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    FDPF12N50 Price and Stock

    Rochester Electronics LLC FDPF12N50FT

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FDPF12N50FT Bulk 24,145 286
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    onsemi FDPF12N50NZ

    MOSFET N-CH 500V 11.5A TO220F
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    DigiKey FDPF12N50NZ Tube 1,077 1
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    Arrow Electronics FDPF12N50NZ 350 1
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    Rochester Electronics FDPF12N50NZ 1,980 1
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    Rochester Electronics LLC FDPF12N50NZ

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FDPF12N50NZ Bulk 1,000 306
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    onsemi FDPF12N50T

    MOSFET N-CH 500V 11.5A TO220F
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    DigiKey FDPF12N50T Tube 907 1
    • 1 $3.44
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    Arrow Electronics FDPF12N50T 1,000 1
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    FDPF12N50T 760 99 Weeks 1
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    Newark FDPF12N50T Bulk 1,000
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    Rochester Electronics FDPF12N50T 170,000 1
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    TME FDPF12N50T 240 1
    • 1 $1.93
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    onsemi FDPF12N50UT

    MOSFET N-CH 500V 10A TO220F
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    DigiKey FDPF12N50UT Tube
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    Find more FDPF12N50 price and stock on Findchips.com

    FDPF12N50 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF12N50 Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.65 Ohm Original PDF
    FDPF12N50FT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF
    FDPF12N50FT Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.7 Ohm Original PDF
    FDPF12N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220FP Original PDF
    FDPF12N50NZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF
    FDPF12N50T Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FDPF12N50UT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220F-3 Original PDF

    FDPF12N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDPF12N50T

    Abstract: FDP12N50
    Text: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50 FDPF12N50T FDPF12N50T

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50F FDPF12N50F

    FDPF*12n50ut

    Abstract: FDPF12N50UT
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut

    Untitled

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ tm N-Channel MOSFET 500V, 11.5A, 0.52 Features Description • RDS on = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N- Channel enhancement mode power field ef fect transistors are pr oduced using Fa irchild’s pr oprietary, planar


    Original     		PDF FDP12N50NZ FDPF12N50NZ FDPF12N50NZ

    fdp12n50nz

    Abstract: fdpf12n50nz
    Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP12N50NZ FDPF12N50NZ FDPF12N50NZ

    FDPF*12n50ut

    Abstract: FDPF12N50UT ULTRA FAST diode 400v 5a
    Text: FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF12N50UT FDPF12N50UT 50nsec 200nsec FDPF*12n50ut ULTRA FAST diode 400v 5a

    Untitled

    Abstract: No abstract text available
    Text: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF12N50FT FDPF12N50FT 100nsec 200nsec

    FDPF12N50NZ

    Abstract: FDP12N50NZ
    Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50NZ FDPF12N50NZ FDPF12N50NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50 FDPF12N50T

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A • Low gate charge ( Typ. 23nC ) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50NZ FDPF12N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP12N50NZ FDPF12N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 mΩ Features Description • RDS on = 590 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF12N50FT 100nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features Description • RDS on = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP12N50 FDPF12N50T

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT

    FDPF*12n50ut

    Abstract: FDPF12N50UT FDP12N50U FDP12N50
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut FDP12N50

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50F FDPF12N50F

    FDPF12N50FT

    Abstract: FDP12N50F FDP12N50
    Text: UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT FDP12N50

    FDPF*12n50ut

    Abstract: fdpf12n50ut mosfet 10a 500v FDP12N50U
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut mosfet 10a 500v

    FDP12N50

    Abstract: FDPF12N50
    Text: UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50 FDPF12N50 FDPF12N50

    FDPF12N50T

    Abstract: mosfet driver 400v
    Text: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features Description • RDS on = 550 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP12N50 FDPF12N50T FDPF12N50T mosfet driver 400v

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original     		PDF ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884