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    FDMC86106LZ Price and Stock

    onsemi FDMC86106LZ-L701

    FET 100V 103.0 MOHM MLP33
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    DigiKey FDMC86106LZ-L701 Reel
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    Avnet Americas FDMC86106LZ-L701 Reel 3,000
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    onsemi FDMC86106LZ

    Trans MOSFET N-CH 100V 3.3A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86106LZ)
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    Avnet Americas FDMC86106LZ Reel 4 Weeks 697
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    FDMC86106LZ Reel 11 Weeks 3,000
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    Rochester Electronics FDMC86106LZ 1,779 1
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    Avnet Asia FDMC86106LZ 11 Weeks 3,000
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    EBV Elektronik FDMC86106LZ 12 Weeks 3,000
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    onsemi FDMC86106LZ-P

    FDMC86106LZ - FET 100V 103.0 MOHM MLP33
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    Rochester Electronics FDMC86106LZ-P 24,000 1
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    • 100 $0.5483
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    Fairchild Semiconductor Corporation FDMC86106LZ

    MOSFET N-CH 100V 3.3A POWER33 '
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    Rochester Electronics FDMC86106LZ 3 1
    • 1 $0.5233
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    • 100 $0.4919
    • 1000 $0.4448
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    FDMC86106LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86106LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.3A POWER33 Original PDF

    FDMC86106LZ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		PDF FDMC86106LZ

    Untitled

    Abstract: No abstract text available
    Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		PDF FDMC86106LZ

    Untitled

    Abstract: No abstract text available
    Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDMC86106LZ

    FDMC86106LZ

    Abstract: FDMC86106Z
    Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDMC86106LZ FDMC86106LZ FDMC86106Z