Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process
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FDMC86106LZ
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Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process
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Original
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FDMC86106LZ
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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Original
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FDMC86106LZ
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PDF
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FDMC86106LZ
Abstract: FDMC86106Z
Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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Original
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FDMC86106LZ
FDMC86106LZ
FDMC86106Z
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PDF
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