WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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RG121JU
WIMA TFM
Beckman 785-1
mkb3
wima TFM-.1UF-160V
bf197
diode zener ph c9v1
2N4286
2N3642
bf197p
transistor 2N2359A
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2N4427 equivalent
Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
2N4427 equivalent
ZT Ferranti
2N2369 equivalent
2N2708
BZX88-C4V3
diode BAW67
f025
ic marking z7
J 2N2369
marking G5
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2n3866 sos
Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500
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BFS96
BFS97
BFS98
-150t
BFS59-61
ZTX510
BSV33
2n3866 sos
2n4041
2N4127
2n3733
ZT180
ZT181
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2N3866 pin diagram
Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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ZT80-ZT180
100mA
Series-ZT180
ZT110-ZT280
CV7373)
CV7644)
CV7371)
CV7372)
ZT183.
ZT184
2N3866 pin diagram
CV7753
2N4429
BFS98
CV7644
ferranti
2N4041
ZT280
CV7371
CV7373
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BFS98
Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw ing •c mA ■ b mA min. max. -1 5 0 -1 5 0
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BFS96
BFS97
BFS98
-150t
BFS59-61
ZTX510
BSV33
BFS36
2N930
BFS37
2N2475
2N4127
ZT180
ZT181
ZT182
ZT183
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2N4041
Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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ZT80-ZT180
100mA
Series-ZT180
ZT110-ZT280
CV7373)
CV7644)
CV7371)
CV7372)
ZT183.
ZT184
2N4041
2N4429
BFS98
2N3632
2N4127
CV7644
J 2N2222A
CV7371
CV7373
ZT80
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2N1893
Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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2N3571
2N3572
2N2102
2N4036
2N1893
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
ZT92
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2N2220
Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18
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BFY51
2N2218
2N2904
2N2219
2N2905
2N2220
2N2221
2N2906
2N2222
2N2907
2N2219 transistor
2N2475
2N2904
2N2905
2N2906
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2N2708
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,
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2N3571
2N3572
2N2102
2N4036
2N2708
2N1893
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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2N2475
Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
2N2475
2N2907 equivalent
2N2369 equivalent
f025
ic marking z7
2N2369 FERRANTI
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2N2222
Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*
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BFY51
2N2218
2N2904
2N2219
2N2905
2N2220
2N2221
2N2906
2N2222
2N2907
2N2904
2N2219 transistor
2N2475
2N2905
2N2906
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BSS56
Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BSS56
f025
ic marking z7
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ferranti 2N2222A
Abstract: Ferranti ZT84 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 2N2894 ZT189
Text: NPN SWITCHING T A B LE 3 - NPN SILICO N PLAN AR MEDIUM AND HIGH SP EED SW ITCH IN G T R A N SIST O R S The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current
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2N3262
2N2907A
2N2907
2N2894
2N918
ferranti 2N2222A
Ferranti ZT84
2N2102
2N4036
BCY65E
BCY77
BFX84
ZT189
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2N1893
Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Text: NPN LOW LEVEL T A B L E 1 - N P N S IL IC O N P L A N A R L O W L E V E L T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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2N3866
2N4427
2N2102
2N4036
2N1893
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
ZT92
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
BC328A
BC328B
BC328C
BC338C
2N1893
2N2102
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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2N2477
Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium
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FF3725J
FF2221E
FF2221J
2N2221
FF2222E
FF2222J
2N2222
FF2483E
FF2483J
2N2907A
2N2477
2N2222
2N2219 transistor
2N2938
2N2483
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2N2102
Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
Text: NPN SWITCHING T A B L E 3 - N P N S IL IC O N P L A N A R M E D IU M A N D H IG H S P E E D S W IT C H IN G T R A N S IS T O R S The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2N3262
2N2907A
2N2907
2N2894
2N918
2N2102
2N4036
BCY65E
BCY77
BFX84
BFX85
ZT189
ZT86
ZT88
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BC140 equivalent
Abstract: 2N4427 equivalent 2n4036 equivalent 2N2270 equivalent 2N3866 equivalent 2N929 2N930 BAW63 BAW63A BFS36
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BC140 equivalent
2N4427 equivalent
2n4036 equivalent
2N2270 equivalent
2N3866 equivalent
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BC239C equivalent
Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BC239C equivalent
BC550C equivalent
bc237a equivalent
bc238b equivalent
BC548C equivalent
bc238a equivalent
bc108b equivalent
bc549c equivalent
bc183 equivalent
BC237B equivalent
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bc140
Abstract: ZT Ferranti 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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2N3866
2N4427
2N2102
2N4036
bc140
ZT Ferranti
2N1893
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
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2N4036
Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details
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2N918
2N2708
BUY92
BUY91
BUY90
2N4036
2N4037
TP-39
TRANSISTOR BC140
transistor 2N2219
ZT Ferranti
2N2102
2N2405
2N3866
2N4427
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BC238B
Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple ment = 25°C lc !c mW mA MHz mA 150 100
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
BC238B
BC547B
bcy58
ZT Ferranti
2N1131
2N1132
2N4037
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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