iconductors ^ " b S E VHF power transistor OObSflm *^M5 M P H I N Product specification D — philips BLV12 international Q U IC K R EFER E N C E DATA RF performance at Tnfc = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for


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    7110fl5b BLV12 OT123 OT123 MRA370 MBA45I A367 BLV12 IEC134 SOT123 PDF

    34D SERIES CAPACITOR

    Abstract: BLY92 BLY92C Philips MBB .J275
    Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


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    D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275 PDF

    BGY145A

    Abstract: FX1115 vHF amplifier module NPN RF Amplifier
    Text: Preliminary specification Philips Sem iconductors VHF amplifier module BGY145A P IN N IN G - S O T 1 8 3 A D E S C R IP T IO N T h e m odule is a two-stage transistor am plifier and consists of two R F npn transistors m ounted on a ceram ic substrate, to gether with surface


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    BGY145A BGY145Ais OT183A 711032b OT183A. BGY145A FX1115 vHF amplifier module NPN RF Amplifier PDF

    MPA92

    Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
    Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability


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    TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package BH RV transistor International Power Sources P101 sot123 GZ22 PDF

    71009 SB

    Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
    Text: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an


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    BLV98CE OT-171 711002b 00b3QÃ 71009 SB transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series PDF

    philips resistor 2322-153

    Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
    Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


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    711002b BLV97CE OT171 philips resistor 2322-153 philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips PDF

    transistor tt 2222

    Abstract: 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll 443n 2222 032 nm 3915 class B push pull power amplifier
    Text: Philips Semiconductors Product specification VHF push-pull power MOS transistor_ l Z m 3 9 “ /S ' ShTl— PHILIPS INTERNATIONAL I 7110a2L, OOMBflMb SMt, ¿ P H I N PIN CONFIGURATION FEATURES • • • • BLF248 High power gain Easy power control


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    BLF248 OT262 711Dfl2b BLF248 transistor tt 2222 78L05 voltage regulator philips Trimmer 60 pf TT 2222 2222 031 capacitor philips capacitor philips ll 443n 2222 032 nm 3915 class B push pull power amplifier PDF

    pw 2222 a

    Abstract: PHILIPS 4312 amplifier 55.224 BLF346 VCB223
    Text: Philips Semiconductors Product specification VHF power MOS transistor PHILIPS BLF346 INTERNATIONAL FEATURES SbE ]> • 7HGfl2b 0Cm3flqLf ETT PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    BLF346 OT119 VCB223 VCB224- pw 2222 a PHILIPS 4312 amplifier 55.224 BLF346 VCB223 PDF

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


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    71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN PDF

    38478

    Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability


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    OT268 BLF546 00M40Q3 38478 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A PDF

    motorola mur850

    Abstract: motorola 1N4148 Siemens Ferrite n27 RM SPWM 555 pw 380v 04 x B64290-K45 ML4812CP B64290-K45-X830 R16 N30 1n5406 MOTOROLA ML4812 Application note
    Text: July 1992 PRELIMINARY % M icro Linear ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a "boost" type power factor correction system. Special care has been taken in the design of the ML4812 to increase


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    ML4812 ML4812 ML4812CP ML4812CQ ML4812IP ML4812IQ motorola mur850 motorola 1N4148 Siemens Ferrite n27 RM SPWM 555 pw 380v 04 x B64290-K45 B64290-K45-X830 R16 N30 1n5406 MOTOROLA ML4812 Application note PDF

    MRC106

    Abstract: LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057
    Text: Philips Semiconductors • 711D6gb 0 D b 3 m b ' PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain T7b M P H I N Product specification bSE D BLV945A QUICK REFERENCE DATA RF performance at Th = 25 °C In a common emitter class-AB push-pull test


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    BLV945A OT324 MRC107 MRC106 LI 20 AB c38 transistor MRC112 philips e3 BLV945A C360 ferroxcube 4322 TRANSISTOR bh 4322 057 PDF

    78L05

    Abstract: BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05
    Text: Product specification Philips Semiconductors BLF247B VHF push-pull power MOS transistor PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability 1 • Withstands full load mismatch. /~ l 2 X~l g• APPLICATIONS g 5 • Large signal applications in the


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    BLF247B OT262A1 MAM09B 7110aSb 78L05 BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05 PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N I f f ll * ! S D 1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . • . . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION P o u t = 70 W MIN. WITH 10 dB GAIN PIN CONNECTION 4 /\ 1 3 \/ n/ DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon


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    SD1446 PDF

    transistor tt 2222

    Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
    Text: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    BLF221B 7110fl5b 0DM37Mel 004375b transistor tt 2222 TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03 PDF

    c38 transistor

    Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
    Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


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    D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37 PDF

    ceramic capacitor 470 pf

    Abstract: philips carbon film resistor philips transistor sot122 MCB117
    Text: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12


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    BLU15/12 OT122 OT122A MCBT16 ceramic capacitor 470 pf philips carbon film resistor philips transistor sot122 MCB117 PDF

    D83-004

    Abstract: d83-004 diode d83-004k d83004 d83 004 D83 ZENER single phase SPWM IC MUR850 diode diode D83 004 SPWM sine
    Text: May 1997 ML4819 Power Factor and PWM Controller “Combo” GENERAL DESCRIPTION FEATURES The ML4819 is a complete boost mode Power factor Controller PFC which also contains a PWM controller. The PFC circuit is similar to the ML4812 while the PWM controller can be used for current or voltage mode control


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    ML4819 ML4819 ML4812 D83-004 d83-004 diode d83-004k d83004 d83 004 D83 ZENER single phase SPWM IC MUR850 diode diode D83 004 SPWM sine PDF