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    FE3D Search Results

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    FE3D Price and Stock

    Diotec Semiconductor AG FE3D

    DIODE GEN PURP 200V 3A DO201
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    DigiKey FE3D Bulk 1,700
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    Mouser Electronics FE3D
    • 1 $0.49
    • 10 $0.382
    • 100 $0.229
    • 1000 $0.221
    • 10000 $0.137
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    Onlinecomponents.com FE3D
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    • 10000 $0.1182
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    Vishay Semiconductors EGP51F-E3/D

    DIODE GEN PURP 300V 5A DO201AD
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    DigiKey EGP51F-E3/D Ammo Pack
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    Vishay Intertechnologies EGP51F-E3/D

    5A,300V,50NS,SUPERT,NOT FOR NEW DESIGN - Tape and Reel (Alt: EGP51F-E3/D)
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    Avnet Americas EGP51F-E3/D Reel 8 Weeks 4,000
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    Mouser Electronics EGP51F-E3/D
    • 1 $0.9
    • 10 $0.737
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    Newark EGP51F-E3/D Bulk 4,000
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    Vishay Intertechnologies EGP31F-E3/D

    3A,300V,50NS,SUPERT,NOT FOR NEW DESIGN - Tape and Reel (Alt: EGP31F-E3/D)
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    Avnet Americas EGP31F-E3/D Reel 8 Weeks 4,000
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    Mouser Electronics EGP31F-E3/D
    • 1 $0.9
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    • 1000 $0.357
    • 10000 $0.357
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    Newark EGP31F-E3/D Bulk 4,000
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    Vishay Intertechnologies EGP51F-E3/C

    Rectifiers 5A,300V,50NS
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    Mouser Electronics EGP51F-E3/C
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    TTI EGP51F-E3/C Reel 4,200
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    FE3D Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FE3D Diotec Super Fast Silicon Rectifier Original PDF
    FE3D Diotec Super fast silicon rectifier Original PDF
    FE3D EIC Semiconductor Super Fast Rectifier Diodes Original PDF
    FE3D General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    FE3D Semikron Diode: 3A: 200V: Super Fast Silicon Diode Original PDF
    FE3D Vishay DIODE ULTRA FAST RECOVERY RECTIFIER 200V 3A 2G-4 Original PDF
    FE3D Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    FE3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FE3A

    Abstract: No abstract text available
    Text: FE3A thru FE3D Glass Passivated Ultrafast Rectifier Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d teFeatures n te a P ♦ High temperature metallurgically bonded construction ♦ Cavity-free glass passivated junction ♦ Superfast recovery time for high efficiency


    Original
    PDF MIL-S-19500 NUMBER10 50mVp-p FE3A

    FE3A

    Abstract: FE3C
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 3.0 Amperes * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency


    Original
    PDF MIL-S-19500 50mVp-p FE3A FE3C

    FE3A

    Abstract: fe3d
    Text: FE3A to FE3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability


    Original
    PDF MIL-STD-750, D-74025 28-Jan-03 FE3A fe3d

    FE3A

    Abstract: No abstract text available
    Text: FE3A thru FE3D Glass Passivated Ultrafast Rectifier * d e t n e t a P Features Case Style G4 • • • • • 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. • • • • 0.300 (7.6) MAX. 0.042 (1.07) High temperature metallurgically bonded construction


    Original
    PDF MIL-S-19500 50mVp-p FE3A

    FE3A

    Abstract: FE3C
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 3.0 Amperes * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency


    Original
    PDF MIL-S-19500 50mVp-p FE3A FE3C

    FE3A

    Abstract: FE3C
    Text: FE3A thru FE3D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)


    Original
    PDF MIL-S-19500 50mVp-p 20-Mar-02 FE3A FE3C

    FE3A

    Abstract: No abstract text available
    Text: FE3A thru FE3D Glass Passivated Ultrafast Rectifier * d e t n e t a P Features Case Style G4 • • • • • 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. • • • • 0.300 (7.6) MAX. 0.042 (1.07) High temperature metallurgically bonded construction


    Original
    PDF MIL-S-19500 50mVp-p FE3A

    FE3A

    Abstract: No abstract text available
    Text: TH97/10561QM FE3A ~ FE3D IATF 0060636 SGS TH07/1033 GLASS PASSIVATED JUNCTION SUPER FAST RECTIFIERS DO-201AD PRV : 50 - 200 Volts Io : 3.0 Amperes FEATURES : * * * * * * * TW00/17276EM 1.00 25.4 MIN. 0.21 (5.33) 0.19 (4.82) Glass passivated junction chip


    Original
    PDF TH97/10561QM TH07/1033 DO-201AD TW00/17276EM DO-201AD UL94V-O MIL-STD-202, FE3A

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    8-bit microcontroller 8 pin package

    Abstract: ir sensor 0038 TA 7609 0004H F082A
    Text: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F082A Series Product Specification PS022824-0508 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE


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    PDF F082A PS022824-0508 F082A 8-bit microcontroller 8 pin package ir sensor 0038 TA 7609 0004H

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


    Original
    PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z

    12v to 230v inverters circuit diagrams

    Abstract: 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note
    Text: Application Note 9017 June, 2001 Manufacturing Technology of a Small Capacity Inverter Using a Fairchild IGBT by Kee Ju Um, Yeong Joo Kim CONTENTS 1. 2. How to choose gate resistance .2


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    PDF SGP5N60RUFD 12v to 230v inverters circuit diagrams 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    Untitled

    Abstract: No abstract text available
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ G4 ♦ ♦ ♦ ♦ 1.0 MIN. 25.4 .180 (4,6) .115(2.9) <3 ♦ .300(7.6) MAX. .042 (1.07), .038 (.962) 1.0 MIN. (25.4) Glass passivated cavity-free junction


    OCR Scan
    PDF MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3 .0 Amperes FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ & 1.0 25.4 MIN. 0.180 (4 .6) 0. 1 15 (2 .9) DIA. ♦ ♦ ♦ ♦ 0.300 ( 7.6) MAX. A High temperature metallurgically bonded construction


    OCR Scan
    PDF MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -3.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 0.300 {7.6 MAX. High temperature metallurgical^ bonded construction Glass passivated cavity-free junction


    OCR Scan
    PDF MIL-S-19500 MIL-STD-750,

    FE3A

    Abstract: No abstract text available
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ ».0 2 5 4 MIN 0 .115 (2 9) DIA ♦ ♦ ♦ ♦ A n . 0.300 (7 6 ) MAX VLJ High temperature metallurgically bonded construction


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    PDF MIL-S-19500 FE3A

    Untitled

    Abstract: No abstract text available
    Text: FE3A THRU FE3D GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ G4 ♦ ♦ ♦ ♦ 1.0 MIN. 25.4 .180 ( 4 . 6 ) .115 ( 2 . 9 ) ♦ .3 0 0 (7 .6 ) MAX. .042 ( 1 . 0 7 ) .038 (. 9 G 2 ) Glass passivated cavity-free junction


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    PDF MIL-S-19500

    8YV27-200

    Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
    Text: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50


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    PDF VR-50 VR-100 VR-150 VR-300 VR-500 VR-600 VR-1000 GI1001 GI1004 8YV27-200 VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B