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    Untitled

    Abstract: No abstract text available
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


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    FD8305N FDR8305N PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR8305N FDR835N
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original
    FDR8305N CBVK741B019 F63TNR F852 FDR8305N FDR835N PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


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    FDR8305N FD8305N FD8305N PDF

    FDR8305N

    Abstract: N-Channel 2.5V
    Text: =Ml C O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan
    FD8305N FDR8305N N-Channel 2.5V PDF